| Enhancement-Mode Ga2O3Vertical Transistors With Breakdown Voltage >1 kV Z Hu, K Nomoto, W Li, N Tanen, K Sasaki, A Kuramata, T Nakamura, ... IEEE Electron Device Letters 39 (6), 869-872, 2018 | 300 | 2018 |
| Field-Plated Ga2O3 Trench Schottky Barrier Diodes With a BV2/ of up to 0.95 GW/cm2 W Li, K Nomoto, Z Hu, D Jena, HG Xing IEEE Electron Device Letters 41 (1), 107-110, 2019 | 254 | 2019 |
| 1.9-kV AlGaN/GaN lateral Schottky barrier diodes on silicon M Zhu, B Song, M Qi, Z Hu, K Nomoto, X Yan, Y Cao, W Johnson, E Kohn, ... IEEE Electron Device Letters 36 (4), 375-377, 2015 | 200 | 2015 |
| 1.7-kV and 0.55- GaN p-n Diodes on Bulk GaN Substrates With Avalanche Capability K Nomoto, B Song, Z Hu, M Zhu, M Qi, N Kaneda, T Mishima, T Nakamura, ... IEEE Electron Device Letters 37 (2), 161-164, 2015 | 197 | 2015 |
| Near unity ideality factor and Shockley-Read-Hall lifetime in GaN-on-GaN pn diodes with avalanche breakdown Z Hu, K Nomoto, B Song, M Zhu, M Qi, M Pan, X Gao, V Protasenko, ... Applied Physics Letters 107 (24), 2015 | 194 | 2015 |
| Breakdown mechanism in 1 kA/cm2 and 960 V E-mode β-Ga2O3 vertical transistors Z Hu, K Nomoto, W Li, Z Zhang, N Tanen, QT Thieu, K Sasaki, A Kuramata, ... Applied Physics Letters 113 (12), 2018 | 167 | 2018 |
| 1230 V β-Ga2O3 trench Schottky barrier diodes with an ultra-low leakage current of< 1 μA/cm2 W Li, Z Hu, K Nomoto, Z Zhang, JY Hsu, QT Thieu, K Sasaki, A Kuramata, ... Applied Physics Letters 113 (20), 2018 | 151 | 2018 |
| Over 3.0Figure-of-Merit GaN p-n Junction Diodes on Free-Standing GaN Substrates Y Hatakeyama, K Nomoto, N Kaneda, T Kawano, T Mishima, T Nakamura IEEE electron device letters 32 (12), 1674-1676, 2011 | 146 | 2011 |
| High-breakdown-voltage and low-specific-on-resistance GaN p–n junction diodes on free-standing GaN substrates fabricated through low-damage field-plate process Y Hatakeyama, K Nomoto, A Terano, N Kaneda, T Tsuchiya, T Mishima, ... Japanese Journal of Applied Physics 52 (2R), 028007, 2013 | 130 | 2013 |
| Near-ideal reverse leakage current and practical maximum electric field in β-Ga2O3 Schottky barrier diodes W Li, D Saraswat, Y Long, K Nomoto, D Jena, HG Xing Applied Physics Letters 116 (19), 2020 | 125 | 2020 |
| High breakdown voltage in RF AlN/GaN/AlN quantum well HEMTs A Hickman, R Chaudhuri, SJ Bader, K Nomoto, K Lee, HG Xing, D Jena IEEE Electron Device Letters 40 (8), 1293-1296, 2019 | 112 | 2019 |
| 2.44 kV Ga2O3 vertical trench Schottky barrier diodes with very low reverse leakage current W Li, Z Hu, K Nomoto, R Jinno, Z Zhang, TQ Tu, K Sasaki, A Kuramata, ... 2018 IEEE International Electron Devices Meeting (IEDM), 8.5. 1-8.5. 4, 2018 | 108 | 2018 |
| Single and multi-fin normally-off Ga2O3 vertical transistors with a breakdown voltage over 2.6 kV W Li, K Nomoto, Z Hu, T Nakamura, D Jena, HG Xing San Francisco, CA, 15.4, 2019 | 99 | 2019 |
| Design and realization of GaN trench junction-barrier-Schottky-diodes W Li, K Nomoto, M Pilla, M Pan, X Gao, D Jena, HG Xing IEEE Transactions on Electron Devices 64 (4), 1635-1641, 2017 | 98 | 2017 |
| Over 1.0 kV GaN p–n junction diodes on free‐standing GaN substrates K Nomoto, Y Hatakeyama, H Katayose, N Kaneda, T Mishima, ... physica status solidi (a) 208 (7), 1535-1537, 2011 | 95 | 2011 |
| GaN HEMTs on Si with regrown contacts and cutoff/maximum oscillation frequencies of 250/204 GHz L Li, K Nomoto, M Pan, W Li, A Hickman, J Miller, K Lee, Z Hu, SJ Bader, ... IEEE Electron Device Letters 41 (5), 689-692, 2020 | 93 | 2020 |
| Gate-recessed E-mode p-channel HFET with high on-current based on GaN/AlN 2D hole gas SJ Bader, R Chaudhuri, K Nomoto, A Hickman, Z Chen, HW Then, ... IEEE Electron Device Letters 39 (12), 1848-1851, 2018 | 83 | 2018 |
| GaN-on-GaN pn power diodes with 3.48 kV and 0.95 mΩ-cm2: A record high figure-of-merit of 12.8 GW/cm2 K Nomoto, Z Hu, B Song, M Zhu, M Qi, R Yan, V Protasenko, E Imhoff, ... 2015 IEEE international electron devices meeting (IEDM), 9.7. 1-9.7. 4, 2015 | 78 | 2015 |
| Fin-channel orientation dependence of forward conduction in kV-class Ga2O3 trench Schottky barrier diodes W Li, K Nomoto, Z Hu, D Jena, HG Xing Applied Physics Express 12 (6), 061007, 2019 | 77 | 2019 |
| 1.1-kV vertical GaN pn diodes with p-GaN regrown by molecular beam epitaxy Z Hu, K Nomoto, M Qi, W Li, M Zhu, X Gao, D Jena, HG Xing IEEE Electron Device Letters 38 (8), 1071-1074, 2017 | 76 | 2017 |
Debdeep JenaCornell University在 cornell.edu 的电子邮件经过验证
