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Abdennacer BENALI
Abdennacer BENALI
CNR IOM
在 im2np.fr 的电子邮件经过验证
标题
引用次数
引用次数
年份
Single artificial atoms in silicon emitting at telecom wavelengths
W Redjem, A Durand, T Herzig, A Benali, S Pezzagna, J Meijer, ...
Nature Electronics 3 (12), 738-743, 2020
1522020
Broad diversity of near-infrared single-photon emitters in silicon
A Durand, Y Baron, W Redjem, T Herzig, A Benali, S Pezzagna, J Meijer, ...
Physical Review Letters 126 (8), 083602, 2021
1102021
Optical properties of an ensemble of G-centers in silicon
C Beaufils, W Redjem, E Rousseau, V Jacques, AY Kuznetsov, ...
Physical Review B 97 (3), 035303, 2018
942018
Hyperuniform monocrystalline structures by spinodal solid-state dewetting
M Salvalaglio, M Bouabdellaoui, M Bollani, A Benali, L Favre, JB Claude, ...
Physical Review Letters 125 (12), 126101, 2020
502020
Templated dewetting of single-crystal sub-millimeter-long nanowires and on-chip silicon circuits
M Bollani, M Salvalaglio, A Benali, M Bouabdellaoui, M Naffouti, M Lodari, ...
Nature communications 10 (1), 1-10, 2019
432019
Flexible photonic devices based on dielectric antennas
A Benali, JB Claude, N Granchi, S Checcucci, M Bouabdellaoui, M Zazoui, ...
Journal of Physics: Photonics 2 (1), 015002, 2020
192020
GaAs Core/SrTiO3 Shell Nanowires Grown by Molecular Beam Epitaxy
X Guan, J Becdelievre, B Meunier, A Benali, G Saint-Girons, R Bachelet, ...
Nano letters 16 (4), 2393-2399, 2016
172016
Fabrication of spectrally sharp Si-based dielectric resonators: combining etaloning with Mie resonances
D Toliopoulos, M Khoury, M Bouabdellaoui, N Granchi, JB Claude, ...
Optics Express 28 (25), 37734-37742, 2020
152020
GaAs nanowires with oxidation-proof arsenic capping for the growth of an epitaxial shell
X Guan, J Becdelievre, A Benali, C Botella, G Grenet, P Regreny, ...
Nanoscale 8 (34), 15637-15644, 2016
112016
Metamorphic InAs/InGaAs QWs with electron mobilities exceeding 7× 105 cm2/Vs
A Benali, P Rajak, R Ciancio, JR Plaisier, S Heun, G Biasiol
Journal of Crystal Growth 593, 126768, 2022
92022
Optical simulation of multijunction solar cells based on III-V nanowires on silicon
A Benali, J Michallon, P Regreny, E Drouard, P Rojo, N Chauvin, D Bucci, ...
Energy Procedia 60, 109-115, 2014
82014
Twins and strain relaxation in zinc-blende GaAs nanowires grown on silicon
JC Piñero, D Araújo, CE Pastore, M Gutierrez, C Frigeri, A Benali, ...
Applied Surface Science 395, 195-199, 2017
72017
Nanofils de Ga (AI) As sur silicium pour les cellules photovoltaïques de 3ème génération: simulation et croissance auto-catalysée| Theses. fr
A Benali
Lyon, 2017
12017
Single artificial atoms in silicon emitting at telecom wavelengths
A Durand, W Redjem, T Herzig, A Benali, S Pezzagna, J Meijer, ...
Bulletin of the American Physical Society, 2021
2021
Core-shell AlGaAs nanowires for high efficiency tandem solar cell on Si
M Vettori, A Benali, P Regreny, N Chauvin, E Drouard, V Piazza, ...
Journées Nationales du PhotoVoltaïque (JNPV 2016), 2016
2016
Growth of core (GaAs)/shell (functional oxide) nanowires
X Guan, J Becdelievre, B Meunier, A Benali, G Saint-Girons, R Bachelet, ...
EMN Meeting on Nanowires, 2016
2016
Growth of core (GaAs)/shell (functional oxide) nanowires
X Guan, J Becdelievre, B Meunier, A Benali, G Saint-Girons, R Bachelet, ...
EMN Meeting on Nanowires, 2016
2016
Optical simulation of absorption in tandem solar cells based on III-V nanowires on silicon
A Kaminski-Cachopo, V Maryasin, D Bucci, J Michallon, A Benali, ...
7th Photovoltaic Technical Conference (PVTC 2016), 2016
2016
Growth of self-catalyzed GaAs NWs on silicon substrate depending on the nature of the surface oxide
A Benali, X Guan, J Becdelievre, P Regreny, J Penuelas, C Botella, ...
Journées Surfaces et Interfaces (JSI 2016), 2016
2016
GaAs nanowires with oxidation-proof arsenic capping/decapping method for the growth of an epitaxial shell
X Guan, J Becdelievre, A Benali, C Botella, G Grenet, H Dumont, ...
JSI 2016, 2016
2016
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