| Selective high-resistance zones formed by oxygen annealing for-GaO Schottky diode applications Q He, X Zhou, Q Li, W Hao, Q Liu, Z Han, K Zhou, C Chen, J Peng, G Xu, ... IEEE Electron Device Letters 43 (11), 1933-1936, 2022 | 39 | 2022 |
| 2.7 kV Low Leakage Vertical PtOx/β-Ga2O3 Schottky Barrier Diodes with Self-Aligned Mesa Termination Z Han, G Jian, X Zhou, Q He, W Hao, J Liu, B Li, H Huang, Q Li, X Zhao, ... IEEE Electron Device Letters, 2023 | 29 | 2023 |
| Large-area β-Ga2O3 Schottky barrier diode and its application in DC–DC converters W Guo, Z Han, X Zhao, G Xu, S Long Journal of Semiconductors 44 (7), 072805, 2023 | 18 | 2023 |
| Elevated barrier height originated from electric dipole effect and improved breakdown characteristics in PtOx/β-Ga2O3 Schottky barrier diodes G Jian, W Hao, Z Shi, Z Han, K Zhou, Q Liu, Q He, X Zhou, C Chen, ... Journal of Physics D: Applied Physics 55 (30), 304003, 2022 | 16 | 2022 |
| β-Ga2O3 junction barrier Schottky diode with NiO p-well floating field rings Q He, W Hao, Q Li, Z Han, S He, Q Liu, X Zhou, G Xu, S Long Chinese Physics B 32 (12), 128507, 2023 | 10 | 2023 |
| Vertical β-Ga2O3 power electronics G Xu, F Wu, Q Liu, Z Han, W Hao, J Zhou, X Zhou, S Yang, S Long J. Semicond 44 (7), 070301, 2023 | 8 | 2023 |
| Ga2O3 Photon‐Controlled Diode for Sensitive DUV/X‐Ray Detection and High‐Resolution Array Imaging Application Z Peng, X Hou, Z Han, Z Gan, C Li, F Wu, S Bai, S Yu, Y Liu, K Yang, ... Advanced Functional Materials 34 (42), 2405277, 2024 | 6 | 2024 |
| Oxygen vacancies and local amorphization introduced by high fluence neutron irradiation in β-Ga2O3 power diodes J Liu, Z Han, L Ren, X Yang, G Xu, W Hao, X Zhao, S Yang, D Lu, Y Han, ... Applied Physics Letters 123 (11), 2023 | 6 | 2023 |
| 1 kV Vertical -Ga2O3 Heterojunction Barrier Schottky Diode with Hybrid Unipolar and Bipolar Operation W Hao, Q He, Z Han, X Zhao, G Xu, S Yang, S Long 2023 35th International Symposium on Power Semiconductor Devices and ICs …, 2023 | 6 | 2023 |
| High breakdown voltage of 1.3 kV and low turn-on voltage of 0.48 V β-Ga2O3 heterojunction barrier Schottky diode with tungsten Schottky contact Q Li, W Hao, J Liu, Z Han, S He, X Zhou, G Xu, S Long Applied Physics Express 17 (6), 066501, 2024 | 4 | 2024 |
| 8.7 A/700 V β-Ga2O3 Schottky barrier diode demonstrated by oxygen annealing combined with self-aligned mesa termination F Wu, Z Han, J Liu, Y Wang, W Hao, X Zhou, G Xu, Y Lv, Z Feng, S Long Applied Physics Express 17 (3), 036504, 2024 | 4 | 2024 |
| Vertical Vertical β-Ga₂O₃ Power Diodes: From Interface Engineering to Edge Termination J Wen, W Hao, Z Han, F Wu, Q Li, J Liu, Q Liu, X Zhou, G Xu, S Yang, ... IEEE Transactions on Electron Devices 71 (3), 1606-1617, 2024 | 4 | 2024 |
| Alpha particle detection based on low leakage and high-barrier vertical PtOx/β-Ga2O3 Schottky barrier diode S Bai, X Hou, X Meng, L Ren, C Li, Z Han, S Yu, Y Liu, Z Peng, Y Han, ... Applied Physics Letters 125 (6), 2024 | 2 | 2024 |
| The Role of Line-Shaped Defects in Premature Breakdown of Power Diode and Suppression by Oxygen Annealing J Liu, Q Li, Z Han, G Xu, S Yang, Z Zheng, S Long 2024 36th International Symposium on Power Semiconductor Devices and ICs …, 2024 | 2 | 2024 |
| A Power-On-Reset Circuit With Accurate Trigger-Point Voltage and Ultralow Typical Quiescent Current for Emerging Nonvolatile Memory L He, C Xie, Z Han, Q Wu, H Chen, S Long, X Li, Z Song IEEE Transactions on Very Large Scale Integration (VLSI) Systems, 2024 | 2 | 2024 |
| Negative bias stress stable PtOx/InGaZnOx Schottky barrier diodes optimized by oxygen annealing H Li, Z Han, X Zhou, G Xu, S Long Journal of Applied Physics 135 (11), 2024 | 2 | 2024 |
| 2.7 kVβ- Ga2O3 Heterojunction Barrier Schottky Diode with Low Leakage Current < 1 mA/cm2 Based upon RESURF Effect W Hao, G Xu, F Wu, Z Han, Q Li, X Zhou, S Yang, S Long 2024 36th International Symposium on Power Semiconductor Devices and ICs …, 2024 | 1 | 2024 |
| Simulation studies of floating field plate in β-Ga2O3 power devices and modules Z Han, G Xu, X Xiang, W Hao, Y Li, X Zhou, X Yan, S Long Journal of Vacuum Science & Technology A 41 (5), 2023 | 1 | 2023 |
| Vertical GaN Schottky Barrier Diode With Hybrid PNiO Junction Termination Extension S Li, S Yang, Z Han, W Hao, K Sheng, G Xu, S Long IEEE Journal of the Electron Devices Society, 2024 | | 2024 |
| Improved β-Ga2O3 Schottky Barrier Diodes Featuring p-NiO Gradual Junction Termination Extension within Mesa Structure Z Han, W Hao, J Liu, G Xu, Q Hu, Z Zheng, S Yang, S Long 2024 36th International Symposium on Power Semiconductor Devices and ICs …, 2024 | | 2024 |
Guangwei XuUniversity of Science and Technology of China在 ustc.edu.cn 的电子邮件经过验证
