| A review of Ga2O3 materials, processing, and devices SJ Pearton, J Yang, PH Cary, F Ren, J Kim, MJ Tadjer, MA Mastro Applied Physics Reviews 5 (1), 2018 | 2407 | 2018 |
| 2300V reverse breakdown voltage Ga2O3 Schottky rectifiers J Yang, F Ren, M Tadjer, SJ Pearton, A Kuramata ECS Journal of Solid State Science and Technology 7 (5), Q92, 2018 | 226 | 2018 |
| Radiation damage effects in Ga 2 O 3 materials and devices J Kim, SJ Pearton, C Fares, J Yang, F Ren, S Kim, AY Polyakov Journal of Materials Chemistry C 7 (1), 10-24, 2019 | 217 | 2019 |
| High Breakdown Voltage (−201) -Ga2O3 Schottky Rectifiers J Yang, S Ahn, F Ren, SJ Pearton, S Jang, A Kuramata IEEE Electron Device Letters 38 (7), 906-909, 2017 | 212 | 2017 |
| High reverse breakdown voltage Schottky rectifiers without edge termination on Ga2O3 J Yang, S Ahn, F Ren, SJ Pearton, S Jang, J Kim, A Kuramata Applied Physics Letters 110 (19), 2017 | 202 | 2017 |
| Point defect induced degradation of electrical properties of Ga2O3 by 10 MeV proton damage AY Polyakov, NB Smirnov, IV Shchemerov, EB Yakimov, J Yang, F Ren, ... Applied Physics Letters 112 (3), 2018 | 121 | 2018 |
| Defects responsible for charge carrier removal and correlation with deep level introduction in irradiated β-Ga2O3 AY Polyakov, NB Smirnov, IV Shchemerov, EB Yakimov, SJ Pearton, ... Applied Physics Letters 113 (9), 2018 | 96 | 2018 |
| Ga2O3 Schottky rectifiers with 1 ampere forward current, 650 V reverse breakdown and 26.5 MW. cm-2 figure-of-merit J Yang, F Ren, M Tadjer, SJ Pearton, A Kuramata AIP Advances 8 (5), 2018 | 90 | 2018 |
| Effect of 1.5 MeV electron irradiation on β-Ga2O3 carrier lifetime and diffusion length J Lee, E Flitsiyan, L Chernyak, J Yang, F Ren, SJ Pearton, B Meyler, ... Applied Physics Letters 112 (8), 2018 | 84 | 2018 |
| 1.5 MeV electron irradiation damage in β-Ga2O3 vertical rectifiers J Yang, F Ren, SJ Pearton, G Yang, J Kim, A Kuramata Journal of Vacuum Science & Technology B 35 (3), 2017 | 84 | 2017 |
| Effect of surface treatments on electrical properties of β-Ga2O3 J Yang, Z Sparks, F Ren, SJ Pearton, M Tadjer Journal of Vacuum Science & Technology B 36 (6), 2018 | 78 | 2018 |
| Annealing of dry etch damage in metallized and bare (-201) Ga2O3 J Yang, F Ren, R Khanna, K Bevlin, D Geerpuram, LC Tung, J Lin, ... Journal of Vacuum Science & Technology B 35 (5), 2017 | 75 | 2017 |
| A comparative study of wet etching and contacts on (2¯ 01) and (010) oriented β-Ga2O3 S Jang, S Jung, K Beers, J Yang, F Ren, A Kuramata, SJ Pearton, KH Baik Journal of Alloys and Compounds 731, 118-125, 2018 | 70 | 2018 |
| Inductively coupled plasma etch damage in (-201) Ga2O3 Schottky diodes J Yang, S Ahn, F Ren, R Khanna, K Bevlin, D Geerpuram, SJ Pearton, ... Applied Physics Letters 110 (14), 2017 | 70 | 2017 |
| Vertical geometry 33.2 A, 4.8 MW cm2 Ga2O3 field-plated Schottky rectifier arrays J Yang, M Xian, P Carey, C Fares, J Partain, F Ren, M Tadjer, E Anber, ... Applied physics letters 114 (23), 2019 | 67 | 2019 |
| Diffusion length of non-equilibrium minority charge carriers in β-Ga2O3 measured by electron beam induced current EB Yakimov, AY Polyakov, NB Smirnov, IV Shchemerov, J Yang, F Ren, ... Journal of Applied Physics 123 (18), 2018 | 66 | 2018 |
| Improvement of Ohmic contacts on Ga2O3 through use of ITO-interlayers PH Carey, J Yang, F Ren, DC Hays, SJ Pearton, A Kuramata, ... Journal of Vacuum Science & Technology B 35 (6), 2017 | 63 | 2017 |
| Ohmic contacts on n-type β-Ga2O3 using AZO/Ti/Au PH Carey, J Yang, F Ren, DC Hays, SJ Pearton, S Jang, A Kuramata, ... AIP Advances 7 (9), 2017 | 59 | 2017 |
| Vertical Geometry, 2-A Forward Current Ga2O3Schottky Rectifiers on Bulk Ga2O3Substrates J Yang, F Ren, SJ Pearton, A Kuramata IEEE Transactions on Electron Devices 65 (7), 2790-2796, 2018 | 56 | 2018 |
| Dynamic Switching Characteristics of 1 A Forward Current -Ga2O3 Rectifiers J Yang, F Ren, YT Chen, YT Liao, CW Chang, J Lin, MJ Tadjer, ... IEEE Journal of the Electron Devices Society 7, 57-61, 2018 | 55 | 2018 |
Stephen PeartonProfessor of Materials Science and Engineering, University of Florida在 mse.ufl.edu 的电子邮件经过验证
