| Scalable Integration of Coplanar Heterojunction Monolithic Devices on Two-Dimensional In2Se3 S Mukherjee, D Dutta, PK Mohapatra, L Dezanashvili, A Ismach, E Koren ACS nano 14 (12), 17543-17553, 2020 | 36 | 2020 |
| Cross-field optoelectronic modulation via inter-coupled ferroelectricity in 2D In2Se3 D Dutta, S Mukherjee, M Uzhansky, E Koren npj 2D Materials and Applications 5 (1), 81, 2021 | 20 | 2021 |
| Edge-Based Two-Dimensional α-In2Se3–MoS2 Ferroelectric Field Effect Device D Dutta, S Mukherjee, M Uzhansky, PK Mohapatra, A Ismach, E Koren ACS Applied Materials & Interfaces 15 (14), 18505-18515, 2023 | 15 | 2023 |
| Graphene-In2Se3 van der Waals Heterojunction Neuristor for Optical In-Memory Bimodal Operation S Mukherjee, D Dutta, A Ghosh, E Koren ACS nano 17 (22), 22287-22298, 2023 | 13 | 2023 |
| The scaling laws of edge vs. bulk interlayer conduction in mesoscale twisted graphitic interfaces D Dutta, A Oz, O Hod, E Koren Nature Communications 11, 4746, 2020 | 12 | 2020 |
| Monolithic In2Se3–In2O3 heterojunction for multibit non-volatile memory and logic operations using optoelectronic inputs S Mukherjee, D Dutta, M Uzhansky, E Koren npj 2D Materials and Applications 6 (1), 37, 2022 | 10 | 2022 |
| Maskless Device Fabrication and Laser-Induced Doping in MoS2 Field Effect Transistors Using a Thermally Activated Cyclic Polyphthalaldehyde Resist A Kafri, D Dutta, S Mukherjee, PK Mohapatra, A Ismach, E Koren ACS Applied Materials & Interfaces 13 (4), 5399-5405, 2021 | 4 | 2021 |
| Edge State Quantum Interference in Twisted Graphitic Interfaces A Oz, D Dutta, A Nitzan, O Hod, E Koren Advanced Science 9 (14), 2102261, 2022 | 2 | 2022 |
| Langmuir-Blodgett organic films deposition for the formation of conformal 2D inorganic-organic heterostructures M Khenkin, PK Mohapatra, B Kaziev, A Patsha, D Beitner, P Shekhter, ... Applied Surface Science 655, 159587, 2024 | 1 | 2024 |
| Heterostructure having non-volatile actuatable polarization E Koren, D Dutta, S Mukherjee US Patent US20240162367A1, 2024 | | 2024 |
| Coplanar heterojunction monolithic device and method of fabricating the same S Mukherjee, D Dutta, E Koren US Patent US20230307542A1, 2023 | | 2023 |
| Edge-based 2D alpha-In2Se3-MoS2 ferroelectric field effect device D Dutta, S Mukherjee, M Uzhansky, PK Mohapatra, A Ismach, E Koren arXiv preprint arXiv:2301.00568, 2023 | | 2023 |
| Coplanar heterojunction monolithic device and method of fabrication the same E Koren, S Mukherjee, D Dutta WO Patent WO/2022/101,912, 2022 | | 2022 |
Elad KorenMaterials Science and Engineering, Technion在 technion.ac.il 的电子邮件经过验证
