| Molecular beam epitaxial growth of Bi2Te3 and Sb2Te3 topological insulators on GaAs (111) substrates: a potential route to fabricate topological insulator pn junction Z Zeng, TA Morgan, D Fan, C Li, Y Hirono, X Hu, Y Zhao, JS Lee, J Wang, ... AIP Advances 3 (7), 2013 | 90 | 2013 |
| Controlled growth of Zn-polar ZnO epitaxial film by nitridation of sapphire substrate ZX Mei, XL Du, Y Wang, MJ Ying, ZQ Zeng, H Zheng, JF Jia, QK Xue, ... Applied Physics Letters 86 (11), 2005 | 79 | 2005 |
| Low-temperature interface engineering for high-quality ZnO epitaxy on Si (111) substrate XN Wang, Y Wang, ZX Mei, J Dong, ZQ Zeng, HT Yuan, TC Zhang, XL Du, ... Applied Physics Letters 90 (15), 2007 | 65 | 2007 |
| Growth of In2O3 single-crystalline film on sapphire (0 0 0 1) substrate by molecular beam epitaxy ZX Mei, Y Wang, XL Du, ZQ Zeng, MJ Ying, H Zheng, JF Jia, QK Xue, ... Journal of crystal growth 289 (2), 686-689, 2006 | 64 | 2006 |
| Controlled growth of O-polar ZnO epitaxial film by oxygen radical preconditioning of sapphire substrate ZX Mei, Y Wang, XL Du, MJ Ying, ZQ Zeng, H Zheng, JF Jia, QK Xue, ... Journal of Applied Physics 96 (12), 7108-7111, 2004 | 52 | 2004 |
| Cubic nitridation layers on sapphire substrate and their role in polarity selection of ZnO films Y Wang, XL Du, ZX Mei, ZQ Zeng, MJ Ying, HT Yuan, JF Jia, QK Xue, ... Applied Physics Letters 87 (5), 2005 | 48 | 2005 |
| Effect of sapphire substrate nitridation on the elimination of rotation domains in ZnO epitaxial films M Ying, X Du, Z Mei, Z Zeng, H Zheng, Y Wang, J Jia, Z Zhang, Q Xue Journal of Physics D: Applied Physics 37 (21), 3058, 2004 | 46 | 2004 |
| Heterojunction band offsets and dipole formation at BaTiO3/SrTiO3 interfaces S Balaz, Z Zeng, LJ Brillson Journal of Applied Physics 114 (18), 2013 | 43 | 2013 |
| Microstructure and crystal defects in epitaxial ZnO film grown on Ga modified (0001) sapphire surface HP Sun, XQ Pan, XL Du, ZX Mei, ZQ Zeng, QK Xue Applied physics letters 85 (19), 4385-4387, 2004 | 41 | 2004 |
| Determination of the polarity of ZnO thin films by electron energy-loss spectroscopy Y Wang, QY Xu, XL Du, ZX Mei, ZQ Zeng, QK Xue, Z Zhang Physics Letters A 320 (4), 322-326, 2004 | 35 | 2004 |
| Surface modification of MgAl2O4 (111) for growth of high-quality ZnO epitaxial films ZQ Zeng, YZ Liu, HT Yuan, ZX Mei, XL Du, JF Jia, QK Xue, Z Zhang Applied physics letters 90 (8), 2007 | 34 | 2007 |
| Optical identification of oxygen vacancy formation at SrTiO3–(Ba, Sr) TiO3 heterostructures MM Rutkowski, K McNicholas, ZQ Zeng, F Tuomisto, LJ Brillson Journal of Physics D: Applied Physics 47 (25), 255303, 2014 | 31 | 2014 |
| MBE grown GaAsBi/GaAs double quantum well separate confinement heterostructures D Fan, PC Grant, SQ Yu, VG Dorogan, X Hu, Z Zeng, C Li, ME Hawkridge, ... Journal of Vacuum Science & Technology B 31 (3), 2013 | 30 | 2013 |
| Bismuth Nano-droplets for Group-V Based Molecular-Beam Droplet Epitaxy GJS C. Li, Z. Q. Zeng, D. S. Fan, Y. Hirono, J. Wu, T. A. Morgan, X. Hu, S ... APPLIED PHYSICS LETTERS 99 (24), 243113, 2011 | 27 | 2011 |
| Interface engineering for lattice-matched epitaxy of ZnO on (La, Sr)(Al, Ta) O3 (111) substrate MJ Ying, XL Du, YZ Liu, ZT Zhou, ZQ Zeng, ZX Mei, JF Jia, H Chen, ... Applied Physics Letters 87 (20), 2005 | 27 | 2005 |
| Bismuth surfactant mediated growth of InAs quantum dots by molecular beam epitaxy D Fan, Z Zeng, VG Dorogan, Y Hirono, C Li, YI Mazur, SQ Yu, ... Journal of Materials Science: Materials in Electronics 24, 1635-1639, 2013 | 26 | 2013 |
| Molecular beam epitaxy growth of GaAsBi/GaAs/AlGaAs separate confinement heterostructures D Fan, Z Zeng, X Hu, VG Dorogan, C Li, M Benamara, ME Hawkridge, ... Applied Physics Letters 101 (18), 2012 | 26 | 2012 |
| Fabrication and characterization of high quality n-ZnO/p-GaN heterojunction light emission diodes H Zheng, ZX Mei, ZQ Zeng, YZ Liu, LW Guo, JF Jia, QK Xue, Z Zhang, ... Thin Solid Films 520 (1), 445-447, 2011 | 26 | 2011 |
| Defect characteristics of ZnO film grown on (0001) sapphire with an ultrathin gallium wetting layer Y Wang, XL Du, ZX Mei, ZQ Zeng, QY Xu, QK Xue, Z Zhang Journal of crystal growth 273 (1-2), 100-105, 2004 | 21 | 2004 |
| Direct MBE growth of metamorphic nBn infrared photodetectors on 150 mm Ge-Si substrates for heterogeneous integration JM Fastenau, D Lubyshev, SA Nelson, M Fetters, H Krysiak, J Zeng, ... Journal of Vacuum Science & Technology B 37 (3), 2019 | 15 | 2019 |
Jinfeng JiaDept. of Phys., Shanghai Jiaotong University在 sjtu.edu.cn 的电子邮件经过验证
Jinfeng JiaDept. of Phys., Shanghai Jiaotong University在 sjtu.edu.cn 的电子邮件经过验证
Gregory SalamoProfessor of Physics, University of Arkansas在 uark.edu 的电子邮件经过验证