| Electronic band structure of compressively strained Ge1− xSnx with x< 0.11 studied by contactless electroreflectance K Zelazna, MP Polak, P Scharoch, J Serafinczuk, M Gladysiewicz, ... Applied Physics Letters 106 (14), 2015 | 44 | 2015 |
| Electromodulation spectroscopy of direct optical transitions in Ge1− xSnx layers under hydrostatic pressure and built-in strain F Dybała, K Żelazna, H Maczko, M Gladysiewicz, J Misiewicz, ... Journal of Applied Physics 119 (21), 2016 | 28 | 2016 |
| Optical absorption and thermal conductivity of GaAsPN absorbers grown on GaP in view of their use in multijunction solar cells S Ilahi, S Almosni, F Chouchane, M Perrin, K Zelazna, N Yacoubi, ... Solar Energy Materials and Solar Cells 141, 291-298, 2015 | 28 | 2015 |
| Nitrogen-related intermediate band in P-rich GaNxPyAs1−x−y alloys K Zelazna, M Gladysiewicz, MP Polak, S Almosni, A Létoublon, C Cornet, ... Scientific reports 7 (1), 15703, 2017 | 17 | 2017 |
| Temperature dependence of energy gap of Ge1− xSnx alloys with x< 0.11 studied by photoreflectance K Zelazna, M Wełna, J Misiewicz, J Dekoster, R Kudrawiec Journal of Physics D: Applied Physics 49 (23), 235301, 2016 | 14 | 2016 |
| Photoreflectance studies of optical transitions in GaNPAs intermediate band solar cell absorbers K Zelazna, R Kudrawiec, A Luce, KM Yu, YJ Kuang, CW Tu, ... Solar Energy Materials and Solar Cells 188, 99-104, 2018 | 12 | 2018 |
| Stability of the intermediate band energy position upon temperature changes in GaNP and GaNPAs M Wełna, K Żelazna, A Létoublon, C Cornet, R Kudrawiec Solar Energy Materials and Solar Cells 196, 131-137, 2019 | 9 | 2019 |
| Structural characterization of doped thick GaInNAs layers-ambiguities and challenges D Pucicki, K Bielak, B Ściana, W Dawidowski, K Żelazna, J Serafińczuk, ... Journal of Electrical Engineering 65 (5), 299-303, 2014 | 5 | 2014 |
| LP-MOVPE growth and properties of high Si-doped InGaAs contact layer for quantum cascade laser applications B Ściana, M Badura, W Dawidowski, K Bielak, D Radziewicz, D Pucicki, ... Opto-Electronics Review 24 (2), 95-102, 2016 | 4 | 2016 |
| Technology and properties of low-pressure metalorganic vapour phase epitaxy grown InGaAs/AlInAs superlattice for quantum cascade laser applications M Badura, K Bielak, B Ściana, D Radziewicz, D Pucicki, W Dawidowski, ... Optica Applicata 46 (2), 2016 | 3 | 2016 |
| Radiative and nonradiative recombination processes in GaNP (As) alloys M Wełna, K Żelazna, A Létoublon, C Cornet, MS Zieliński, R Kudrawiec Materials Science and Engineering: B 276, 115567, 2022 | 1 | 2022 |
| GaAsPN Absorbers Grown on GaP for Multijunction Solar Cells: Optical Absorption and Thermal Conductivity Properties M da Silva, S Ilahi, S Almosni, F Chouchane, M Perrin, K Zelazna, ... 19th International Conference on Molecular-Beam Epitaxy (IC-MBE 2016), 2016 | | 2016 |
| RTA effects on optical absorption and thermal conductivity of GaAsPN grown on GaP for tandem solar cell applications S Ilahi, S Almosni, F Chouchane, M Perrin, K Zelazna, N Yacoubi, ... European Materials Research Society-Spring Meeting 2016 (E-MRS 2016 Spring …, 2016 | | 2016 |
| Electronic band structure and optical properties of GaNxPyAs1-xy with y≥ 0.6 studied by electro-modulation spectroscopy and photoluminescence K Zelazna, M Gladysiewicz, R Kudrawiec, W Walukiewicz, S Almosni, ... Compound semiconductor week 2015, 2015 | | 2015 |
