| Electronic decoupling of an epitaxial graphene monolayer by gold intercalation I Gierz, T Suzuki, RT Weitz, DS Lee, B Krauss, C Riedl, U Starke, ... Physical Review B—Condensed Matter and Materials Physics 81 (23), 235408, 2010 | 329 | 2010 |
| Silicon surface with giant spin splitting I Gierz, T Suzuki, E Frantzeskakis, S Pons, S Ostanin, A Ernst, J Henk, ... Physical review letters 103 (4), 046803, 2009 | 245 | 2009 |
| Change of InAs/GaAs quantum dot shape and composition during capping H Eisele, A Lenz, R Heitz, R Timm, M Dähne, Y Temko, T Suzuki, K Jacobi Journal of Applied Physics 104 (12), 2008 | 135 | 2008 |
| Shape transition of InAs quantum dots on GaAs (001) MC Xu, Y Temko, T Suzuki, K Jacobi Journal of applied physics 98 (8), 2005 | 71 | 2005 |
| Substrate effect on supramolecular self-assembly: from semiconductors to metals T Suzuki, T Lutz, D Payer, N Lin, SL Tait, G Costantini, K Kern Physical Chemistry Chemical Physics 11 (30), 6498-6504, 2009 | 56 | 2009 |
| Fabrication of a single layer graphene by copper intercalation on a SiC (0001) surface K Yagyu, T Tajiri, A Kohno, K Takahashi, H Tochihara, H Tomokage, ... Applied Physics Letters 104 (5), 2014 | 54 | 2014 |
| Growth mode and atomic structure of MnSi thin films on Si (111) B Geisler, P Kratzer, T Suzuki, T Lutz, G Costantini, K Kern Physical Review B—Condensed Matter and Materials Physics 86 (11), 115428, 2012 | 48 | 2012 |
| Shape and growth of InAs quantum dots on GaAs (113) A Y Temko, T Suzuki, K Jacobi Applied physics letters 82 (13), 2142-2144, 2003 | 48 | 2003 |
| REM study of high index Si (5 5 12) flat surfaces T Suzuki, H Minoda, Y Tanishiro, K Yagi Surface science 348 (3), 335-343, 1996 | 43 | 1996 |
| REM observations of the birth stage of the flat facets on an inner cylindrical silicon surface T Suzuki, JJ Métois, K Yagi Surface science 339 (1-2), 105-113, 1995 | 41 | 1995 |
| REM observations of Si (hhk) surfaces and their vicinal surfaces T Suzuki, Y Tanishiro, H Minoda, K Yagi, M Suzuki Surface science 298 (2-3), 473-477, 1993 | 40 | 1993 |
| InAs quantum dots grown on the and surfaces: A comparative STM study Y Temko, T Suzuki, P Kratzer, K Jacobi Physical Review B 68 (16), 165310, 2003 | 35 | 2003 |
| The chemisorption of pentacene on Si (0 0 1)-2× 1 T Suzuki, DC Sorescu, JT Yates Jr Surface science 600 (23), 5092-5103, 2006 | 33 | 2006 |
| Electron standing-wave observation in the Pd overlayer on Au (111) and Cu (111) surfaces by scanning tunneling microscopy T Suzuki, Y Hasegawa, ZQ Li, K Ohno, Y Kawazoe, T Sakurai Physical Review B 64 (8), 081403, 2001 | 31 | 2001 |
| Neutralization of an epitaxial graphene grown on a SiC (0001) by means of palladium intercalation K Yagyu, K Takahashi, H Tochihara, H Tomokage, T Suzuki Applied Physics Letters 110 (13), 2017 | 30 | 2017 |
| Au adsorption induced faceting and phase transitions of facet planes on the Si [110] zone studied by UHV-REM K Aoki, T Suzuki, H Minoda, Y Tanishiro, K Yagi Surface science 408 (1-3), 101-111, 1998 | 29 | 1998 |
| Shape, size, and number density of InAs quantum dots grown on the GaAs (1¯ 1¯ 3¯) B surface at various temperatures T Suzuki, Y Temko, K Jacobi Physical Review B 67 (4), 045315, 2003 | 28 | 2003 |
| Shape of InAs quantum dots grown on the GaAs B surface T Suzuki, Y Temko, K Jacobi Applied physics letters 80 (25), 4744-4746, 2002 | 28 | 2002 |
| On the location of InAs quantum dots on GaAs (0 0 1) MC Xu, Y Temko, T Suzuki, K Jacobi Surface science 589 (1-3), 91-97, 2005 | 27 | 2005 |
| STM studies of Si (5 5 12) 2× 1 surfaces T Suzuki, H Minoda, Y Tanishiro, K Yagi, T Sueyoshi, T Sato, M Iwatsuki Surface science 357, 522-526, 1996 | 24 | 1996 |
