| Artificial synapses based on multiterminal memtransistors for neuromorphic application L Wang, W Liao, SL Wong, ZG Yu, S Li, YF Lim, X Feng, WC Tan, ... Advanced Functional Materials 29 (25), 1901106, 2019 | 232 | 2019 |
| A Fully Printed Flexible MoS2 Memristive Artificial Synapse with Femtojoule Switching Energy X Feng, Y Li, L Wang, S Chen, ZG Yu, WC Tan, N Macadam, G Hu, ... Advanced Electronic Materials 5 (12), 1900740, 2019 | 181 | 2019 |
| 2D photovoltaic devices: progress and prospects L Wang, L Huang, WC Tan, X Feng, L Chen, X Huang, KW Ang Small Methods 2 (3), 1700294, 2018 | 160 | 2018 |
| Few‐layer black phosphorus carbide field‐effect transistor via carbon doping WC Tan, Y Cai, RJ Ng, L Huang, X Feng, G Zhang, YW Zhang, CA Nijhuis, ... Advanced Materials 29 (24), 1700503, 2017 | 146 | 2017 |
| Impact and Origin of Interface States in MOS Capacitor with Monolayer MoS2 and HfO2 High-k Dielectric P Xia, X Feng, RJ Ng, S Wang, D Chi, C Li, Z He, X Liu, KW Ang Scientific reports 7 (1), 40669, 2017 | 118 | 2017 |
| Self-selective multi-terminal memtransistor crossbar array for in-memory computing X Feng, S Li, SL Wong, S Tong, L Chen, P Zhang, L Wang, X Fong, D Chi, ... ACS nano 15 (1), 1764-1774, 2021 | 97 | 2021 |
| High mobility anisotropic black phosphorus nanoribbon field‐effect transistor X Feng, X Huang, L Chen, WC Tan, L Wang, KW Ang Advanced Functional Materials 28 (28), 1801524, 2018 | 93 | 2018 |
| A van der Waals Synaptic Transistor Based on Ferroelectric Hf0.5Zr0.5O2 and 2D Tungsten Disulfide L Chen, L Wang, Y Peng, X Feng, S Sarkar, S Li, B Li, L Liu, K Han, ... Advanced Electronic Materials 6 (6), 2000057, 2020 | 80 | 2020 |
| An Electronic Synapse Based on 2D Ferroelectric CuInP2S6 B Li, S Li, H Wang, L Chen, L Liu, X Feng, Y Li, J Chen, X Gong, KW Ang Advanced Electronic Materials 6 (12), 2000760, 2020 | 74 | 2020 |
| 2D photonic memristor beyond graphene: progress and prospects X Feng, X Liu, KW Ang Nanophotonics 9 (7), 1579-1599, 2020 | 72 | 2020 |
| Black phosphorus carbide as a tunable anisotropic plasmonic metasurface X Huang, Y Cai, X Feng, WC Tan, DMN Hasan, L Chen, N Chen, L Wang, ... ACS photonics 5 (8), 3116-3123, 2018 | 65 | 2018 |
| Electron-beam-irradiated rhenium disulfide memristors with low variability for neuromorphic computing S Li, B Li, X Feng, L Chen, Y Li, L Huang, X Fong, KW Ang npj 2D Materials and Applications 5 (1), 1, 2021 | 49 | 2021 |
| Black phosphorus based field effect transistors with simultaneously achieved near ideal subthreshold swing and high hole mobility at room temperature X Liu, KW Ang, W Yu, J He, X Feng, Q Liu, H Jiang, D Tang, J Wen, Y Lu, ... Scientific reports 6 (1), 24920, 2016 | 43 | 2016 |
| Fabry-Perot cavity enhanced light-matter interactions in two-dimensional van der Waals heterostructure X Huang, X Feng, L Chen, L Wang, WC Tan, L Huang, KW Ang Nano Energy 62, 667-673, 2019 | 38 | 2019 |
| Efficient and reliable surface charge transfer doping of black phosphorus via atomic layer deposited MgO toward high performance complementary circuits W Liao, L Wang, L Chen, W Wei, Z Zeng, X Feng, L Huang, WC Tan, ... Nanoscale 10 (36), 17007-17014, 2018 | 38 | 2018 |
| Anomalously enhanced thermal stability of phosphorene via metal adatom doping: An experimental and first-principles study X Feng, VV Kulish, P Wu, X Liu, KW Ang Nano Research 9, 2687-2695, 2016 | 38 | 2016 |
| Recent Advances in Black Phosphorus‐Based Electronic Devices WC Tan, L Wang, X Feng, L Chen, L Huang, X Huang, KW Ang Advanced Electronic Materials 5 (2), 1800666, 2019 | 34 | 2019 |
| Gigahertz integrated circuits based on complementary black phosphorus transistors L Chen, S Li, X Feng, L Wang, X Huang, BCK Tee, KW Ang Advanced Electronic Materials 4 (9), 1800274, 2018 | 27 | 2018 |
| Pronounced Photovoltaic Effect in Electrically Tunable Lateral Black‐Phosphorus Heterojunction Diode L Wang, L Huang, WC Tan, X Feng, L Chen, KW Ang Advanced Electronic Materials 4 (1), 1700442, 2018 | 27 | 2018 |
| Tunable black phosphorus heterojunction transistors for multifunctional optoelectronics L Wang, L Huang, WC Tan, X Feng, L Chen, KW Ang Nanoscale 10 (29), 14359-14367, 2018 | 26 | 2018 |
