| Shape anisotropy revisited in single-digit nanometer magnetic tunnel junctions K Watanabe, B Jinnai, S Fukami, H Sato, H Ohno Nature communications 9 (1), 663, 2018 | 192 | 2018 |
| Waferless auto conditioning J Guha, S Sant, B Jinnai US Patent 8,784,676, 2014 | 191 | 2014 |
| Chiral-spin rotation of non-collinear antiferromagnet by spin–orbit torque Y Takeuchi, Y Yamane, JY Yoon, R Itoh, B Jinnai, S Kanai, J Ieda, ... Nature Materials 20 (10), 1364-1370, 2021 | 121 | 2021 |
| Nanosecond random telegraph noise in in-plane magnetic tunnel junctions K Hayakawa, S Kanai, T Funatsu, J Igarashi, B Jinnai, WA Borders, ... Physical review letters 126 (11), 117202, 2021 | 110 | 2021 |
| Prediction of UV spectra and UV-radiation damage in actual plasma etching processes using on-wafer monitoring technique B Jinnai, S Fukuda, H Ohtake, S Samukawa Journal of Applied Physics 107 (4), 043302, 2010 | 61 | 2010 |
| Scaling magnetic tunnel junction down to single-digit nanometers—Challenges and prospects B Jinnai, K Watanabe, S Fukami, H Ohno Applied physics letters 116 (16), 2020 | 54 | 2020 |
| Damage mechanism in low-dielectric (low-k) films during plasma processes B Jinnai, T Nozawa, S Samukawa Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2008 | 53 | 2008 |
| High-performance shape-anisotropy magnetic tunnel junctions down to 2.3 nm B Jinnai, J Igarashi, K Watanabe, T Funatsu, H Sato, S Fukami, H Ohno 2020 IEEE International Electron Devices Meeting (IEDM), 24.6. 1-24.6. 4, 2020 | 49 | 2020 |
| Surface reaction enhancement by UV irradiation during Si etching process with chlorine atom beam S Samukawa, B Jinnai, F Oda, Y Morimoto Japanese journal of applied physics 46 (1L), L64, 2007 | 41 | 2007 |
| Spin-orbit torque induced magnetization switching in Co/Pt multilayers B Jinnai, C Zhang, A Kurenkov, M Bersweiler, H Sato, S Fukami, H Ohno Applied Physics Letters 111 (10), 2017 | 34 | 2017 |
| Spin-orbit torque-induced switching of in-plane magnetized elliptic nanodot arrays with various easy-axis directions measured by differential planar Hall resistance Y Takahashi, Y Takeuchi, C Zhang, B Jinnai, S Fukami, H Ohno Applied Physics Letters 114 (1), 2019 | 24 | 2019 |
| Mechanism for low-etching resistance and surface roughness of ArF photoresist during plasma irradiation B Jinnai, K Koyama, K Kato, A Yasuda, H Momose, S Samukawa Journal of Applied Physics 105 (5), 2009 | 19 | 2009 |
| Temperature dependence of the energy barrier in X/1X nm shape-anisotropy magnetic tunnel junctions J Igarashi, B Jinnai, V Desbuis, S Mangin, S Fukami, H Ohno Applied Physics Letters 118 (1), 2021 | 16 | 2021 |
| Real-time monitoring of charge accumulation during pulse-time-modulated plasma H Ohtake, B Jinnai, Y Suzuki, S Soda, T Shimmura, S Samukawa Journal of Vacuum Science & Technology A 24 (6), 2172-2175, 2006 | 14 | 2006 |
| Hard-mask-through UV-light-induced damage to low-k film during plasma process for dual damascene N Matsunaga, H Okumura, B Jinnai, S Samukawa Japanese journal of applied physics 49 (4S), 04DB06, 2010 | 13 | 2010 |
| Scalability and wide temperature range operation of spin-orbit torque switching devices using Co/Pt multilayer nanowires B Jinnai, H Sato, S Fukami, H Ohno Applied Physics Letters 113 (21), 2018 | 12 | 2018 |
| Prediction of abnormal etching profile in high-aspect-ratio via/hole etching using on-wafer monitoring system H Ohtake, S Fukuda, B Jinnai, T Tatsumi, S Samukawa Japanese journal of applied physics 49 (4S), 04DB14, 2010 | 12 | 2010 |
| Mechanism of reducing line edge roughness in ArF photoresist by using CF3I plasma E Soda, S Kondo, S Saito, K Koyama, B Jinnai, S Samukawa Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2009 | 12 | 2009 |
| Plasma irradiation damages to magnetic tunneling junction devices T Mukai, B Jinnai, Y Fukumoto, N Ohshima, H Hada, S Samukawa Journal of Applied Physics 102 (7), 2007 | 12 | 2007 |
| Fast switching down to 3.5 ns in sub-5-nm magnetic tunnel junctions achieved by engineering relaxation time B Jinnai, J Igarashi, T Shinoda, K Watanabe, S Fukami, H Ohno 2021 IEEE International Electron Devices Meeting (IEDM), 1-4, 2021 | 11 | 2021 |
Hideo OhnoTohoku University在 riec.tohoku.ac.jp 的电子邮件经过验证
