| Numerical modeling of abrupt heterojunctions using a thermionic-field emission boundary condition K Yang, JR East, GI Haddad Solid-State Electronics 36 (3), 321-330, 1993 | 266 | 1993 |
| In Vivo Silicon-Based Flexible Radio Frequency Integrated Circuits Monolithically Encapsulated with Biocompatible Liquid Crystal Polymers GT Hwang, D Im, SE Lee, J Lee, M Koo, SY Park, S Kim, K Yang, SJ Kim, ... Acs Nano 7 (5), 4545-4553, 2013 | 125 | 2013 |
| Reliable memristive switching memory devices enabled by densely packed silver nanocone arrays as electric-field concentrators BK You, JM Kim, DJ Joe, K Yang, Y Shin, YS Jung, KJ Lee ACS nano 10 (10), 9478-9488, 2016 | 112 | 2016 |
| Design, modeling, and characterization of monolithically integrated InP-based (1.55/spl mu/m) high-speed (24 Gb/s) pin/HBT front-end photoreceivers K Yang, AL Gutierrez-Aitken, X Zhang, GI Haddad, P Bhattacharya Journal of lightwave technology 14 (8), 1831-1839, 1996 | 100 | 1996 |
| Gallium nitride high electron mobility transistor having inner field-plate for high power applications K Yang, S Lee, K Lee, K Ko US Patent App. 11/716,446, 2008 | 97 | 2008 |
| High-efficiency class-A power amplifiers with a dual-bias-control scheme K Yang, GI Haddad, JR East IEEE Transactions on Microwave Theory and Techniques 47 (8), 1426-1432, 1999 | 97 | 1999 |
| Ka-band 5-bit MMIC phase shifter using InGaAs PIN switching diodes JG Yang, K Yang IEEE Microwave and Wireless Components Letters 21 (3), 151-153, 2011 | 56 | 2011 |
| Theoretical and experimental DC characterization of InGaAs-based abrupt emitter HBT's K Yang, JC Cowles, JR East, GI Haddad IEEE Transactions on Electron Devices 42 (6), 1047-1058, 1995 | 51 | 1995 |
| 16-GHz bandwidth InAlAs-InGaAs monolithically integrated pin/HBT photoreceiver AL Gutierrez-Aitken, K Yang, X Zhang, GI Haddad, P Bhattacharya, ... IEEE Photonics Technology Letters 7 (11), 1339-1341, 1995 | 49 | 1995 |
| Numerical study on the injection performance of AlGaAs/GaAs abrupt emitter heterojunction bipolar transistors K Yang, JR East, GI Haddad IEEE transactions on electron devices 41 (2), 138-147, 1994 | 49 | 1994 |
| Fabrication method of submicron gate using anisotropic etching SK Jeon, MJ Kim, KH Yang, YS Kwon US Patent 6,372,594, 2002 | 48 | 2002 |
| A 1.52 THz RTD Triple-Push Oscillator With a-Level Output Power J Lee, M Kim, K Yang IEEE Transactions on Terahertz Science and Technology 6 (2), 336-340, 2015 | 46 | 2015 |
| A self‐consistent model of Γ‐X mixing in GaAs/AlAs/GaAs quantum well structures using the quantum transmitting boundary method JP Sun, RK Mains, K Yang, GI Haddad Journal of applied physics 74 (8), 5053-5060, 1993 | 44 | 1993 |
| CML-type monostable bistable logic element (MOBILE) using InP-based monolithic RTD/HBT technology S Choi, B Lee, T Kim, K Yang Electronics Letters 40 (13), 1, 2004 | 41 | 2004 |
| Monolithically integrated SiGe-Si PIN-HBT front-end photoreceivers JS Rieh, D Klotzkin, O Qasaimeh, LH Lu, K Yang, LPB Katehi, ... IEEE Photonics Technology Letters 10 (3), 415-417, 1998 | 39 | 1998 |
| A novel high-speed multiplexing IC based on resonant tunneling diodes S Choi, Y Jeong, J Lee, K Yang IEEE transactions on nanotechnology 8 (4), 482-486, 2009 | 38 | 2009 |
| High-linearity K-band absorptive-type MMIC switch using GaN PIN-diodes JG Yang, K Yang IEEE microwave and wireless components letters 23 (1), 37-39, 2013 | 35 | 2013 |
| Low DC-power Ku-band differential VCO based on an RTD/HBT MMIC technology S Choi, Y Jeong, K Yang IEEE Microwave and wireless components letters 15 (11), 742-744, 2005 | 34 | 2005 |
| High dynamic-range CMOS image sensor cell based on self-adaptive photosensing operation S Lee, K Yang IEEE transactions on electron devices 53 (7), 1733-1735, 2006 | 33 | 2006 |
| High fmaxInP double heterojunction bipolar transistors with chirped InGaAs/InP superlattice base-collector junction grown by CBE K Yang, GO Munns, GI Haddad IEEE Electron Device Letters 18 (11), 553-555, 1997 | 33 | 1997 |
