| Nanotube tunneling FET with a core source for ultrasteep subthreshold swing: A simulation study G Musalgaonkar, S Sahay, RS Saxena, MJ Kumar IEEE Transactions on Electron Devices 66 (10), 4425-4432, 2019 | 59 | 2019 |
| A line tunneling field-effect transistor based on misaligned core–shell gate architecture in emerging nanotube FETs G Musalgaonkar, S Sahay, RS Saxena, MJ Kumar IEEE Transactions on Electron Devices 66 (6), 2809-2816, 2019 | 50 | 2019 |
| An impact ionization MOSFET with reduced breakdown voltage based on back-gate misalignment G Musalgaonkar, S Sahay, RS Saxena, MJ Kumar IEEE Transactions on Electron Devices 66 (2), 868-875, 2018 | 16 | 2018 |
| An HDR pixel with over 60-dB dynamic range enhancement using in-pixel parametric amplification G Musalgaonkar, N Priyadarshini, M Sarkar IEEE Transactions on Electron Devices 65 (2), 555-563, 2017 | 4 | 2017 |
| An active load single-ended double flipped voltage follower amplifier and its application S Agrawal, A Shrivastava, A Kumar, G Musalgaonkar 2016 International Conference on Electrical, Electronics, and Optimization …, 2016 | 3 | 2016 |
| TCAD simulation analysis and comparison between triple gate rectangular and trapezoidal finfet G Musalgaonkar, AK Chatterjee Journal of Electron Devices 21, 1881-1887, 2015 | 3 | 2015 |
| Controlling L-BTBT in the ultra-short channel nanowire junctionless accumulation FETs using overlapping gate-on-drain AK Jain, G Musalgaonkar, MJ Kumar 2019 Joint International EUROSOI Workshop and International Conference on …, 2019 | 2 | 2019 |
| CMOS image sensor with tunable conversion gain for improved performance G Musalgaonkar, RS Saxena Sensing and Imaging 20 (1), 16, 2019 | 1 | 2019 |
| A Novel Low-Voltage Differential Double Flipped Voltage Follower Strucutre and Its Derivatives. A Shrivastava, G Musalgaonkar Journal of Active & Passive Electronic Devices 11, 2016 | 1 | 2016 |
| Altering breakdown voltages in gate devices and related methods and systems G Musalgaonkar, N Kaushik, S Jain, H Liu, CR Parthasarathy US Patent App. 17/647,912, 2023 | | 2023 |
| Correction to: CMOS Image Sensor with Tunable Conversion Gain for Improved Performance G Musalgaonkar, RS Saxena Sensing and Imaging 20, 1-2, 2019 | | 2019 |
| STI based trench capacitor for high sensitivity and high dynamic range in CMOS image sensor G Musalgaonkar, M Sarkar, RS Saxena 2017 International Conference on Electron Devices and Solid-State Circuits …, 2017 | | 2017 |
| Simulation Study of Tapered Shape FinFET G Musalgaonkar, A Shrivastava, S Singh, A Acharya Journal of VLSI Design Tools & Technology 6 (1), 21-31, 2016 | | 2016 |
| Design and Analysis of a Low Power Tri-Gate Trapezoidal Finfet G Musalgaonkar, AKG Chatterjee | | 2015 |
| Design and analysis of emerging nanoscale mosfets from low power and high speed perspective G Musalgaonkar Delhi, 0 | | |
Raghvendra Sahai SaxenaSolid State Physics Laboratory在 sspl.drdo.in 的电子邮件经过验证
