| Radiation effects in pinned photodiode CMOS image sensors: Pixel performance degradation due to total ionizing dose V Goiffon, M Estribeau, O Marcelot, P Cervantes, P Magnan, M Gaillardin, ... IEEE Transactions on Nuclear Science 59 (6), 2878-2887, 2012 | 110 | 2012 |
| Multilevel RTS in proton irradiated CMOS image sensors manufactured in a deep submicron technology V Goiffon, GR Hopkinson, P Magnan, F Bernard, G Rolland, O Saint-Pé IEEE transactions on nuclear science 56 (4), 2132-2141, 2009 | 89 | 2009 |
| Enhanced Radiation-Induced Narrow Channel Effects in Commercialm Bulk Technology M Gaillardin, V Goiffon, S Girard, M Martinez, P Magnan, P Paillet IEEE Transactions on Nuclear Science 58 (6), 2807-2815, 2011 | 85 | 2011 |
| Displacement damage effects due to neutron and proton irradiations on CMOS image sensors manufactured in deep submicron technology C Virmontois, V Goiffon, P Magnan, S Girard, C Inguimbert, S Petit, ... IEEE Transactions on Nuclear Science 57 (6), 3101-3108, 2010 | 84 | 2010 |
| Total ionizing dose versus displacement damage dose induced dark current random telegraph signals in CMOS image sensors C Virmontois, V Goiffon, P Magnan, O Saint-Pé, S Girard, S Petit, ... IEEE Transactions on Nuclear Science 58 (6), 3085-3094, 2011 | 76 | 2011 |
| Analysis of total dose-induced dark current in CMOS image sensors from interface state and trapped charge density measurements V Goiffon, C Virmontois, P Magnan, S Girard, P Paillet IEEE Transactions on Nuclear Science 57 (6), 3087-3094, 2010 | 74 | 2010 |
| Simulation of single particle displacement damage in silicon–Part II: Generation and long-time relaxation of damage structure A Jay, M Raine, N Richard, N Mousseau, V Goiffon, A Hémeryck, ... IEEE Transactions on Nuclear Science 64 (1), 141-148, 2016 | 72 | 2016 |
| Overview of ionizing radiation effects in image sensors fabricated in a deep-submicrometer CMOS imaging technology V Goiffon, M Estribeau, P Magnan IEEE transactions on electron devices 56 (11), 2594-2601, 2009 | 64 | 2009 |
| Identification of radiation induced dark current sources in pinned photodiode CMOS image sensors V Goiffon, C Virmontois, P Magnan, P Cervantes, S Place, M Gaillardin, ... IEEE Transactions on Nuclear Science 59 (4), 918-926, 2012 | 59 | 2012 |
| Random telegraph signals in proton irradiated CCDs and APS GR Hopkinson, V Goiffon, A Mohammadzadeh IEEE Transactions on Nuclear Science 55 (4), 2197-2204, 2008 | 59 | 2008 |
| Pixel level characterization of pinned photodiode and transfer gate physical parameters in CMOS image sensors V Goiffon, M Estribeau, J Michelot, P Cervantes, A Pelamatti, O Marcelot, ... IEEE Journal of the Electron Devices Society 2 (4), 65-76, 2014 | 58 | 2014 |
| Estimation and modeling of the full well capacity in pinned photodiode CMOS image sensors A Pelamatti, V Goiffon, M Estribeau, P Cervantes, P Magnan IEEE electron device letters 34 (7), 900-902, 2013 | 57 | 2013 |
| Similarities between proton and neutron induced dark current distribution in CMOS image sensors C Virmontois, V Goiffon, P Magnan, S Girard, O Saint-Pe, S Petit, ... IEEE Transactions on Nuclear Science 59 (4), 927-936, 2012 | 55 | 2012 |
| Evidence of a novel source of random telegraph signal in CMOS image sensors V Goiffon, P Magnan, P Martin-Gonthier, C Virmontois, M Gaillardin IEEE electron device letters 32 (6), 773-775, 2011 | 54 | 2011 |
| Dark current random telegraph signals in solid-state image sensors C Virmontois, V Goiffon, MS Robbins, L Tauziède, H Geoffray, M Raine, ... IEEE Transactions on Nuclear Science 60 (6), 4323-4331, 2013 | 53 | 2013 |
| Influence of transfer gate design and bias on the radiation hardness of pinned photodiode CMOS image sensors V Goiffon, M Estribeau, P Cervantes, R Molina, M Gaillardin, P Magnan IEEE Transactions on Nuclear Science 61 (6), 3290-3301, 2014 | 52 | 2014 |
| Radiation-induced dose and single event effects in digital CMOS image sensors C Virmontois, A Toulemont, G Rolland, A Materne, V Lalucaa, V Goiffon, ... IEEE Transactions on Nuclear Science 61 (6), 3331-3340, 2014 | 50 | 2014 |
| Total dose evaluation of deep submicron CMOS imaging technology through elementary device and pixel array behavior analysis V Goiffon, P Magnan, O Saint-Pé, F Bernard, G Rolland IEEE Transactions on Nuclear Science 55 (6), 3494-3501, 2008 | 47 | 2008 |
| Simulation of single particle displacement damage in silicon–part I: global approach and primary interaction simulation M Raine, A Jay, N Richard, V Goiffon, S Girard, M Gaillardin, P Paillet IEEE Transactions on Nuclear Science 64 (1), 133-140, 2016 | 44 | 2016 |
| Displacement damage effects in pinned photodiode CMOS image sensors C Virmontois, V Goiffon, F Corbiere, P Magnan, S Girard, A Bardoux IEEE Transactions on Nuclear Science 59 (6), 2872-2877, 2012 | 44 | 2012 |
Sylvain GIRARDProfessor, Université de Saint-Etienne, Laboratoire Hubert Curien, IUF, France在 univ-st-etienne.fr 的电子邮件经过验证
