| Critical thickness of GaN thin films on sapphire (0001) C Kim, IK Robinson, J Myoung, K Shim, MC Yoo, K Kim Applied physics letters 69 (16), 2358-2360, 1996 | 150 | 1996 |
| Whispering-gallery-modelike-enhanced emission from ZnO nanodisk C Kim, YJ Kim, ES Jang, GC Yi, HH Kim Applied physics letters 88 (9), 2006 | 101 | 2006 |
| Optical characteristics of p‐type GaN films grown by plasma‐assisted molecular beam epitaxy JM Myoung, KH Shim, C Kim, O Gluschenkov, K Kim, S Kim, DA Turnbull, ... Applied Physics Letters 69 (18), 2722-2724, 1996 | 101 | 1996 |
| GaN system compound semiconductor and method for growing crystal thereof CK Kim, TK Yoo US Patent 6,508,878, 2003 | 100 | 2003 |
| Influence of quantum size effects on island coarsening CA Jeffrey, EH Conrad, R Feng, M Hupalo, C Kim, PJ Ryan, PF Miceli, ... Physical review letters 96 (10), 106105, 2006 | 68 | 2006 |
| Method for fabricating GaN substrate CK Kim, JH Yi US Patent 6,211,089, 2001 | 66 | 2001 |
| Wetting-layer transformation for Pb nanocrystals grown on Si (111) R Feng, EH Conrad, MC Tringides, C Kim, PF Miceli Applied physics letters 85 (17), 3866-3868, 2004 | 42 | 2004 |
| Buffer layer strain transfer in AlN/GaN near critical thickness C Kim, IK Robinson, J Myoung, KH Shim, K Kim Journal of applied physics 85 (8), 4040-4044, 1999 | 38 | 1999 |
| 1.54 μm emission mechanism of Er-doped zinc oxide thin films YR Jang, KH Yoo, JS Ahn, C Kim, SM Park Applied Surface Science 257 (7), 2822-2824, 2011 | 36 | 2011 |
| Formation and photoluminescent properties of embedded ZnO quantum dots in ZnO∕ ZnMgO multiple-quantum-well-structured nanorods C Kim, WI Park, GC Yi, M Kim Applied physics letters 89 (11), 2006 | 29 | 2006 |
| Evolution of surface morphology and strain in low-temperature AlN grown by plasma-assisted molecular beam epitaxy KH Shim, J Myoung, O Gluschenkov, K Kim, C Kim, IK and Robinson Jpn. J. Appl. Phys 37, L313, 1998 | 27* | 1998 |
| Apparatus for manufacturing GaN substrate and manufacturing method thereof C Kim US Patent 6,923,859, 2001 | 19 | 2001 |
| Nitride semiconductor light-emitting element and method for fabricating the same CK Kim, TK Yoo US Patent 6,590,234, 2003 | 18 | 2003 |
| Preferential regrowth of indium–tin oxide (ITO) films deposited on GaN (0001) by rf-magnetron sputter KH Shim, MC Paek, BT Lee, C Kim, JY Kang Applied Physics A 72, 471-474, 2001 | 18 | 2001 |
| Nitridation-and buffer-layer-free growth of [1-100]-oriented gan domains on m-plane sapphire substrates by using hydride vapor phas epitaxy Y Seo, S Lee, M Jue, H Yoon, C Kim Appl. Phys. Express 5, 121001, 2012 | 15 | 2012 |
| Zn-triggered critical behavior of the formation of highly coherent domains in a thin film on C Kim, SJ Leem, IK Robinson, WI Park, DH Kim, GC Yi Physical Review B 66 (11), 113404, 2002 | 14 | 2002 |
| A surface flattening mechanism of a heteroepitaxial film consisting of faceted non-flat top twins:[11¯ 3¯]-oriented GaN films grown on m-plane sapphire substrates M Jue, H Yoon, H Lee, S Lee, C Kim Applied Physics Letters 104 (9), 2014 | 12 | 2014 |
| Local strain relaxation in on Si(001) induced by irradiation C Kim, IK Robinson, T Spila, JE Greene Journal of applied physics 83 (12), 7608-7612, 1998 | 12 | 1998 |
| Thru‐Hole Epitaxy: A Highway for Controllable and Transferable Epitaxial Growth D Jang, C Ahn, Y Lee, S Lee, H Lee, D Kim, Y Kim, JY Park, YK Kwon, ... Advanced Materials Interfaces 10 (4), 2201406, 2023 | 11 | 2023 |
| Nanoclustering of vacancies in thin metal films revealed by x-ray diffuse scattering C Kim, R Feng, EH Conrad, PF Miceli Applied Physics Letters 91 (9), 2007 | 11 | 2007 |
Jae-Min MyoungYonsei University在 yonsei.ac.kr 的电子邮件经过验证
