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Jie Zhou
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年份
Battery-free, tuning circuit–inspired wireless sensor systems for detection of multiple biomarkers in bodily fluids
TL Liu, Y Dong, S Chen, J Zhou, Z Ma, J Li
Science Advances 8 (27), eabo7049, 2022
242022
Microscale local strain gauges based on visible micro-disk lasers embedded in a flexible substrate
T Zhou, J Zhou, Y Cui, X Liu, J Li, K He, X Fang, Z Zhang
Optics Express 26 (13), 16797-16804, 2018
142018
Interfacial band parameters of ultrathin ALD–Al2O3, ALD–HfO2, and PEALD–AlN/ALD–Al2O3 on c-plane, Ga-face GaN through XPS measurements
J Gong, Z Zheng, D Vincent, J Zhou, J Kim, D Kim, TK Ng, BS Ooi, ...
Journal of Applied Physics 132 (13), 2022
122022
Influences of ALD Al2O3 on the surface band-bending of c-plane, Ga-face GaN
J Gong, K Lu, J Kim, TK Ng, D Kim, J Zhou, D Liu, J Kim, BS Ooi, Z Ma
Japanese Journal of Applied Physics 61 (1), 011003, 2021
112021
Synthesis and Characteristics of Transferrable Single‐Crystalline AlN Nanomembranes
J Gong, J Zhou, P Wang, TH Kim, K Lu, S Min, R Singh, M Sheikhi, ...
Advanced Electronic Materials 9 (5), 2201309, 2023
92023
Proposal and numerical study of a flexible visible photonic crystal defect cavity for nanoscale strain sensors
J Zhou, T Zhou, J Li, K He, Z Qiu, B Qiu, Z Zhang
Optics Express 25 (20), 23645-23653, 2017
82017
0.86 kV p-Si/(001)-Ga2O3 heterojunction diode
S Xie, MT Alam, J Gong, Q Lin, M Sheikhi, J Zhou, F Alema, A Osinsky, ...
IEEE Electron Device Letters, 2024
52024
Initial demonstration of AlGaAs-GaAsP-beta-Ga2O3 npn double heterojunctions
J Zhou, A Dheenan, J Gong, C Adamo, P Marshall, M Sheikhi, TH Tsai, ...
arXiv preprint arXiv:2308.06575, 2023
52023
Monocrystalline Si/-GaO p-n heterojunction diodes fabricated via grafting
J Gong, D Kim, H Jang, F Alema, Q Wang, TK Ng, S Qiu, J Zhou, X Su, ...
arXiv preprint arXiv:2305.19138, 2023
52023
Band alignment of grafted monocrystalline Si (0 0 1)/β-Ga2O3 (0 1 0) pn heterojunction determined by X-ray photoelectron spectroscopy
J Gong, J Zhou, A Dheenan, M Sheikhi, F Alema, TK Ng, SS Pasayat, ...
Applied Surface Science 655, 159615, 2024
42024
Interfacial band parameters of ultrathin ALD-ZrO2 on Ga-polar GaN through XPS measurements
S Qiu, J Gong, J Zhou, TK Ng, R Singh, M Sheikhi, BS Ooi, Z Ma
AIP Advances 13 (5), 2023
42023
p-GaAs/n-Ga2O3 heterojunction diode with breakdown voltage of∼ 800 V
S Xie, M Sheikhi, S Xu, MT Alam, J Zhou, L Mawst, Z Ma, C Gupta
Applied Physics Letters 124 (7), 2024
32024
Synthesis and characteristics of a monocrystalline GaAs/β-Ga2O3 pn heterojunction
J Zhou, J Gong, M Sheikhi, A Dheenan, Q Wang, H Abbasi, Y Liu, ...
Applied Surface Science 663, 160176, 2024
22024
Low contact-resistivity and high-uniformity Ni/Au ohmic contacts on Si nanomembranes grafted to Si substrates via low-temperature rapid thermal annealing
J Kim, J Gong, W Lin, S Lal, X Su, D Vincent, SJ Cho, J Zhou, S Min, ...
Materials Science in Semiconductor Processing 151, 106988, 2022
22022
Influences of ALD Al2O3 on the surface band-bending of c-plane, Ga-face GaN and the implication to GaN-collector npn heterojunction bipolar transistors
J Gong, J Kim, TK Ng, K Lu, D Kim, J Zhou, D Liu, J Kim, BS Ooi, Z Ma
arXiv, 2021
22021
Two-dimensional fivefold photonic crystal microcavity
T Zhou, J Li, J Zhou, K He, Z Qiu, B Qiu, Z Zhang
Journal of Nanophotonics 11 (4), 046013-046013, 2017
22017
Demonstration of a monocrystalline GaAs--GaO p-n heterojunction
J Zhou, M Sheikhi, A Dheenan, H Abbasi, J Gong, Y Liu, C Adamo, ...
arXiv preprint arXiv:2310.03886, 2023
12023
Characteristics of native oxides-interfaced GaAs/Ge np diodes
J Zhou, J Gong, S Lal, J Kim, W Lin, C Chen, C Li, Y Lu, S Qiu, Y Dong, ...
IEEE Electron Device Letters, 2024
2024
Characteristics of grafted monocrystalline Si/β-Ga2O3p–n heterojunction
J Gong, D Kim, H Jang, F Alema, Q Wang, J Zhou, Y Li, TK Ng, S Qiu, ...
Applied Physics Letters 124 (26), 2024
2024
Structural and Electrical Properties of Grafted Si/GaAsSb Heterojunction
HN Abbasi, SLH Jung, N Gajowski, Y Lu, L Wang, D Kim, J Zhou, J Gong, ...
arXiv preprint arXiv:2406.14433, 2024
2024
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