| Effect of the threshold kinetics on the filament relaxation behavior of Ag‐based diffusive memristors SA Chekol, S Menzel, RW Ahmad, R Waser, S Hoffmann‐Eifert Advanced functional materials 32 (15), 2111242, 2022 | 49 | 2022 |
| AC–Te-based binary OTS device exhibiting excellent performance and high thermal stability for selector application SA Chekol, J Yoo, J Park, J Song, C Sung, H Hwang Nanotechnology 29 (34), 345202, 2018 | 38 | 2018 |
| 3D stackable and scalable binary ovonic threshold switch devices with excellent thermal stability and low leakage current for high‐density cross‐point memory applications J Yoo, SH Kim, SA Chekol, J Park, C Sung, J Song, D Lee, H Hwang Advanced Electronic Materials 5 (7), 1900196, 2019 | 34 | 2019 |
| Self-limited CBRAM with threshold selector for 1S1R crossbar array applications J Song, J Woo, S Lim, SA Chekol, H Hwang IEEE Electron Device Letters 38 (11), 1532-1535, 2017 | 33 | 2017 |
| Effects of Liner Thickness on the Reliability of AgTe/TiO2-Based Threshold Switching Devices J Song, J Woo, J Yoo, SA Chekol, S Lim, C Sung, H Hwang IEEE Transactions on Electron Devices 64 (11), 4763-4767, 2017 | 32 | 2017 |
| Te-based binary OTS selectors with excellent selectivity (>105), endurance (>108) and thermal stability (>450°C) J Yoo, Y Koo, SA Chekol, J Park, J Song, H Hwang 2018 IEEE Symposium on VLSI Technology, 207-208, 2018 | 24 | 2018 |
| Microstructural engineering in interface-type synapse device for enhancing linear and symmetric conductance changes J Park, C Lee, M Kwak, SA Chekol, S Lim, M Kim, J Woo, H Hwang, D Lee Nanotechnology 30 (30), 305202, 2019 | 23 | 2019 |
| W/WO3− x based three-terminal synapse device with linear conductance change and high on/off ratio for neuromorphic application J Go, Y Kim, M Kwak, J Song, SA Chekol, JD Kwon, H Hwang Applied Physics Express 12 (2), 026503, 2019 | 21 | 2019 |
| An excellent performance of a C-Te OTS device with amorphous Ge interfacial layer for selector application SA Chekol, J Song, J Yoo, S Lim, H Hwang Applied Physics Letters 114 (10), 2019 | 20 | 2019 |
| NbO2-Based Frequency Storable Coupled Oscillators for Associative Memory Application D Lee, E Cha, J Park, C Sung, K Moon, SA Chekol, H Hwang IEEE Journal of the Electron Devices Society 6, 250-253, 2018 | 20 | 2018 |
| Hardware implementation of neural network using pre-programmed resistive device for pattern recognition W Choi, K Moon, M Kwak, C Sung, J Lee, J Song, J Park, SA Chekol, ... Solid-State Electronics 153, 79-83, 2019 | 13 | 2019 |
| Strategies to Control the Relaxation Kinetics of Ag‐Based Diffusive Memristors and Implications for Device Operation SA Chekol, S Menzel, R Waser, S Hoffmann‐Eifert Advanced Electronic Materials 8 (11), 2200549, 2022 | 12 | 2022 |
| An ag/hfo2/pt threshold switching device with an ultra-low leakage (< 10 fa), high on/offratio (> 1011), and low threshold voltage (< 0.2 v) for energy-efficient neuromorphic … SA Chekol, F Cüppers, R Waser, S Hoffmann-Eifert 2021 IEEE International Memory Workshop (IMW), 1-4, 2021 | 9 | 2021 |
| Thermally stable Te-based binary OTS device for selector application SA Chekol, J Yoo, H Hwang 2018 Non-Volatile Memory Technology Symposium (NVMTS), 1-4, 2018 | 6 | 2018 |
| Communication—reduced off-current of NbO2 by thermal oxidation of polycrystalline Nb wire SA Chekol, J Song, J Park, E Cha, S Lim, H Hwang ECS Journal of Solid State Science and Technology 6 (9), P641, 2017 | 6 | 2017 |
| Selector devices for emerging memories SA Chekol, J Song, J Park, J Yoo, S Lim, H Hwang Memristive Devices for Brain-Inspired Computing, 135-164, 2020 | 5 | 2020 |
| Excellent data retention characteristic of Te-based conductive-bridge RAM using semiconducting Te filament for storage class memory S Lee, J Song, S Lim, SA Chekol, H Hwang Solid-State Electronics 153, 8-11, 2019 | 5 | 2019 |
| SET Kinetics of Ag/HfO2-Based Diffusive Memristors under Various Counter-Electrode Materials SA Chekol, R Nacke, S Aussen, S Hoffmann-Eifert Micromachines 14 (3), 571, 2023 | 3 | 2023 |
| Unveiling the relaxation dynamics of based diffusive memristors for use in neuromorphic computing SA Chekol, R Waser, M Wuttig Fachgruppe für Materialwissenschaft und Werkstofftechnik, 2024 | | 2024 |
| Controllability of Relaxation Behavior in Ag-based Diffusive Memristors SA Chekol, R Waser, S Hoffmann-Eifert 2023 Device Research Conference (DRC), 1-2, 2023 | | 2023 |
Hyunsang HwangPOSTECH, Korea在 postech.ac.kr 的电子邮件经过验证
