| Relaxed, high-quality InP on GaAs by using InGaAs and InGaP graded buffers to avoid phase separation NJ Quitoriano, EA Fitzgerald Journal of applied physics 102 (3), 2007 | 133 | 2007 |
| Mechanical resonance of clamped silicon nanowires measured by optical interferometry M Belov, NJ Quitoriano, S Sharma, WK Hiebert, TI Kamins, S Evoy Journal of Applied Physics 103 (7), 2008 | 107 | 2008 |
| Integration of GaN thin films with dissimilar substrate materials by Pd-In metal bonding and laser lift-off WS Wong, AB Wengrow, Y Cho, A Salleo, NJ Quitoriano, NW Cheung, ... Journal of Electronic Materials 28, 1409-1413, 1999 | 102 | 1999 |
| Integratable nanowire transistors NJ Quitoriano, TI Kamins Nano letters 8 (12), 4410-4414, 2008 | 69 | 2008 |
| Multi-level nanowire structure and method of making the same TI Kamins, N Quitoriano US Patent 8,198,706, 2012 | 64 | 2012 |
| Device for absorbing or emitting light and methods of making the same N Quitoriano, TI Kamins US Patent 8,030,729, 2011 | 51 | 2011 |
| Single-crystal, Si nanotubes, and their mechanical resonant properties NJ Quitoriano, M Belov, S Evoy, TI Kamins Nano letters 9 (4), 1511-1516, 2009 | 47 | 2009 |
| Plasmon enhanced nanowire light emitting diode H Cho, D Fattal, N Quitoriano US Patent 8,129,710, 2012 | 37 | 2012 |
| Nanowire photonic apparatus employing optical field confinement NJ Quitoriano, M Fiorentino, TI Kamins, DA Fattal, HS Cho US Patent 7,474,811, 2009 | 37 | 2009 |
| Optical interconnect C Santori, D Fattal, W Wu, R Bicknell, SY Wang, RS Williams, D Stewart, ... US Patent 8,244,134, 2012 | 32 | 2012 |
| Gold nanoparticle deposition on Si by destabilising gold colloid with HF AJ O’Reilly, C Francis, NJ Quitoriano Journal of colloid and interface science 370 (1), 46-50, 2012 | 29 | 2012 |
| Guiding vapor–liquid–solid nanowire growth using SiO2 NJ Quitoriano, W Wu, TI Kamins Nanotechnology 20 (14), 145303, 2009 | 27 | 2009 |
| Rounded three-dimensional germanium active channel for transistors and sensors H Cho, TI Kamins, N Quitoriano US Patent 8,101,473, 2012 | 26 | 2012 |
| Controlled placement of dopants in memristor active regions NJ Quitoriano, PJ Kuekes, J Yang US Patent 8,455,852, 2013 | 25 | 2013 |
| Graphene Layer With An Engineered Stress Supported On A Substrate NJ Quitoriano, TI Kamins, AM Bratkovski US Patent App. 12/505,265, 2011 | 23 | 2011 |
| Kinetics of the Pd/In thin-film bilayer reaction: implications for transient-liquid-phase wafer bonding N Quitoriano, WS Wong, L Tsakalakos, Y Cho, T Sands Journal of electronic materials 30, 1471-1475, 2001 | 22 | 2001 |
| Ideal, constant-loss nanophotonic mode converter using a Lagrangian approach A Horth, P Cheben, JH Schmid, R Kashyap, NJ Quitoriano Optics Express 24 (6), 6680-6688, 2016 | 21 | 2016 |
| Memristive device W Wu, JP Strachan, RS Williams, M Florentino, SY Wang, NJ Quitoriano, ... US Patent 8,547,727, 2013 | 21 | 2013 |
| Structure including a graphene layer and method for forming the same TI Kamins, RS Williams, N Quitoriano US Patent 8,043,687, 2011 | 19 | 2011 |
| Characterizing defects and transport in Si nanowire devices using Kelvin probe force microscopy SS Bae, N Prokopuk, NJ Quitoriano, SM Adams, R Ragan Nanotechnology 23 (40), 405706, 2012 | 17 | 2012 |
