| Improved Outcoupling Efficiency and Stability of Perovskite Light‐Emitting Diodes using Thin Emitting Layers L Zhao, KM Lee, K Roh, SUZ Khan, BP Rand Advanced Materials 31 (2), 1805836, 2019 | 251 | 2019 |
| Polariton Transitions in Femtosecond Transient Absorption Studies of Ultrastrong Light–Molecule Coupling CA DelPo, B Kudisch, KH Park, SUZ Khan, F Fassioli, D Fausti, BP Rand, ... The Journal of Physical Chemistry Letters 11 (7), 2667-2674, 2020 | 82 | 2020 |
| Reduced Recombination and Capacitor-like Charge Buildup in an Organic Heterojunction KN Schwarz, PB Geraghty, VD Mitchell, SUZ Khan, OJ Sandberg, ... Journal of the American Chemical Society 142 (5), 2562-2571, 2020 | 38 | 2020 |
| Polariton Decay in Donor–Acceptor Cavity Systems CA DelPo, SUZ Khan, KH Park, B Kudisch, BP Rand, GD Scholes The Journal of Physical Chemistry Letters 12 (40), 9774-9782, 2021 | 36 | 2021 |
| Hot-casting assisted liquid additive engineering for efficient and stable perovskite solar cells H Min, J Hu, Z Xu, T Liu, SUZ Khan, K Roh, YL Loo, B Rand | 30 | 2022 |
| Multiple Charge Transfer States in Donor–Acceptor Heterojunctions with Large Frontier Orbital Energy Offsets SUZ Khan, G Londi, X Liu, MA Fusella, G D’Avino, L Muccioli, ... Chemistry of Materials 31 (17), 6808-6817, 2019 | 23 | 2019 |
| A physically based compact I–V model for monolayer TMDC channel MOSFET and DMFET biosensor E Rahman, A Shadman, I Ahmed, SUZ Khan, QDM Khosru Nanotechnology 29 (23), 235203, 2018 | 20 | 2018 |
| Impact of high‐κ gate dielectric and other physical parameters on the electrostatics and threshold voltage of long channel gate‐all‐around nanowire transistor SUZ Khan, M Hossain, FU Rahman, R Zaman, M Hossen, QDM Khosru International Journal of Numerical Modelling: Electronic Networks, Devices …, 2015 | 19 | 2015 |
| Quantifying the effect of energetic disorder on organic solar cell energy loss SUZ Khan, J Bertrandie, M Gui, A Sharma, W Alsufyani, JF Gorenflot, ... Joule 6 (12), 2821-2834, 2022 | 15 | 2022 |
| Fate of Low-Lying Charge-Transfer Excited States in a Donor: Acceptor Blend with a Large Energy Offset G Londi, SUZ Khan, L Muccioli, G D’Avino, BP Rand, D Beljonne The Journal of Physical Chemistry Letters 11 (23), 10219-10226, 2020 | 13 | 2020 |
| Influence of Disorder and State Filling on Charge-Transfer-State Absorption and Emission Spectra SUZ Khan, BP Rand Physical Review Applied 16 (4), 044026, 2021 | 11 | 2021 |
| Analytical modeling of gate capacitance and drain current of gate-all-around InxGa1−xAs nanowire MOSFET SUZ Khan, MS Hossain, MO Hossen, FU Rahman, R Zaman, ... 2014 2nd International Conference on Electronic Design (ICED), 89-93, 2014 | 11 | 2014 |
| Quantum mechanical electrostatics and transport simulation and performance evaluation of short channel monolayer WSe2 field effect transistor SUZ Khan, QDM Khosru ECS Transactions 66 (14), 11, 2015 | 10 | 2015 |
| Nonradiative Recombination via Charge-Transfer-Exciton to Polaron Energy Transfer Limits Photocurrent in Organic Solar Cells SUZ Khan, M Gui, X Liu, NC Giebink, A Kahn, BP Rand Advanced Energy Materials, 2200551, 2022 | 8 | 2022 |
| Capacitance-Voltage Characteristics of Gate-All-Around InxGa1-XAs Nanowire Transistor QDM Khosru, SUZ Khan, MS Hossain, FU Rahman, MO Hossen, ... ECS Transactions 53 (1), 169, 2013 | 7 | 2013 |
| Smart box: A TV remote controller based programmable home appliance manager SUZ Khan, TH Shovon, J Shawon, AS Zaman, S Sabyasachi 2013 International Conference on Informatics, Electronics and Vision (ICIEV …, 2013 | 6 | 2013 |
| Morphological Requirements for Nanoscale Electric Field Buildup in a Bulk Heterojunction Solar Cell KN Schwarz, VD Mitchell, SUZ Khan, C Lee, A Reinhold, TA Smith, ... The Journal of Physical Chemistry Letters 12 (1), 537-545, 2020 | 5 | 2020 |
| Uncoupled mode space approach towards transport modeling of Gate-All-Around InxGa1−xAs nanowire MOSFET SUZ Khan, MS Hossain, FU Rahman, R Zaman, MO Hossen, ... 8th International Conference on Electrical and Computer Engineering, 100-103, 2014 | 5 | 2014 |
| Self-consistent determination of threshold voltage of In-rich Gate-All-Around InxGa1−xAs nanowire transistor incorporating quantum mechanical effect R Zaman, SUZ Khan, MS Hossain, FU Rahman, MO Hossen, ... 2012 7th International Conference on Electrical and Computer Engineering …, 2012 | 4 | 2012 |
| Characterization of interface trap density of In-rich InGaAs Gate-all-around nanowire MOSFETs FU Rahman, MS Hossain, SUZ Khan, R Zaman, MO Hossen, ... 2012 7th International Conference on Electrical and Computer Engineering …, 2012 | 4 | 2012 |
Barry P. RandElectrical and Computer Engineering & Andlinger Center for Energy and the Environment, Princeton在 princeton.edu 的电子邮件经过验证
