Analysis and Simulation of Semiconductor Devices S Selberherr 10.1007/978-3-7091-8752-4, 1984 | 4150* | 1984 |
The Monte Carlo Method for Semiconductor Device Simulation C Jacoboni, P Lugli, S Selberherr (Editor) 10.1007/978-3-7091-6963-6, 2012 | 1788 | 2012 |
MOSFET Models for VLSI Circuit Simulation: Theory and Practice N Arora, S Selberherr (Editor) 10.1007/978-3-7091-9247-4, 2012 | 823 | 2012 |
SIMON - A simulator for single-electron tunnel devices and circuits C Wasshuber, H Kosina, S Selberherr IEEE Transactions on Computer-Aided Design of Integrated Circuits and …, 1997 | 540 | 1997 |
Intrinsic Point Defects, Impurities, and Their Diffusion in Silicon P Pichler, S Selberherr (Editor) 10.1007/978-3-7091-0597-9, 2012 | 446 | 2012 |
MINIMOS - A two-dimensional MOS transistor analyzer S Selberherr, A Schütz, HW Pötzl IEEE Journal of Solid-State Circuits 15 (4), 605-615, 1980 | 409 | 1980 |
Computational Single-Electronics C Wasshuber, S Selberherr (Editor) 10.1007/978-3-7091-6257-6, 2001 | 400* | 2001 |
Compact Transistor Modelling for Circuit Design HC De Graaff, FM Klaassen, S Selberherr (Editor) 10.1007/978-3-7091-9043-2, 2012 | 376 | 2012 |
A review of hydrodynamic and energy-transport models for semiconductor device simulation T Grasser, TW Tang, H Kosina, S Selberherr Proceedings of the IEEE 91 (2), 251-274, 2003 | 368 | 2003 |
Hans Goebl: Dialektometrische Studien. Band 2 H Goebl, S Selberherr, WD Rase, H Pudlatz 10.1515/9783110610758 192, viii+379, 2018 | 288 | 2018 |
Analysis and Simulation of Heterostructure Devices V Palankovski, R Quay, S Selberherr (Editor) 10.1007/978-3-7091-0560-3, 2004 | 279 | 2004 |
The effect of general strain on the band structure and electron mobility of silicon E Ungersboeck, S Dhar, G Karlowatz, VA Sverdlov, H Kosina, ... IEEE Transactions on Electron Devices 54 (9), 2183-2190, 2007 | 239 | 2007 |
MOS device modeling at 77 K S Selberherr IEEE Transactions on Electron Devices 36 (8), 1464-1474, 1989 | 233 | 1989 |
Modelling of Interface Carrier Transport for Device Simulation D Schroeder, S Selberherr (Editor) 10.1007/978-3-7091-6644-4, 1994 | 211 | 1994 |
The Drift Diffusion Equation and Its Applications in MOSFET Modeling W Hänsch, S Selberherr (Editor) 10.1007/978-3-7091-9095-1, 2012 | 203 | 2012 |
A CMOS IC for portable EEG acquisition systems R Martins, S Selberherr, FA Vaz IEEE Transactions on Instrumentation and Measurement 47 (5), 1191-1196, 1998 | 203 | 1998 |
Unified particle approach to Wigner-Boltzmann transport in small semiconductor devices M Nedjalkov, H Kosina, S Selberherr, CA Ringhofer, DK Ferry Physical Review B 70 (115319), 1-16, 2004 | 196 | 2004 |
Semiconductor Device Modelling R Baets, J Barker, JA Barnard, TM Barton, ME Clarke, A Cappy, ... 10.1007/978-1-4471-1033-0, 2012 | 194 | 2012 |
Advanced Physical Models for Silicon Device Simulation A Schenk, S Selberherr (Editor) 10.1007/978-3-7091-6494-5, 1998 | 182 | 1998 |
Physically based models of electromigration: From Black’s equation to modern TCAD models RL Orio, H Ceric, S Selberherr Microelectronics Reliability 50 (6), 775-789, 2010 | 178 | 2010 |