Single artificial atoms in silicon emitting at telecom wavelengths W Redjem, A Durand, T Herzig, A Benali, S Pezzagna, J Meijer, ... Nature Electronics 3 (12), 738-743, 2020 | 152 | 2020 |
Broad diversity of near-infrared single-photon emitters in silicon A Durand, Y Baron, W Redjem, T Herzig, A Benali, S Pezzagna, J Meijer, ... Physical Review Letters 126 (8), 083602, 2021 | 110 | 2021 |
Optical properties of an ensemble of G-centers in silicon C Beaufils, W Redjem, E Rousseau, V Jacques, AY Kuznetsov, ... Physical Review B 97 (3), 035303, 2018 | 94 | 2018 |
Hyperuniform monocrystalline structures by spinodal solid-state dewetting M Salvalaglio, M Bouabdellaoui, M Bollani, A Benali, L Favre, JB Claude, ... Physical Review Letters 125 (12), 126101, 2020 | 50 | 2020 |
Templated dewetting of single-crystal sub-millimeter-long nanowires and on-chip silicon circuits M Bollani, M Salvalaglio, A Benali, M Bouabdellaoui, M Naffouti, M Lodari, ... Nature communications 10 (1), 1-10, 2019 | 43 | 2019 |
Flexible photonic devices based on dielectric antennas A Benali, JB Claude, N Granchi, S Checcucci, M Bouabdellaoui, M Zazoui, ... Journal of Physics: Photonics 2 (1), 015002, 2020 | 19 | 2020 |
GaAs Core/SrTiO3 Shell Nanowires Grown by Molecular Beam Epitaxy X Guan, J Becdelievre, B Meunier, A Benali, G Saint-Girons, R Bachelet, ... Nano letters 16 (4), 2393-2399, 2016 | 17 | 2016 |
Fabrication of spectrally sharp Si-based dielectric resonators: combining etaloning with Mie resonances D Toliopoulos, M Khoury, M Bouabdellaoui, N Granchi, JB Claude, ... Optics Express 28 (25), 37734-37742, 2020 | 15 | 2020 |
GaAs nanowires with oxidation-proof arsenic capping for the growth of an epitaxial shell X Guan, J Becdelievre, A Benali, C Botella, G Grenet, P Regreny, ... Nanoscale 8 (34), 15637-15644, 2016 | 11 | 2016 |
Metamorphic InAs/InGaAs QWs with electron mobilities exceeding 7× 105 cm2/Vs A Benali, P Rajak, R Ciancio, JR Plaisier, S Heun, G Biasiol Journal of Crystal Growth 593, 126768, 2022 | 9 | 2022 |
Optical simulation of multijunction solar cells based on III-V nanowires on silicon A Benali, J Michallon, P Regreny, E Drouard, P Rojo, N Chauvin, D Bucci, ... Energy Procedia 60, 109-115, 2014 | 8 | 2014 |
Twins and strain relaxation in zinc-blende GaAs nanowires grown on silicon JC Piñero, D Araújo, CE Pastore, M Gutierrez, C Frigeri, A Benali, ... Applied Surface Science 395, 195-199, 2017 | 7 | 2017 |
Nanofils de Ga (AI) As sur silicium pour les cellules photovoltaïques de 3ème génération: simulation et croissance auto-catalysée| Theses. fr A Benali Lyon, 2017 | 1 | 2017 |
Single artificial atoms in silicon emitting at telecom wavelengths A Durand, W Redjem, T Herzig, A Benali, S Pezzagna, J Meijer, ... Bulletin of the American Physical Society, 2021 | | 2021 |
Core-shell AlGaAs nanowires for high efficiency tandem solar cell on Si M Vettori, A Benali, P Regreny, N Chauvin, E Drouard, V Piazza, ... Journées Nationales du PhotoVoltaïque (JNPV 2016), 2016 | | 2016 |
Growth of core (GaAs)/shell (functional oxide) nanowires X Guan, J Becdelievre, B Meunier, A Benali, G Saint-Girons, R Bachelet, ... EMN Meeting on Nanowires, 2016 | | 2016 |
Growth of core (GaAs)/shell (functional oxide) nanowires X Guan, J Becdelievre, B Meunier, A Benali, G Saint-Girons, R Bachelet, ... EMN Meeting on Nanowires, 2016 | | 2016 |
Optical simulation of absorption in tandem solar cells based on III-V nanowires on silicon A Kaminski-Cachopo, V Maryasin, D Bucci, J Michallon, A Benali, ... 7th Photovoltaic Technical Conference (PVTC 2016), 2016 | | 2016 |
Growth of self-catalyzed GaAs NWs on silicon substrate depending on the nature of the surface oxide A Benali, X Guan, J Becdelievre, P Regreny, J Penuelas, C Botella, ... Journées Surfaces et Interfaces (JSI 2016), 2016 | | 2016 |
GaAs nanowires with oxidation-proof arsenic capping/decapping method for the growth of an epitaxial shell X Guan, J Becdelievre, A Benali, C Botella, G Grenet, H Dumont, ... JSI 2016, 2016 | | 2016 |