Indirect Auger recombination as a cause of efficiency droop in nitride light-emitting diodes E Kioupakis, P Rinke, KT Delaney, CG Van de Walle Applied Physics Letters 98 (16), 2011 | 612 | 2011 |
Anisotropic spin transport and strong visible-light absorbance in few-layer SnSe and GeSe G Shi, E Kioupakis Nano letters 15 (10), 6926-6931, 2015 | 329 | 2015 |
Electrochemical Window of the Li-Ion Solid Electrolyte Li7La3Zr2O12 T Thompson, S Yu, L Williams, RD Schmidt, R Garcia-Mendez, ... ACS Energy Letters 2 (2), 462-468, 2017 | 319 | 2017 |
Phase Stability and Transport Mechanisms in Antiperovskite Li3OCl and Li3OBr Superionic Conductors A Emly, E Kioupakis, A Van der Ven Chemistry of Materials 25 (23), 4663-4670, 2013 | 244 | 2013 |
Interplay of polarization fields and Auger recombination in the efficiency droop of nitride light-emitting diodes E Kioupakis, Q Yan, CG Van de Walle Applied Physics Letters 101 (23), 2012 | 213 | 2012 |
Phonon-assisted optical absorption in silicon from first principles J Noffsinger, E Kioupakis, CG Van de Walle, SG Louie, ML Cohen Physical review letters 108 (16), 167402, 2012 | 198 | 2012 |
First-principles optical spectra for F centers in MgO P Rinke, A Schleife, E Kioupakis, A Janotti, C Rödl, F Bechstedt, ... Physical review letters 108 (12), 126404, 2012 | 192 | 2012 |
Electronic and optical properties of two-dimensional GaN from first-principles N Sanders, D Bayerl, G Shi, KA Mengle, E Kioupakis Nano letters 17 (12), 7345-7349, 2017 | 179 | 2017 |
Quasiparticle band structures and thermoelectric transport properties of p-type SnSe G Shi, E Kioupakis Journal of Applied Physics 117 (6), 2015 | 177 | 2015 |
Tuning ionic transport in memristive devices by graphene with engineered nanopores J Lee, C Du, K Sun, E Kioupakis, WD Lu Acs Nano 10 (3), 3571-3579, 2016 | 159 | 2016 |
Free-carrier absorption in nitrides from first principles E Kioupakis, P Rinke, A Schleife, F Bechstedt, CG Van de Walle Physical Review B 81 (24), 241201, 2010 | 157 | 2010 |
Temperature and carrier-density dependence of Auger and radiative recombination in nitride optoelectronic devices E Kioupakis, Q Yan, D Steiauf, CG Van de Walle New Journal of Physics 15 (12), 125006, 2013 | 154 | 2013 |
Quasiparticle effects in the bulk and surface-state bands of Bi 2 Se 3 and Bi 2 Te 3 topological insulators OV Yazyev, E Kioupakis, JE Moore, SG Louie Physical Review B 85 (16), 161101, 2012 | 143 | 2012 |
Fundamental limits on optical transparency of transparent conducting oxides: Free-carrier absorption in SnO2 H Peelaers, E Kioupakis, CG Van de Walle Applied Physics Letters 100 (1), 2012 | 129 | 2012 |
Spatially resolved electronic and vibronic properties of single diamondoid molecules Y Wang, E Kioupakis, X Lu, D Wegner, R Yamachika, JE Dahl, ... Nature Materials 7 (1), 38-42, 2008 | 110 | 2008 |
First-principles calculations of indirect Auger recombination in nitride semiconductors E Kioupakis, D Steiauf, P Rinke, KT Delaney, CG Van de Walle Physical Review B 92 (3), 035207, 2015 | 106 | 2015 |
Protecting the properties of monolayer MoS2 on silicon based substrates with an atomically thin buffer MKL Man, S Deckoff-Jones, A Winchester, G Shi, G Gupta, AD Mohite, ... Scientific reports 6 (1), 20890, 2016 | 103 | 2016 |
Deep ultraviolet emission from ultra-thin GaN/AlN heterostructures D Bayerl, SM Islam, CM Jones, V Protasenko, D Jena, E Kioupakis Applied Physics Letters 109 (24), 2016 | 96 | 2016 |
Charge transition of oxygen vacancies during resistive switching in oxide-based RRAM J Lee, W Schell, X Zhu, E Kioupakis, WD Lu ACS applied materials & interfaces 11 (12), 11579-11586, 2019 | 95 | 2019 |
Determination of internal loss in nitride lasers from first principles E Kioupakis, P Rinke, CG Van de Walle Applied physics express 3 (8), 082101, 2010 | 88 | 2010 |