| Plasma texturing for silicon solar cells: From pyramids to inverted pyramids-like structures M Moreno, D Daineka, PR i Cabarrocas Solar Energy Materials and Solar Cells 94 (5), 733-737, 2010 | 127 | 2010 |
| Method for forming a film with a graded bandgap by deposition of an amorphous material from a plasma PRI Cabarrocas, P Bulkin, D Daineka, P Leempoel, P Descamps, ... US Patent 7,964,438, 2011 | 40 | 2011 |
| High density plasma enhanced chemical vapor deposition of optical thin films D Daineka, P Bulkin, G Girard, JE Bourée, B Drévillon The European Physical Journal-Applied Physics 26 (1), 3-9, 2004 | 32 | 2004 |
| Temperature dependence of the optical functions of amorphous silicon-based materials: application to in situ temperature measurements by spectroscopic ellipsometry D Daineka, V Suendo, PR i Cabarrocas Thin Solid Films 468 (1-2), 298-302, 2004 | 26 | 2004 |
| Advances in the deposition of microcrystalline silicon at high rate by distributed electron cyclotron resonance PR i Cabarrocas, P Bulkin, D Daineka, TH Dao, P Leempoel, P Descamps, ... Thin Solid Films 516 (20), 6834-6838, 2008 | 22 | 2008 |
| Changes in electronic and adsorption properties under Cs adsorption on GaAs (100) in the transition from As-rich to Ga-rich surface GV Benemanskaya, DV Daineka, GE Frank-Kamenetskaya Surface science 523 (3), 211-217, 2003 | 21 | 2003 |
| Development of electronic band structure of the K-adsorbed Si (111) 7× 7 surface GV Benemanskaya, DV Daineka, GE Frank-Kamenetskaya Journal of Physics: Condensed Matter 11 (35), 6679, 1999 | 16 | 1999 |
| Electronic Structure of the Ultrathin Cs/Si (100)-(2× 1) and Cs/Si (111)-(7× 7) Interfaces in the Threshold Energy Region GV Benemanskaya, DV Daineka, GE Frank-Kamenetskaya Surface Review and Letters 5 (01), 91-95, 1998 | 16 | 1998 |
| Area selective deposition of silicon by plasma enhanced chemical vapor deposition using a fluorinated precursor G Akiki, D Suchet, D Daineka, S Filonovich, P Bulkin, EV Johnson Applied Surface Science 531, 147305, 2020 | 14 | 2020 |
| Piezoresistivity of thin film semiconductors with application to thin film silicon solar cells D Lange, PR i Cabarrocas, N Triantafyllidis, D Daineka Solar Energy Materials and Solar Cells 145, 93-103, 2016 | 11 | 2016 |
| Metallicity and disorder at the alkali-metal/GaAs (001) interface OE Tereshchenko, DV Daineka, D Paget Physical Review B 64 (8), 085310, 2001 | 11 | 2001 |
| Device quality a-Si: H deposited from electron cyclotron resonance at very high deposition rates ME Gueunier-Farret, C Bazin, JP Kleider, C Longeaud, P Bulkin, ... Journal of non-crystalline solids 352 (9-20), 1913-1916, 2006 | 10 | 2006 |
| Protective coatings for front surface silver mirrors by atomic layer deposition P Bulkin, S Gaiaschi, P Chapon, D Daineka, N Kundikova Optics express 28 (11), 15753-15760, 2020 | 9 | 2020 |
| Deposition of amorphous silicon films by electron cyclotron resonance PRI Cabarrocas, P Bulkin, D Daineka, TH Dao, P Leempoel, P Descamps, ... US Patent 8,349,412, 2013 | 9 | 2013 |
| Deposition of optical coatings with real time control by the spectroellipsometry P Bulkin, D Daineka, D Kouznetsov, B Drevillon The European Physical Journal Applied Physics 28 (2), 235-242, 2004 | 9 | 2004 |
| High temperature oxidation of Si (100) by neutral oxygen cluster beam: Coexistence of active and passive oxidation areas DV Daineka, F Pradère, M Châtelet, E Fort Journal of applied physics 92 (2), 1132-1136, 2002 | 9 | 2002 |
| Electronic properties of the Cs covered GaAs (100) Ga-rich surface GV Benemanskaya, DV Daineka, GE Frank-Kamenetskaya Solid state communications 114 (5), 285-289, 2000 | 9 | 2000 |
| Distributed electron cyclotron resonance plasma: A technology for large area deposition of device-quality a-Si: H at very high rate P Leempoel, P Descamps, TK de Meerendré, J Charliac, PR i Cabarrocas, ... Thin Solid Films 516 (20), 6853-6857, 2008 | 8 | 2008 |
| Control and monitoring of optical thin films deposition in a Matrix Distributed Electron Cyclotron Resonance reactor D Daineka, D Kouznetsov, P Bulkin, G Girard, JE Bourée, B Drévillon The European Physical Journal-Applied Physics 28 (3), 343-346, 2004 | 8 | 2004 |
| The electronic properties of the Cs/GaAs (100) interface and the formation of metastable Cs clusters GV Benemanskaya, DV Daineka, GE Frank-Kamenetskaya Journal of Experimental and Theoretical Physics 92, 297-303, 2001 | 8 | 2001 |
