| Role of threading dislocation structure on the x‐ray diffraction peak widths in epitaxial GaN films B Heying, XH Wu, S Keller, Y Li, D Kapolnek, BP Keller, SP DenBaars, ... Applied physics letters 68 (5), 643-645, 1996 | 1102 | 1996 |
| Absorption coefficient, energy gap, exciton binding energy, and recombination lifetime of GaN obtained from transmission measurements JF Muth, JH Lee, IK Shmagin, RM Kolbas, HC Casey, BP Keller, ... Applied physics letters 71 (18), 2572-2574, 1997 | 949 | 1997 |
| Very-high power density AlGaN/GaN HEMTs YF Wu, D Kapolnek, JP Ibbetson, P Parikh, BP Keller, UK Mishra IEEE Transactions on Electron Devices 48 (3), 586-590, 2001 | 789 | 2001 |
| Light emitting diodes including modifications for light extraction DB Slater Jr, RC Glass, CM Swoboda, B Keller, J Ibbetson, B Thibeault, ... US Patent 6,791,119, 2004 | 664 | 2004 |
| Defect structure of metal‐organic chemical vapor deposition‐grown epitaxial (0001) GaN/Al2O3 XH Wu, LM Brown, D Kapolnek, S Keller, B Keller, SP DenBaars, ... Journal of applied physics 80 (6), 3228-3237, 1996 | 567 | 1996 |
| Wafer level phosphor coating method and devices fabricated utilizing method A Chitnis, J Ibbetson, B Keller, DT Emerson, J Edmond, MJ Bergmann, ... US Patent 9,159,888, 2015 | 481 | 2015 |
| Wafer level phosphor coating method and devices fabricated utilizing method A Chitnis, J Ibbetson, A Chakraborty, EJ Tarsa, B Keller, J Seruto, Y Fu US Patent 9,024,349, 2015 | 458 | 2015 |
| Structural evolution in epitaxial metalorganic chemical vapor deposition grown GaN films on sapphire D Kapolnek, XH Wu, B Heying, S Keller, BP Keller, UK Mishra, ... Applied Physics Letters 67 (11), 1541-1543, 1995 | 449 | 1995 |
| Very high breakdown voltage and large transconductance realized on GaN heterojunction field effect transistors YF Wu, BP Keller, S Keller, D Kapolnek, P Kozodoy, SP Denbaars, ... Applied physics letters 69 (10), 1438-1440, 1996 | 445 | 1996 |
| Multiple component solid state white light EJ Tarsa, M Dunn, B Keller US Patent 7,005,679, 2006 | 438 | 2006 |
| Multi-chip light emitting device lamps for providing high-CRI warm white light and light fixtures including the same NW Medendorp, M McClear, BP Keller, GR Brandes, RP LeToquin US Patent 8,125,137, 2012 | 429 | 2012 |
| Influence of sapphire nitridation on properties of gallium nitride grown by metalorganic chemical vapor deposition S Keller, BP Keller, YF Wu, B Heying, D Kapolnek, JS Speck, UK Mishra, ... Applied Physics Letters 68 (11), 1525-1527, 1996 | 379 | 1996 |
| Solid state lighting component T Yuan, B Keller, J Ibbetson, E Tarsa, G Negley US Patent 7,821,023, 2010 | 371 | 2010 |
| High Al-content AlGaN/GaN MODFETs for ultrahigh performance YF Wu, BP Keller, P Fini, S Keller, TJ Jenkins, LT Kehias, SP Denbaars, ... IEEE Electron Device Letters 19 (2), 50-53, 1998 | 353 | 1998 |
| GaN microwave electronics UK Mishra, YF Wu, BP Keller, S Keller, SP Denbaars IEEE transactions on microwave theory and techniques 46 (6), 756-761, 1998 | 333 | 1998 |
| Nucleation layer evolution in metal‐organic chemical vapor deposition grown GaN XH Wu, D Kapolnek, EJ Tarsa, B Heying, S Keller, BP Keller, UK Mishra, ... Applied Physics Letters 68 (10), 1371-1373, 1996 | 288 | 1996 |
| Gallium nitride based high power heterojunction field effect transistors: Process development and present status at UCSB S Keller, YF Wu, G Parish, N Ziang, JJ Xu, BP Keller, SP DenBaars, ... IEEE Transactions on Electron Devices 48 (3), 552-559, 2001 | 272 | 2001 |
| Multi-chip light emitting device lamps for providing high-CRI warm white light and light fixtures including the same NW Medendorp, MT McClear, BP Keller, GR Brandes, RP LeToquin US Patent 8,410,680, 2013 | 260 | 2013 |
| System for and method for closed loop electrophoretic deposition of phosphor materials on semiconductor devices EJ Tarsa, M Leung, B Keller, R Underwood, M Youmans US Patent 8,563,339, 2013 | 248 | 2013 |
| Solid state lighting component T Yuan, B Keller, E Tarsa, J Ibbetson, F Morgan, K Dowling, I Lys US Patent 9,793,247, 2017 | 242 | 2017 |
