| New approaches and understandings in the growth of cubic silicon carbide FL Via, M Zimbone, C Bongiorno, A La Magna, G Fisicaro, I Deretzis, ... Materials 14 (18), 5348, 2021 | 44 | 2021 |
| Extended defects in 3C-SiC: Stacking faults, threading partial dislocations, and inverted domain boundaries M Zimbone, A Sarikov, C Bongiorno, A Marzegalli, V Scuderi, ... Acta Materialia 213, 116915, 2021 | 31 | 2021 |
| Ni/4H-SiC interaction and silicide formation under excimer laser annealing for ohmic contact P Badalà, S Rascunà, B Cafra, A Bassi, E Smecca, M Zimbone, ... Materialia 9, 100528, 2020 | 22 | 2020 |
| Generation and Termination of Stacking Faults by Inverted Domain Boundaries in 3C-SiC M Zimbone, EG Barbagiovanni, C Bongiorno, C Calabretta, L Calcagno, ... Crystal Growth & Design 20 (5), 3104-3111, 2020 | 19 | 2020 |
| Temperature investigation on 3C-SiC homo-epitaxy on four-inch wafers R Anzalone, M Zimbone, C Calabretta, M Mauceri, A Alberti, R Reitano, ... Materials 12 (20), 3293, 2019 | 19 | 2019 |
| Laser annealing of P and Al implanted 4H-SiC epitaxial layers C Calabretta, M Agati, M Zimbone, S Boninelli, A Castiello, A Pecora, ... Materials 12 (20), 3362, 2019 | 17 | 2019 |
| 3C-SiC growth on inverted silicon pyramids patterned substrate M Zimbone, M Zielinski, C Bongiorno, C Calabretta, R Anzalone, ... Materials 12 (20), 3407, 2019 | 15 | 2019 |
| Characterization of 4H-and 6H-like stacking faults in cross section of 3C-SiC epitaxial layer by room-temperature μ-photoluminescence and μ-raman analysis V Scuderi, C Calabretta, R Anzalone, M Mauceri, F La Via Materials 13 (8), 1837, 2020 | 13 | 2020 |
| Effect of nitrogen and aluminum doping on 3C-SiC heteroepitaxial layers grown on 4 Off-axis Si (100) C Calabretta, V Scuderi, R Anzalone, M Mauceri, D Crippa, A Cannizzaro, ... Materials 14 (16), 4400, 2021 | 12 | 2021 |
| 3C-SiC grown on Si by using a Si1-xGex buffer layer M Zimbone, M Zielinski, EG Barbagiovanni, C Calabretta, F La Via Journal of Crystal Growth 519, 1-6, 2019 | 12 | 2019 |
| Growth of thick [1 1 1]-oriented 3C-SiC films on T-shaped Si micropillars M Agati, S Boninelli, C Calabretta, F Mancarella, M Mauceri, D Crippa, ... Materials & Design 208, 109833, 2021 | 11 | 2021 |
| Effects of thermal annealing processes in Phosphorous implanted 4H-SiC layers A Severino, D Mello, S Boninelli, F Roccaforte, F Giannazzo, P Fiorenza, ... Materials Science Forum 963, 407-411, 2019 | 11 | 2019 |
| Impact of nitrogen on the selective closure of stacking faults in 3C-SiC C Calabretta, V Scuderi, C Bongiorno, A Cannizzaro, R Anzalone, ... Crystal Growth & Design 22 (8), 4996-5003, 2022 | 9 | 2022 |
| Thermal Annealing of high dose P implantation in 4H-SiC C Calabretta, M Zimbone, EG Barbagiovanni, S Boninelli, N Piluso, ... Materials Science Forum 963, 399-402, 2019 | 9 | 2019 |
| 3C-SiC bulk growth: Effect of growth rate and doping on defects and stress F La Via, M Mauceri, V Scuderi, C Calabretta, M Zimbone, R Anzalone Materials Science Forum 1004, 120-125, 2020 | 8 | 2020 |
| Graphite Assisted P and Al Implanted 4H-SiC Laser Annealing C Calabretta, A Pecora, M Agati, S Privitera, A Muoio, S Boninelli, ... Materials Science Forum 1062, 204-208, 2022 | 3 | 2022 |
| Isolation of bidimensional electron gas in AlGaN/GaN heterojunction using Ar ion implantation A Scandurra, M Testa, G Franzò, G Greco, F Roccaforte, ME Castagna, ... Materials Science in Semiconductor Processing 168, 107871, 2023 | 2 | 2023 |
| 4H-SiC MOSFET source and body laser annealing process C Calabretta, M Agati, M Zimbone, S Boninelli, A Castiello, A Pecora, ... Materials Science Forum 1004, 705-711, 2020 | 2 | 2020 |
| Exploring crystal recovery and dopant activation in coated laser annealing on ion implanted 4H–SiC epitaxial layers C Calabretta, A Pecora, M Agati, A Muoio, V Scuderi, S Privitera, ... Materials Science in Semiconductor Processing 174, 108175, 2024 | 1 | 2024 |
| Advanced approach of bulk (111) 3C-SiC epitaxial growth C Calabretta, V Scuderi, C Bongiorno, R Anzalone, R Reitano, ... Microelectronic Engineering 283, 112116, 2024 | 1 | 2024 |
