| A novel physical unclonable function (PUF) using 16× 16 pure-HfO x ferroelectric tunnel junction array for security applications J Yu, KK Min, Y Kim, S Kim, S Hwang, TH Kim, C Kim, H Kim, JH Lee, ... Nanotechnology 32 (48), 485202, 2021 | 13 | 2021 |
| Investigation on ambipolar current suppression using a stacked gate in an L-shaped tunnel field-effect transistor J Yu, S Kim, D Ryu, K Lee, C Kim, JH Lee, S Kim, BG Park Micromachines 10 (11), 753, 2019 | 13 | 2019 |
| Vertically-Stacked Si0.2Ge0.8 Nanosheet Tunnel FET With 70 mV/Dec Average Subthreshold Swing R Lee, J Lee, K Lee, S Kim, H Ahn, S Kim, HM Kim, C Kim, JH Lee, S Kim, ... IEEE Electron Device Letters 42 (7), 962-965, 2021 | 9 | 2021 |
| Damage-Induced Ferroelectricity in HfOx-Based Thin Film KK Min, HM Kim, Y Kim, C Kim, J Yu, JH Lee, BG Park, D Kwon IEEE Electron Device Letters 43 (5), 713-716, 2022 | 4 | 2022 |
| Influence of gate-source/drain overlap on FeFETs C Kim, DO Kim, WY Choi Solid-State Electronics 214, 108862, 2024 | 2 | 2024 |
| Negative capacitance field-effect transistor with hetero-dielectric structure for suppression of reverse drain induced barrier lowering DO Kim, K Lee, C Kim, S Kim, HM Kim, D Kwon, BG Park Solid-State Electronics 203, 108581, 2023 | 1 | 2023 |
| Circular ferroelectric tunnel junctions for the improvement of memory window and endurance DO Kim, C Kim, HM Kim, J Park, B Jeon, D Kwon, WY Choi Japanese Journal of Applied Physics 62 (SG), SG1044, 2023 | 1 | 2023 |
| Analysis on endurance characteristics of ferroelectric memory device M Kim, S Kim, K Lee, HM Kim, C Kim, DO Kim, BG Park, D Kwon 2022 37th International Technical Conference on Circuits/Systems, Computers …, 2022 | 1 | 2022 |
| Circular Ferroelectric Tunnel Junction for Endurance Improvement DO Kim, K Lee, C Kim, S Kim, HM Kim, D Kwon, WY Choi | | |
