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| Single-mode monolithic quantum-dot VCSEL in 1.3 μm with sidemode suppression ratio over 30 dB YH Chang, PC Peng, WK Tsai, G Lin, FI Lai, RS Hsiao, HP Yang, HC Yu, ... IEEE photonics technology letters 18 (7), 847-849, 2006 | 40 | 2006 |
| Electrically injected 1.3-μm quantum-dot photonic-crystal surface-emitting lasers MY Hsu, G Lin, CH Pan Optics Express 25 (26), 32697-32704, 2017 | 37 | 2017 |
| High power lasers based on submonolayer InAs–GaAs quantum dots and InGaAs quantum wells AR Kovsh, AE Zhukov, NA Maleev, SS Mikhrin, DA Livshits, ... Microelectronics journal 34 (5-8), 491-493, 2003 | 30 | 2003 |
| Low threshold current and widely tunable external cavity lasers with chirped multilayer InAs/InGaAs/GaAs quantum-dot structure G Lin, PY Su, HC Cheng Optics Express 20 (4), 3941-3947, 2012 | 29 | 2012 |
| Singlemode InAs quantum dot photonic crystal VCSELs HPD Yang, YH Chang, FI Lai, HC Yu, YJ Hsu, G Lin, RS Hsiao, HC Kuo, ... Electronics Letters 41 (20), 1130-1132, 2005 | 27 | 2005 |
| Engineering laser gain spectrum using electronic vertically coupled InAs-GaAs quantum dots JS Wang, RS Hsiao, JF Chen, CS Yang, G Lin, CY Liang, CM Lai, HY Liu, ... IEEE photonics technology letters 17 (8), 1590-1592, 2005 | 27 | 2005 |
| Comparison of 1300 nm quantum well lasers using different material systems G Lin, CP Lee Optical and quantum electronics 34, 1191-1200, 2002 | 25 | 2002 |
| Tunable slow light device using quantum dot semiconductor laser PC Peng, CT Lin, HC Kuo, WK Tsai, JN Liu, S Chi, SC Wang, G Lin, ... Optics Express 14 (26), 12880-12886, 2006 | 24 | 2006 |
| High-power (200mW) singlemode operation of InGaAsN/GaAs ridge waveguide lasers with wavelength around 1.3 µm AR Kovsh, JS Wang, RS Hsiao, LP Chen, DA Livshits, G Lin, VM Ustinov, ... Electronics Letters 39 (24), 1, 2003 | 20 | 2003 |
| Quantum-dot surface emitting distributed feedback lasers using indium–tin–oxide as top claddings TY Chang, CH Pan, KB Hong, CH Lin, G Lin, CP Lee, TC Lu IEEE Photonics Technology Letters 28 (15), 1633-1636, 2016 | 19 | 2016 |
| Characteristics of InGaAs submonolayer quantum-dot and InAs quantum-dot photonic-crystal vertical-cavity surface-emitting lasers HPD Yang, IC Hsu, YH Chang, FI Lai, HC Yu, G Lin, RS Hsiao, ... Journal of lightwave technology 26 (11), 1387-1395, 2008 | 19 | 2008 |
| Analysis of relative intensity noise spectra for uniformly and chirpily stacked InAs–InGaAs–GaAs quantum dot lasers G Lin, HL Tang, HC Cheng, HL Chen Journal of lightwave technology 30 (3), 331-336, 2011 | 17 | 2011 |
| Dynamic characteristics of long-wavelength quantum dot vertical-cavity surface-emitting lasers with light injection PC Peng, HC Kuo, WK Tsai, YH Chang, CT Lin, S Chi, SC Wang, G Lin, ... Optics Express 14 (7), 2944-2949, 2006 | 17 | 2006 |
| Low-threshold short-wavelength infrared InGaAs/GaAsSb ‘W’-type QW laser on InP substrate CH Chang, ZL Li, HT Lu, CH Pan, CP Lee, G Lin, SD Lin IEEE Photonics Technology Letters 27 (3), 225-228, 2014 | 16 | 2014 |
| Novel chirped multilayer quantum-dot lasers G Lin, CY Chang, WC Tseng, CP Lee, KF Lin, R Xuan, JY Chi Semiconductor Lasers and Laser Dynamics III 6997, 184-191, 2008 | 15 | 2008 |
| High-power single-mode submonolayer quantum-dot photonic crystal vertical-cavity surface-emitting lasers FI Lai, HPD Yang, G Lin, IC Hsu, JN Liu, NA Maleev, SA Blokhin, HC Kuo, ... IEEE Journal of Selected Topics in Quantum Electronics 13 (5), 1318-1323, 2007 | 13 | 2007 |
| High-power single-mode 1.3-μm lasers based on InAs/AlGaAs/GaAs quantum dot heterostructures DA Livshits, AR Kovsh, AE Zhukov, NA Maleev, SS Mikhrin, AP Vasil’ev, ... Technical physics letters 30, 9-11, 2004 | 13 | 2004 |
| Molecular-beam-epitaxy growth of high-quality InGaAsN∕ GaAs quantum well lasers emitting at 1.3 μm JS Wang, RS Hsiao, G Lin, KF Lin, HY Liu, CM Lai, L Wei, CY Liang, ... Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2004 | 12 | 2004 |
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