| Epitaxial ScxAl1− xN on GaN exhibits attractive high-K dielectric properties J Casamento, H Lee, T Maeda, V Gund, K Nomoto, L van Deurzen, ... Applied Physics Letters 120 (15), 2022 | 36 | 2022 |
| Light-emitting diodes with AlN polarization-induced buried tunnel junctions: A second look K Lee, S Bharadwaj, YT Shao, L van Deurzen, V Protasenko, DA Muller, ... Applied Physics Letters 117 (6), 2020 | 16 | 2020 |
| Optically pumped deep-UV multimode lasing in AlGaN double heterostructure grown by molecular beam homoepitaxy L van Deurzen, R Page, V Protasenko, K Nomoto, HG Xing, D Jena AIP Advances 12 (3), 2022 | 12* | 2022 |
| Molecular beam homoepitaxy of N-polar AlN on bulk AlN substrates J Singhal, J Encomendero, Y Cho, L van Deurzen, Z Zhang, K Nomoto, ... AIP Advances 12 (9), 2022 | 10 | 2022 |
| Bottom tunnel junction blue light-emitting field-effect transistors S Bharadwaj, K Lee, K Nomoto, A Hickman, L van Deurzen, V Protasenko, ... Applied Physics Letters 117 (3), 2020 | 10 | 2020 |
| Dislocation and indium droplet related emission inhomogeneities in InGaN LEDs L van Deurzen, MG Ruiz, K Lee, H Turski, S Bharadwaj, R Page, ... Journal of Physics D: Applied Physics 54 (49), 495106, 2021 | 8 | 2021 |
| Dephasing by optical phonons in GaN defect single-photon emitters Y Geng, J Luo, L van Deurzen, H Xing, D Jena, GD Fuchs, F Rana Scientific Reports 13 (1), 8678, 2023 | 7* | 2023 |
| Epitaxial lattice-matched AlScN/GaN distributed Bragg reflectors L van Deurzen, TS Nguyen, J Casamento, HG Xing, D Jena Applied Physics Letters 123 (24), 2023 | 5 | 2023 |
| Thermal conductivity enhancement of aluminum scandium nitride grown by molecular beam epitaxy GA Alvarez, J Casamento, L van Deurzen, MI Khan, K Khan, E Jeong, ... Materials Research Letters 11 (12), 1048-1054, 2023 | 4 | 2023 |
| Growth kinetics and substrate stability during high- temperature molecular beam epitaxy of AlN nanowires Philipp Maximilian John, Mikel Gómez Ruiz, Len van Deurzen, Jonas Lähnemann ... Nanotechnology 34, 465605, 2023 | 4 | 2023 |
| Excitonic and deel-level emission from N- and Al-polar homoepitaxial AlN grown by molecular beam epitaxy Len van Deurzen, Jashan Singhal, Jimy Encomendero, Naomi Pieczulewski ... APL Materials 11 (8), 081109, 2023 | 4 | 2023 |
| Enhanced efficiency in bottom tunnel junction InGaN blue LEDs L van Deurzen, S Bharadwaj, K Lee, V Protasenko, H Turski, HG Xing, ... Light-Emitting Devices, Materials, and Applications XXV 11706, 30-35, 2021 | 3 | 2021 |
| Dualtronics: leveraging both faces of polar semiconductors L van Deurzen, E Kim, N Pieczulewski, Z Zhang, A Feduniewicz-Zmuda, ... arXiv preprint arXiv:2404.03733, 2024 | | 2024 |
| Ultrawide bandgap semiconductor heterojunction p–n diodes with distributed polarization-doped p-type AlGaN layers on bulk AlN substrates S Agrawal, L van Deurzen, J Encomendero, JE Dill, H Wei Sheena Huang, ... Applied Physics Letters 124 (10), 2024 | | 2024 |
| Bottom tunnel junction light-emitting field-effect transistors S Bharadwaj, K Lee, K Nomoto, A Hickman, L Van Deurzen, HG Xing, ... US Patent App. 18/016,334, 2023 | | 2023 |
| Decoherence by Optical Phonons in GaN Defect Single-Photon Emitters Y Geng, J Luo, L van Deurzen, D Jena, GD Fuchs, F Rana arXiv preprint arXiv:2206.12636, 2022 | | 2022 |
| Next-generation of III-nitride light emitters based on buried tunnel junction design H Turski, M Chlipala, M Siekacz, G Muziol, M Zak, M Hajdel, ... Light-Emitting Devices, Materials, and Applications XXVI, PC120220G, 2022 | | 2022 |
| Cavity optimization for AlGaN heterostructure deep-ultraviolet lasers L van Deurzen, R Page, K Nomoto, V Protasenko, J Encomendero, ... APS March Meeting Abstracts 2022, N12. 001, 2022 | | 2022 |
| Temperature Dependence of Spectral Emission from GaN Defect Quantum Emitters Y Geng, J Luo, L van Deurzen, D Jena, G Fuchs, F Rana APS March Meeting Abstracts 2022, D67. 006, 2022 | | 2022 |
| Epitaxial ScAlN on GaN is a High K Dielectric J Casamento, H Lee, T Maeda, V Gund, K Nomoto, L van Deurzen, A Lal, ... arXiv preprint arXiv:2110.14679, 2021 | | 2021 |
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