| Failure mechanism models for electromigration D Young, A Christou IEEE Transactions on Reliability 43 (2), 186-192, 1994 | 151 | 1994 |
| Solid phase formation in Au: Ge/Ni, Ag/In/Ge, In/Au: Ge GaAs ohmic contact systems A Christou Solid-State Electronics 22 (2), 141-149, 1979 | 111 | 1979 |
| Achievements and limitations in optimized GaAs films grown on Si by molecular‐beam epitaxy A Georgakilas, P Panayotatos, J Stoemenos, JL Mourrain, A Christou Journal of applied physics 71 (6), 2679-2701, 1992 | 103 | 1992 |
| Pt and PtSix Schottky contacts on n‐type β‐SiC NA Papanicolaou, A Christou, ML Gipe Journal of applied physics 65 (9), 3526-3530, 1989 | 97 | 1989 |
| Failure model for silver electrochemical migration S Yang, A Christou IEEE Transactions on Device and Materials Reliability 7 (1), 188-196, 2007 | 85 | 2007 |
| Initial stage of silver electrochemical migration degradation S Yang, J Wu, A Christou Microelectronics Reliability 46 (9-11), 1915-1921, 2006 | 78 | 2006 |
| Generation and annihilation of antiphase domain boundaries in GaAs on Si grown by molecular beam epitaxy A Georgakilas, J Stoemenos, K Tsagaraki, P Komninou, N Flevaris, ... Journal of materials research 8 (8), 1908-1921, 1993 | 67 | 1993 |
| Development ot ohmic contacts for GaAs devices using epitaxial Ge films WT Anderson, A Christou, JE Davey IEEE Journal of Solid-State Circuits 13 (4), 430-435, 1978 | 48 | 1978 |
| Effect of doping on electron traps in metalorganic molecular‐beam epitaxial GaxIn1−xP/GaAs heterostructures EC Paloura, A Ginoudi, G Kiriakidis, A Christou Applied physics letters 59 (24), 3127-3129, 1991 | 44 | 1991 |
| Refractory passivated ion-implanted GaAs ohmic contacts A Christou, JE Davey US Patent 4,330,343, 1982 | 39 | 1982 |
| Calculations of optical properties for quaternary III–V semiconductor alloys in the transparent region and above (0.2–4.0 eV) M Linnik, A Christou Physica B: Condensed Matter 318 (2-3), 140-161, 2002 | 36 | 2002 |
| Ohmic contacts for group III-V n-type semiconductors using epitaxial germanium films JE Davey, A Christou US Patent 4,188,710, 1980 | 36 | 1980 |
| Low‐temperature interdiffusion between aluminum thin films and GaAs A Christou, HM Day Journal of Applied Physics 47 (9), 4217-4219, 1976 | 36 | 1976 |
| Silicide formation and interdiffusion effects in Si-Ta, SiO2-Ta AND Si-PtSi-Ta thin film structures A Christou, HM Day Journal of Electronic Materials 5, 1-12, 1976 | 36 | 1976 |
| Surface treatment of (11̄02) sapphire and (100) silicon for molecular beam epitaxial growth A Christou, ED Richmond, BR Wilkins, AR Knudson Applied physics letters 44 (8), 796-798, 1984 | 34 | 1984 |
| Formation of epitaxial si-ge heterostructures by solid phase epitaxy SM Prokes, WF Tseng, A Christou US Patent 4,975,387, 1990 | 33 | 1990 |
| How radiation affects polymeric materials M Al-Sheikhly, A Christou IEEE transactions on reliability 43 (4), 551-556, 1994 | 31 | 1994 |
| Photoreflectance measurement of strain in epitaxial GaAs on silicon A Dimoulas, P Tzanetakis, A Georgakilas, OJ Glembocki, A Christou Journal of applied physics 67 (9), 4389-4392, 1990 | 29 | 1990 |
| Structure and thermal stability of sputtered Au–Ta films A Christou, H Day Journal of Applied Physics 44 (8), 3386-3393, 1973 | 29 | 1973 |
| Attachment of DNA probes on gallium arsenide surface L Mohaddes-Ardabili, LJ Martı́nez-Miranda, J Silverman, A Christou, ... Applied physics letters 83 (1), 192-194, 2003 | 28 | 2003 |
