| Electronic synapses made of layered two-dimensional materials Y Shi, X Liang, B Yuan, V Chen, H Li, F Hui, Z Yu, F Yuan, E Pop, ... Nature Electronics 1 (8), 458-465, 2018 | 553 | 2018 |
| Bridging biological and artificial neural networks with emerging neuromorphic devices: fundamentals, progress, and challenges J Tang, F Yuan, X Shen, Z Wang, M Rao, Y He, Y Sun, X Li, W Zhang, Y Li, ... Advanced Materials 31 (49), 1902761, 2019 | 546 | 2019 |
| Low‐Voltage, Optoelectronic CH3NH3PbI3−xClx Memory with Integrated Sensing and Logic Operations F Zhou, Y Liu, X Shen, M Wang, F Yuan, Y Chai Advanced Functional Materials 28 (15), 1800080, 2018 | 220 | 2018 |
| Real-Time Observation of the Electrode-Size-Dependent Evolution Dynamics of the Conducting Filaments in a SiO2 Layer F Yuan, Z Zhang, C Liu, F Zhou, HM Yau, W Lu, X Qiu, HSP Wong, J Dai, ... ACS nano 11 (4), 4097-4104, 2017 | 82 | 2017 |
| Total ionizing dose (TID) effects of γ ray radiation on switching behaviors of Ag/AlO x /Pt RRAM device F Yuan, Z Zhang, JC Wang, L Pan, J Xu, CS Lai Nanoscale research letters 9, 1-6, 2014 | 44 | 2014 |
| Scaling the CBRAM switching layer diameter to 30 nm improves cycling endurance S Fujii, JAC Incorvia, F Yuan, S Qin, F Hui, Y Shi, Y Chai, M Lanza, ... IEEE Electron Device Letters 39 (1), 23-26, 2017 | 26 | 2017 |
| A combined modulation of set current with reset voltage to achieve 2-bit/cell performance for filament-based RRAM F Yuan, Z Zhang, L Pan, J Xu IEEE Journal of the Electron Devices Society 2 (6), 154-157, 2014 | 19 | 2014 |
| Hybrid aluminum and indium conducting filaments for nonpolar resistive switching of Al/AlOx/indium tin oxide flexible device F Yuan, JC Wang, Z Zhang, YR Ye, L Pan, J Xu, CS Lai Applied Physics Express 7 (2), 024204, 2014 | 17 | 2014 |
| Vertically foldable memory array structure L Pan, F Yuan US Patent 8,958,246, 2015 | 14 | 2015 |
| Interface-induced two-step RESET for filament-based multi-level resistive memory F Yuan, S Shen, Z Zhang, L Pan, J Xu Superlattices and Microstructures 91, 90-97, 2016 | 13 | 2016 |
| A physics-based compact model for material-and operation-oriented switching behaviors of CBRAM YD Zhao, JJ Hu, P Huang, F Yuan, Y Chai, XY Liu, JF Kang 2016 IEEE International Electron Devices Meeting (IEDM), 7.6. 1-7.6. 4, 2016 | 12 | 2016 |
| γ-ray irradiation effects on TiN/HfOx/Pt resistive random access memory devices F Yuan, S Shen, Z Zhang 2015 IEEE Aerospace Conference, 1-7, 2015 | 11 | 2015 |
| Vertical selection transistor, memory cell, and three-dimensional memory array structure and method for fabricating the same L Pan, F Yuan US Patent 8,748,934, 2014 | 9 | 2014 |
| Retention behavior of graphene oxide resistive switching memory on flexible substrate F Yuan, YR Ye, JC Wang, Z Zhang, L Pan, J Xu, CS Lai 2013 IEEE 5th International Nanoelectronics Conference (INEC), 288-290, 2013 | 8 | 2013 |
| Retention behaviour of graphene oxide resistive switching memory F Yuan, YR Ye, CS Lai, JC Wang, Z Zhang, L Pan, J Xu International journal of nanotechnology 11 (1-234), 106-115, 2014 | 6 | 2014 |
| Mobility enhancement of strained GaSb p-channel metal–oxide–semiconductor field-effect transistors with biaxial compressive strain YW Chen, Z Tan, LF Zhao, J Wang, YZ Liu, C Si, F Yuan, WH Duan, J Xu Chinese Physics B 25 (3), 038504, 2016 | 5 | 2016 |
| In-situ observation of Cu filaments evolution in SiO2 layer Z Zhang, F Yuan, C Liu, F Zhou, HM Yau, W Lu, XY Qiu, HSP Wong, ... Microscopy and Microanalysis 23 (S1), 1622-1623, 2017 | 1 | 2017 |
| Total Ionizing Dose (TID) Effects of γ Ray Radiation on Ag/AlOx/Pt Resistive Switching Memory F Yuan, Z Zhang, S Shen, L Pan, J Xu, Memory Research Team APS March Meeting Abstracts 2014, C1. 311, 2014 | | 2014 |
| Total Ionizing Dose (TID) Effects of γ Ray Radiation on Filament Based AlOx RRAM CSL Fang Yuan, Zhigang Zhang, Jer-Chyi Wang*, Liyang Pan, Jun Xu* 2014 International Symposium on Next-Generation Electronics (ISNE), 2014 | | 2014 |
| Bidirectional Unipolar Switching of Al/AlOx/ITO Flexible ReRAM CSL Fang Yuan, Jer-Chyi Wang*, Zhigang Zhang, Yu-Ren Ye, Liyang Pan, Jun Xu International Workshop on Dielectric Thin Films for Future Electron Devices …, 2013 | | 2013 |
H.-S. Philip WongProfessor of Electrical Engineering, Stanford University在 stanford.edu 的电子邮件经过验证
