| Highly repeatable room temperature negative differential resistance in AlN/GaN resonant tunneling diodes grown by molecular beam epitaxy TA Growden, DF Storm, W Zhang, ER Brown, DJ Meyer, P Fakhimi, ... Applied Physics Letters 109 (8), 2016 | 64 | 2016 |
| Near-UV electroluminescence in unipolar-doped, bipolar-tunneling GaN/AlN heterostructures TA Growden, W Zhang, ER Brown, DF Storm, DJ Meyer, PR Berger Light: Science & Applications 7 (2), 17150-17150, 2018 | 58 | 2018 |
| 431 kA/cm2 peak tunneling current density in GaN/AlN resonant tunneling diodes TA Growden, W Zhang, ER Brown, DF Storm, K Hansen, P Fakhimi, ... Applied physics letters 112 (3), 2018 | 50 | 2018 |
| Selective deuteron production using target normal sheath acceleration JT Morrison, M Storm, E Chowdhury, KU Akli, S Feldman, C Willis, ... Physics of Plasmas 19 (3), 2012 | 34 | 2012 |
| Molecular beam epitaxy of transition metal nitrides for superconducting device applications DS Katzer, N Nepal, MT Hardy, BP Downey, DF Storm, EN Jin, R Yan, ... physica status solidi (a) 217 (3), 1900675, 2020 | 26 | 2020 |
| Superior growth, yield, repeatability, and switching performance in GaN-based resonant tunneling diodes TA Growden, DF Storm, EM Cornuelle, ER Brown, W Zhang, BP Downey, ... Applied Physics Letters 116 (11), 2020 | 24 | 2020 |
| 930 kA/cm2 peak tunneling current density in GaN/AlN resonant tunneling diodes grown on MOCVD GaN-on-sapphire template TA Growden, EM Cornuelle, DF Storm, W Zhang, ER Brown, LM Whitaker, ... Applied Physics Letters 114 (20), 2019 | 21 | 2019 |
| Investigation of switching time in GaN/AlN resonant tunneling diodes by experiments and P-SPICE models WD Zhang, TA Growden, DF Storm, DJ Meyer, PR Berger, ER Brown IEEE Transactions on Electron Devices 67 (1), 75-79, 2019 | 18 | 2019 |
| Boron delta-doping dependence on Si/SiGe resonant interband tunneling diodes grown by chemical vapor deposition A Ramesh, TA Growden, PR Berger, R Loo, W Vandervorst, B Douhard, ... IEEE Transactions on electron Devices 59 (3), 602-609, 2012 | 15 | 2012 |
| A nonlinear circuit simulation of switching process in resonant-tunneling diodes WD Zhang, ER Brown, TA Growden, PR Berger, R Droopad IEEE Transactions on Electron Devices 63 (12), 4993-4997, 2016 | 14 | 2016 |
| AlN/GaN/AlN resonant tunneling diodes grown by RF-plasma assisted molecular beam epitaxy on freestanding GaN DF Storm, TA Growden, W Zhang, ER Brown, N Nepal, DS Katzer, ... Journal of Vacuum Science & Technology B 35 (2), 2017 | 12 | 2017 |
| Experimental determination of quantum-well lifetime effect on large-signal resonant tunneling diode switching time TA Growden, ER Brown, W Zhang, R Droopad, PR Berger Applied Physics Letters 107 (15), 2015 | 12 | 2015 |
| Effects of growth temperature on electrical properties of GaN/AlN based resonant tunneling diodes with peak current density up to 1.01 MA/cm2 EM Cornuelle, TA Growden, DF Storm, ER Brown, W Zhang, BP Downey, ... AIP Advances 10 (5), 2020 | 11 | 2020 |
| Electroluminescence in Unipolar-Doped Resonant-Tunneling Diodes: A Competition between Interband Tunneling and Impact Ionization ER Brown, WD Zhang, TA Growden, P Fakhimi, PR Berger Physical Review Applied 16 (5), 054008, 2021 | 7 | 2021 |
| Dependence of growth temperature on the electrical properties and microstructure of MBE-grown AlN/GaN resonant tunneling diodes on sapphire DF Storm, TA Growden, EM Cornuelle, PR Peri, T Osadchy, JW Daulton, ... Journal of Vacuum Science & Technology B 38 (3), 2020 | 7 | 2020 |
| Fabrication and characterization of GaN/AlN resonant tunneling diodes WD Zhang, TA Growden, ER Brown, PR Berger, DF Storm, DJ Meyer High-Frequency GaN Electronic Devices, 249-281, 2020 | 6 | 2020 |
| Electrical properties of high permittivity epitaxial SrCaTiO3 grown on AlGaN/GaN heterostructures EN Jin, BP Downey, VJ Gokhale, JA Roussos, MT Hardy, TA Growden, ... APL Materials 9 (11), 2021 | 5 | 2021 |
| Gallium nitride cross-gap light emitters based on unipolar-doped tunneling structures ER Brown, W Zhang, T Growden, PR Berger, D Storm, D Meyer US Patent 10,461,216, 2019 | 5 | 2019 |
| Micro-transfer printing of GaN HEMTs for heterogeneous integration and flexible RF circuit design BP Downey, A Xie, S Mack, DS Katzer, JG Champlain, Y Cao, N Nepal, ... 2020 Device Research Conference (DRC), 1-2, 2020 | 4 | 2020 |
| Methods for attaining high interband tunneling current in III-Nitrides TA Growden, S Krishnamoorthy, DN Nath, A Ramesh, S Rajan, PR Berger 70th Device Research Conference, 163-164, 2012 | 4 | 2012 |
Paul R. BergerProfessor of Electrical and Computer Engineering, Ohio State University在 ieee.org 的电子邮件经过验证
