| Vertical InAs/GaAsSb/GaSb tunneling field-effect transistor on Si with S = 48 mV/decade and Ion= 10 μA/μm for Ioff= 1 nA/μm at Vds= 0.3 V E Memisevic, J Svensson, M Hellenbrand, E Lind, LE Wernersson 2016 IEEE International Electron Devices Meeting (IEDM), 19.1. 1-19.1. 4, 2016 | 131 | 2016 |
| Individual defects in InAs/InGaAsSb/GaSb nanowire tunnel field-effect transistors operating below 60 mV/decade E Memisevic, M Hellenbrand, E Lind, AR Persson, S Sant, A Schenk, ... Nano letters 17 (7), 4373-4380, 2017 | 102 | 2017 |
| Scaling of vertical InAs–GaSb nanowire tunneling field-effect transistors on Si E Memišević, J Svensson, M Hellenbrand, E Lind, LE Wernersson IEEE Electron Device Letters 37 (5), 549-552, 2016 | 72 | 2016 |
| Electrical characterization and modeling of gate-last vertical InAs nanowire MOSFETs on Si M Berg, OP Kilpi, KM Persson, J Svensson, M Hellenbrand, E Lind, ... IEEE Electron Device Letters 37 (8), 966-969, 2016 | 34 | 2016 |
| High-Performance Vertical III-V Nanowire MOSFETs on Si with gm> 3 mS/μm OP Kilpi, M Hellenbrand, J Svensson, AR Persson, RWE Lind, ... IEEE Electron Device Letters, 2020 | 31 | 2020 |
| Impact of band-tails on the subthreshold swing of III-V tunnel field-effect transistor E Memisevic, E Lind, M Hellenbrand, J Svensson, LE Wernersson IEEE Electron Device Letters 38 (12), 1661-1664, 2017 | 29 | 2017 |
| Low-Frequency Noise in III–V Nanowire TFETs and MOSFETs M Hellenbrand, E Memišević, M Berg, OP Kilpi, J Svensson, ... IEEE Electron Device Letters 38 (11), 1520-1523, 2017 | 23 | 2017 |
| Protons: Critical Species for Resistive Switching in Interface‐Type Memristors S Kunwar, CB Somodi, RA Lalk, BX Rutherford, Z Corey, P Roy, D Zhang, ... Advanced Electronic Materials 9 (1), 2200816, 2023 | 19 | 2023 |
| Low-frequency noise in nanowire and planar III-V MOSFETs M Hellenbrand, OP Kilpi, J Svensson, E Lind, LE Wernersson Microelectronic Engineering, 110986, 2019 | 18 | 2019 |
| Vertical nanowire III–V MOSFETs with improved high-frequency gain OP Kilpi, M Hellenbrand, J Svensson, E Lind, LE Wernersson Electronics Letters 56 (13), 669-671, 2020 | 14 | 2020 |
| Ferroelectricity and negative piezoelectric coefficient in orthorhombic phase pure ZrO2 thin films JPB Silva, MC Istrate, M Hellenbrand, A Jan, MT Becker, J Symonowicz, ... Applied Materials Today 30, 101708, 2023 | 13 | 2023 |
| High performance, electroforming-free, thin film memristors using ionic Na 0.5 Bi 0.5 TiO 3 C Yun, M Webb, W Li, R Wu, M Xiao, M Hellenbrand, A Kursumovic, ... Journal of Materials Chemistry C 9 (13), 4522-4531, 2021 | 12 | 2021 |
| Electroforming-Free HfO2:CeO2 Vertically Aligned Nanocomposite Memristors with Anisotropic Dielectric Response H Dou, X Gao, D Zhang, S Dhole, Z Qi, B Yang, MN Hasan, JH Seo, Q Jia, ... ACS Applied Electronic Materials 3 (12), 5278-5286, 2021 | 11 | 2021 |
| Effects of traps in the gate stack on the small-signal RF response of III-V nanowire MOSFETs M Hellenbrand, E Lind, OP Kilpi, LE Wernersson Solid-State Electronics, 2020 | 11 | 2020 |
| Thin film design of amorphous hafnium oxide nanocomposites enabling strong interfacial resistive switching uniformity M Hellenbrand, B Bakhit, H Dou, M Xiao, MO Hill, Z Sun, A Mehonic, ... Science Advances 9 (25), eadg1946, 2023 | 10 | 2023 |
| Multi-level resistive switching in hafnium-oxide-based devices for neuromorphic computing M Hellenbrand, J MacManus-Driscoll Nano Convergence 10 (1), 44, 2023 | 9 | 2023 |
| Capacitance Measurements in Vertical III–V Nanowire TFETs M Hellenbrand, E Memisevic, J Svensson, A Krishnaraja, E Lind, ... IEEE Electron Device Letters 39 (7), 943-946, 2018 | 9 | 2018 |
| A Method for Determining Trap Distributions of Specific Channel Surfaces in InGaAs Tri-Gate MOSFETs S Netsu, M Hellenbrand, CB Zota, Y Miyamoto, E Lind IEEE Journal of the Electron Devices Society 6, 408-412, 2018 | 8 | 2018 |
| 1/f and RTS noise in InGaAs nanowire MOSFETs C Möhle, CB Zota, M Hellenbrand, E Lind Microelectronic Engineering 178, 52-55, 2017 | 8 | 2017 |
| Engineering of Grain Boundaries in CeO2 Enabling Tailorable Resistive Switching Properties H Dou, M Hellenbrand, M Xiao, Z Hu, S Kunwar, A Chen, ... Advanced Electronic Materials 9 (5), 2201186, 2023 | 6 | 2023 |
Erik LindProfessor i nanoelektronik, Lunds Universitet在 eit.lth.se 的电子邮件经过验证
