| Transverse ultra-thin insulated gate bipolar transistor having high current density W Sun, J Zhu, S Xu, Q Qian, S Liu, S Lu, L Shi US Patent 9,240,469, 2016 | 167 | 2016 |
| A novel silicon-on-insulator lateral insulated-gate bipolar transistor with dual trenches for three-phase single chip inverter ICs W Sun, J Zhu, L Zhang, H Yu, Y Du, K Huang, S Lu, L Shi, Y Yi IEEE Electron Device Letters 36 (7), 693-695, 2015 | 41 | 2015 |
| Electrical characteristic study of an SOI-LIGBT with segmented trenches in the anode region J Zhu, L Zhang, W Sun, M Chen, F Zhou, M Zhao, L Shi, Y Gu, S Zhang IEEE Transactions on Electron Devices 63 (5), 2003-2008, 2016 | 40 | 2016 |
| Further study of the U-shaped channel SOI-LIGBT with enhanced current density for high-voltage monolithic ICs J Zhu, L Zhang, W Sun, Y Du, K Huang, M Chen, L Shi, Y Gu, S Zhang IEEE Transactions on Electron Devices 63 (3), 1161-1167, 2016 | 39 | 2016 |
| A high current density SOI-LIGBT with segmented trenches in the anode region for suppressing negative differential resistance regime L Zhang, J Zhu, W Sun, Y Du, H Yu, K Huang, L Shi 2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's …, 2015 | 39 | 2015 |
| High voltage thick SOI-LIGBT with high current density and latch-up immunity J Zhu, W Sun, L Zhang, Y Du, H Yu, K Huang, Y Gu, S Zhang, W Su 2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's …, 2015 | 31 | 2015 |
| A novel charge-imbalance termination for trench superjunction VDMOS Q Qian, W Sun, J Zhu, S Liu IEEE electron device letters 31 (12), 1434-1436, 2010 | 29 | 2010 |
| A capacitive-loaded level shift circuit for improving the noise immunity of high voltage gate drive IC Y Zhang, J Zhu, W Sun, Y Lu, L Gu, S Zhang, W Su 2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's …, 2015 | 27 | 2015 |
| A review of superjunction vertical diffused MOSFET J Chen, W Sun, L Zhang, J Zhu, Y Lin IETE Technical review 29 (1), 44-52, 2012 | 27 | 2012 |
| Noise immunity and its temperature characteristics study of the capacitive-loaded level shift circuit for high voltage gate drive IC J Zhu, Y Zhang, W Sun, Y Lu, L Shi, Y Gu, S Zhang IEEE Transactions on Industrial Electronics 65 (4), 3027-3034, 2017 | 24 | 2017 |
| Novel snapback-free reverse-conducting SOI-LIGBT with dual embedded diodes L Zhang, J Zhu, W Sun, M Chen, M Zhao, X Huang, J Chen, Y Qian, L Shi IEEE Transactions on Electron Devices 64 (3), 1187-1192, 2017 | 23 | 2017 |
| Failure analysis of superjunction VDMOS under UIS condition J Zhu, W Sun, Y Wu, S Lu, Y Yi IEEE Transactions on Device and Materials Reliability 14 (1), 523-528, 2013 | 21 | 2013 |
| A novel high-voltage interconnection structure with dual trenches for 500V SOI-LIGBT L Zhang, J Zhu, W Sun, M Chen, C Huang, F Zhou, Y Gu, S Zhang, W Su 2016 28th International Symposium on Power Semiconductor Devices and ICs …, 2016 | 19 | 2016 |
| 700V thin SOI-LIGBT with high current capability J Zhu, W Sun, Q Qian, L Cao, N He, S Zhang 2013 25th International Symposium on Power Semiconductor Devices & IC's …, 2013 | 19 | 2013 |
| An integrated bootstrap diode emulator for 600-V high voltage gate drive IC with P-Sub/P-Epi technology J Zhu, W Sun, Y Zhang, S Lu, L Shi, S Zhang, W Su IEEE Transactions on power electronics 31 (1), 518-523, 2015 | 18 | 2015 |
| A U-shaped channel SOI-LIGBT with dual trenches L Zhang, J Zhu, W Sun, M Zhao, J Chen, X Huang, D Ding, J Chen, L Shi IEEE Transactions on Electron Devices 64 (6), 2587-2591, 2017 | 17 | 2017 |
| Low-loss SOI-LIGBT with triple deep-oxide trenches L Zhang, J Zhu, M Zhao, S Liu, W Sun, L Shi IEEE Transactions on Electron Devices 64 (9), 3756-3761, 2017 | 16 | 2017 |
| Low-loss SOI-LIGBT with dual deep-oxide trenches L Zhang, J Zhu, W Sun, M Zhao, J Chen, X Huang, L Shi, J Chen, D Ding IEEE Transactions on Electron Devices 64 (8), 3282-3286, 2017 | 16 | 2017 |
| 500-V silicon-on-insulator lateral IGBT with W-shaped n-typed buffer and composite p-typed collectors L Zhang, J Zhu, J Ma, S Cao, A Li, Y Zou, S Li, W Sun, J Zhao, L Shi, Y Gu, ... IEEE Transactions on Electron Devices 66 (3), 1430-1434, 2019 | 15 | 2019 |
| Investigations of inhomogeneous reverse recovery behavior of the body diode in superjunction MOSFET Z Yang, J Zhu, X Tong, W Sun, F Bian, Y Tian, Y Zhu, P Ye, Z Li, B Hou 2017 29th International Symposium on Power Semiconductor Devices and IC's …, 2017 | 15 | 2017 |
Weifeng SUNProfessor,Southeast University在 seu.edu.cn 的电子邮件经过验证
Weifeng SUNProfessor,Southeast University在 seu.edu.cn 的电子邮件经过验证
Long ZHANGSoutheast University在 seu.edu.cn 的电子邮件经过验证