| Two dimensional V2O3 and its experimental feasibility as robust room-temperature magnetic Chern insulator S Mellaerts, R Meng, M Menghini, V Afanasiev, JW Seo, M Houssa, ... npj 2D Materials and Applications 5 (1), 65, 2021 | 15 | 2021 |
| Efficient direct band-gap transition in germanium by three-dimensional strain S Mellaerts, V Afanas’ ev, JW Seo, M Houssa, JP Locquet ACS Applied Materials & Interfaces 13 (26), 30941-30949, 2021 | 14 | 2021 |
| Quarter-filled Kane-Mele Hubbard model: Dirac half-metals S Mellaerts, R Meng, V Afanasiev, JW Seo, M Houssa, JP Locquet Physical Review B 103 (15), 2021 | 10 | 2021 |
| Origin of supertetragonality in BaTiO3 S Mellaerts, JW Seo, V Afanas'ev, M Houssa, JP Locquet Physical Review Materials 6 (6), 2022 | 7 | 2022 |
| Raman spectroscopy and phonon dynamics in strained WF Hsu, S Mellaerts, C Bellani, P Homm, N Uchida, M Menghini, ... Physical Review Materials 7 (7), 074606, 2023 | 6 | 2023 |
| Coherent control of the orbital occupation driving the insulator-to-metal Mott transition in P Franceschini, VR Policht, A Milloch, A Ronchi, S Mor, S Mellaerts, ... Physical Review B 107 (16), L161110, 2023 | 3 | 2023 |
| Mott resistive switching initiated by topological defects A Milloch, I Figueruelo-Campanero, WF Hsu, S Mor, S Mellaerts, ... Nature Communications 15 (1), 9414, 2024 | 1 | 2024 |
| The third dimension of epitaxial oxides S Mellaerts, JP Locquet, JW Seo, M Houssa | | 2024 |
| Epitaxial oxides S Mellaerts, JP Locquet, M Houssa, JW Seo | | 2024 |
| Mott resistive switching initiated by topological defects C Giannetti, A Milloch, I Figueruelo-Campanero, WF Hsu, S Mor, ... | | 2024 |
| Confinement-Induced Isosymmetric Metal–Insulator Transition in Ultrathin Epitaxial V2O3 Films S Mellaerts, C Bellani, WF Hsu, A Binetti, K Schouteden, ... ACS Applied Materials & Interfaces, 2024 | | 2024 |
| Topological phases in two-dimensional transition metal halides and oxides M Houssa, R Meng, S Mellaerts, E Akhoundi, A Afzalian, G Pourtois, ... 2023 IEEE Nanotechnology Materials and Devices Conference (NMDC), 107-108, 2023 | | 2023 |
| Mott physics in corundum-based superlattices S Mellaerts 53rd IEEE SISC 2022, Date: 2022/12/07-2022/12/10, Location: San Diego, US, 2022 | | 2022 |
| Intermediate phase of V₂O₃ at low-temperature phase transition WF Hsu, S Mellaerts, M Menghini, J Rubio Zuazo, J López Sánchez, ... 53rd IEEE Semiconductor Interface Specialists Conference 2022, Date: 2022/12 …, 2022 | | 2022 |
| First-order isosymmetric phase transitions S Mellaerts, JW Seo, V Afanasiev, M Houssa, JP Locquet EMRS Fall 2022, Location: Warsaw, 2022 | | 2022 |
| A dimensional crossover to a Mott insulator in V2O3 ultrathin films S Mellaerts, C Bellani, WF Hsu, K Schouteden, M Recaman Payo, JW Seo, ... 52nd IEEE Semiconductor Interface Specialists Conference 2021, Date: 2021/12 …, 2021 | | 2021 |
| Topological effects in 2D strongly correlated electron systems S Mellaerts KU Leuven, 2020 | | 2020 |
Locquet Jean-PierreProfessor, Katholieke Universiteit Leuven在 kuleuven.be 的电子邮件经过验证
