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Joseph R. Nasr
Joseph R. Nasr
ASMA
在 asm.com 的电子邮件经过验证
标题
引用次数
引用次数
年份
Mimicking Neurotransmitter Release in Chemical Synapses via Hysteresis Engineering in MoS2 Transistors
AJ Arnold, A Razavieh, JR Nasr, DS Schulman, CM Eichfeld, S Das
ACS nano 11 (3), 3110-3118, 2017
2642017
Mobility Deception in Nanoscale Transistors: An Untold Contact Story
JR Nasr, DS Schulman, A Sebastian, MW Horn, S Das
Advanced Materials 31 (2), 1806020, 2019
782019
Low-Power and Ultra-Thin MoS2 Photodetectors on Glass
JR Nasr, N Simonson, A Oberoi, MW Horn, JA Robinson, S Das
ACS nano 14 (11), 15440-15449, 2020
702020
Scalable BEOL compatible 2D tungsten diselenide
A Kozhakhmetov, JR Nasr, F Zhang, K Xu, NC Briggs, R Addou, ...
2D Materials 7 (1), 015029, 2019
562019
Scalable Substitutional Re‐Doping and its Impact on the Optical and Electronic Properties of Tungsten Diselenide
A Kozhakhmetov, B Schuler, AMZ Tan, KA Cochrane, JR Nasr, ...
Advanced Materials 32 (50), 2005159, 2020
462020
The Prospect of Two-Dimensional Heterostructures: A Review of Recent Breakthroughs
DS Schulman, AJ Arnold, A Razavieh, J Nasr, S Das
IEEE Nanotechnology Magazine 11 (2), 6-17, 2017
372017
Control of Phase in Tin Sulfide Thin Films Produced via RF-Sputtering of SnS2 Target with Post-deposition Annealing
RE Banai, JC Cordell, G Lindwall, NJ Tanen, SL Shang, JR Nasr, ZK Liu, ...
Journal of Electronic Materials 45 (1), 499-508, 2016
302016
Study on the Growth Parameters and the Electrical and Optical Behaviors of 2D Tungsten Disulfide
VK Singh, R Pendurthi, JR Nasr, H Mamgain, RS Tiwari, S Das, ...
ACS Applied Materials & Interfaces 12 (14), 16576-16583, 2020
182020
Seamless Fabrication and Threshold Engineering in Monolayer MoS2 Dual‐Gated Transistors via Hydrogen Silsesquioxane
JR Nasr, S Das
Advanced Electronic Materials 5 (4), 1800888, 2019
172019
Low-temperature metalorganic chemical vapor deposition of molybdenum disulfide on multicomponent glass substrates
NA Simonson, JR Nasr, S Subramanian, B Jariwala, R Zhao, S Das, ...
FlatChem 11, 32-37, 2018
162018
Unveiling the electrical and photo-physical properties of intrinsic n-type 2D WSe2 for high performance field-effect transistors
S Rai, VK Singh, R Pendurthi, JR Nasr, S Das, A Srivastava
Journal of Applied Physics 131 (9), 094301, 2022
82022
Mask-free patterning and selective CVD-growth of 2D-TMDCs semiconductors
D Alameri, JR Nasr, D Karbach, Y Liu, R Divan, S Das, I Kuljanishvili
Semiconductor Science and Technology 34 (8), 085010, 2019
62019
Pd and Au Contacts to SnS: Thermodynamic Predictions and Annealing Study
RL Gurunathan, J Nasr, JJ Cordell, RA Banai, M Abraham, KA Cooley, ...
Journal of Electronic Materials 45 (12), 6300-6304, 2016
42016
Phase Control of RF Sputtered SnSx with Post-Deposition Annealing for a Pseudo-Homojunction Photovoltaic Device
JR Nasr, JJ Cordell, RL Gurunathan, JRS Brownson, MW Horn
Journal of Electronic Materials 46 (2), 1215-1222, 2017
12017
Fabrication, Characterization, and Benchmarking of Top-Gated Field Effect Transistors Based on Exfoliated and Low-Temperature Metal-Organic Chemical Vapor Deposition Grown MoS2 …
JR Nasr
2020
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