On the origin of carrier localization in Ga1− xInxNyAs1− y/GaAs quantum wells MA Pinault, E Tournie Applied Physics Letters 78 (11), 1562-1564, 2001 | 171 | 2001 |
Mechanisms affecting the photoluminescence spectra of GaInNAs after post-growth annealing E Tournié, MA Pinault, A Guzmán Applied physics letters 80 (22), 4148-4150, 2002 | 111 | 2002 |
Thick boron doped diamond single crystals for high power electronics J Achard, F Silva, R Issaoui, O Brinza, A Tallaire, H Schneider, K Isoird, ... Diamond and Related Materials 20 (2), 145-152, 2011 | 104 | 2011 |
Annealing effects on the crystal structure of GaInNAs quantum wells with large In and N content grown by molecular beam epitaxy A Hierro, JM Ulloa, JM Chauveau, A Trampert, MA Pinault, E Tournié, ... Journal of applied physics 94 (4), 2319-2324, 2003 | 83 | 2003 |
Influence of alloy stability on the photoluminescence properties of GaAsN/GaAs quantum wells grown by molecular beam epitaxy MA Pinault, E Tournié Applied Physics Letters 79 (21), 3404-3406, 2001 | 60 | 2001 |
Impurity-to-band activation energy in phosphorus doped diamond I Stenger, MA Pinault-Thaury, T Kociniewski, A Lusson, E Chikoidze, ... Journal of Applied Physics 114 (7), 2013 | 55 | 2013 |
The n-type doping of diamond: Present status and pending questions MA Pinault, J Barjon, T Kociniewski, F Jomard, J Chevallier Physica B: Condensed Matter 401, 51-56, 2007 | 50 | 2007 |
Interplay between the growth temperature, microstructure, and optical properties of GaInNAs quantum wells JM Chauveau, A Trampert, KH Ploog, MA Pinault, E Tournié Applied physics letters 82 (20), 3451-3453, 2003 | 50 | 2003 |
Determination of the phosphorus content in diamond using cathodoluminescence spectroscopy J Barjon, P Desfonds, MA Pinault, T Kociniewski, F Jomard, J Chevallier Journal of applied physics 101 (11), 2007 | 48 | 2007 |
n‐type CVD diamond doped with phosphorus using the MOCVD technology for dopant incorporation T Kociniewski, J Barjon, MA Pinault, F Jomard, A Lusson, D Ballutaud, ... physica status solidi (a) 203 (12), 3136-3141, 2006 | 47 | 2006 |
GaInNAs/GaAs quantum wells grown by molecular-beam epitaxy emitting above 1.5 μm E Tournie, MA Pinault, M Laügt, JM Chauveau, A Trampert, KH Ploog Applied physics letters 82 (12), 1845-1847, 2003 | 47 | 2003 |
Long wavelength GaInNAs/GaAs quantum-well heterostructures grown by solid-source molecular-beam epitaxy E Tournie, MA Pinault, S Vezian, J Massies, O Tottereau Applied Physics Letters 77 (14), 2189-2191, 2000 | 47 | 2000 |
Growth of thick heavily boron-doped diamond single crystals: Effect of microwave power density R Issaoui, J Achard, F Silva, A Tallaire, A Tardieu, A Gicquel, MA Pinault, ... Applied physics letters 97 (18), 2010 | 46 | 2010 |
From GaAs: N to oversaturated GaAsN: Analysis of the band-gap reduction T Taliercio, R Intartaglia, B Gil, P Lefebvre, T Bretagnon, U Tisch, ... Physical Review B 69 (7), 073303, 2004 | 46 | 2004 |
Homoepitaxial boron‐doped diamond with very low compensation J Barjon, E Chikoidze, F Jomard, Y Dumont, MA Pinault‐Thaury, R Issaoui, ... physica status solidi (a) 209 (9), 1750-1753, 2012 | 44 | 2012 |
Phosphorus-doped (113) CVD diamond: A breakthrough towards bipolar diamond devices JB Marie-Amandine Pinault-Thaury, Solange Temgoua, Rémi Gillet, Hakima ... Applied Physics Letters 114, 112106, 2019 | 43* | 2019 |
n-Type CVD diamond: Epitaxy and doping MA Pinault-Thaury, T Tillocher, N Habka, D Kobor, F Jomard, J Chevallier, ... Materials Science and Engineering: B 176 (17), 1401-1408, 2011 | 41 | 2011 |
Correlations between structural and optical properties of GaInNAs quantum wells grown by MBE JM Chauveau, A Trampert, MA Pinault, E Tournie, K Du, KH Ploog Journal of crystal growth 251 (1-4), 383-387, 2003 | 37 | 2003 |
High reactivity and stability of diamond electrodes: The influence of the B‐doping concentration E Vanhove, J De Sanoit, P Mailley, MA Pinault, F Jomard, P Bergonzo physica status solidi (a) 206 (9), 2063-2069, 2009 | 33 | 2009 |
Growth of thick and heavily boron-doped (113)-oriented CVD diamond films A Tallaire, A Valentin, V Mille, L William, MA Pinault-Thaury, F Jomard, ... Diamond and Related Materials 66, 61-66, 2016 | 32 | 2016 |