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ting zhang (张婷)
ting zhang (张婷)
university of jinan
在 mail.sdu.edu.cn 的电子邮件经过验证
标题
引用次数
引用次数
年份
Broken-Gap Type-III Band Alignment in WTe2/HfS2 van der Waals Heterostructure
C Lei, Y Ma, X Xu, T Zhang, B Huang, Y Dai
The Journal of Physical Chemistry C 123 (37), 23089-23095, 2019
882019
Two-Dimensional Penta-BN2 with High Specific Capacity for Li-Ion Batteries
T Zhang, Y Ma, B Huang, Y Dai
ACS applied materials & interfaces 11 (6), 6104-6110, 2019
692019
Nonmetal-Atom-Doping-Induced Valley Polarization in Single-Layer Tl2O
X Xu, Y Ma, T Zhang, C Lei, B Huang, Y Dai
The Journal of Physical Chemistry Letters 10 (16), 4535-4541, 2019
632019
Prediction of two-dimensional antiferromagnetic ferroelasticity in an AgF 2 monolayer
X Xu, Y Ma, T Zhang, C Lei, B Huang, Y Dai
Nanoscale Horizons 5 (10), 1386-1393, 2020
602020
Prediction of two-dimensional PC 6 as a promising anode material for potassium-ion batteries
K Dou, Y Ma, T Zhang, B Huang, Y Dai
Physical Chemistry Chemical Physics 21 (47), 26212-26218, 2019
532019
Ferroelastic-ferroelectric multiferroics in a bilayer lattice
T Zhang, Y Liang, X Xu, B Huang, Y Dai, Y Ma
Physical Review B 103 (16), 165420, 2021
472021
Direction-control of anisotropic electronic behaviors via ferroelasticity in two-dimensional α-MPI (M= Zr, Hf)
T Zhang, Y Ma, L Yu, B Huang, Y Dai
Materials Horizons 6 (9), 1930-1937, 2019
452019
Valley-Contrasting Physics in Single-Layer CrSi2N4 and CrSi2P4
Y Liu, T Zhang, K Dou, W Du, R Peng, Y Dai, B Huang, Y Ma
The Journal of Physical Chemistry Letters 12 (34), 8341-8346, 2021
432021
Two-Dimensional Ferroelastic Semiconductors in Nb2SiTe4 and Nb2GeTe4 with Promising Electronic Properties
T Zhang, Y Ma, X Xu, C Lei, B Huang, Y Dai
The Journal of Physical Chemistry Letters 11 (2), 497-503, 2019
422019
Valley polarization in monolayer CrX2 (X= S, Se) with magnetically doping and proximity coupling
C Lei, Y Ma, T Zhang, X Xu, B Huang, Y Dai
New Journal of Physics 22 (3), 033002, 2020
352020
Layer-polarized anomalous Hall effects in valleytronic van der Waals bilayers
T Zhang, X Xu, B Huang, Y Dai, L Kou, Y Ma
Materials Horizons 10 (2), 483-490, 2023
342023
Intrinsic layer-polarized anomalous Hall effect in bilayer
R Peng, T Zhang, Z He, Q Wu, Y Dai, B Huang, Y Ma
Physical Review B 107 (8), 085411, 2023
312023
2D spontaneous valley polarization from inversion symmetric single-layer lattices
T Zhang, X Xu, B Huang, Y Dai, Y Ma
npj Computational Materials 8 (1), 64, 2022
312022
Nonvolatile Controlling Valleytronics by Ferroelectricity in 2H-VSe2/Sc2CO2 van der Waals Heterostructure
C Lei, X Xu, T Zhang, B Huang, Y Dai, Y Ma
The Journal of Physical Chemistry C 125 (4), 2802-2809, 2021
302021
Construction of diluted magnetic semiconductor to endow nonmagnetic semiconductor with spin-regulated photocatalytic performance
YS Wenqiang Gao, Xiaolei Zhao, Ting Zhang, Xiaowen Yu, Yandong Ma, Egon ...
Nano Energy 110, 108381, 2023
282023
Two-dimensional valleytronics in single-layer t-ZrNY (Y= Cl, Br) predicted from first principles
T Zhang, Y Ma, X Xu, C Lei, B Huang, Y Dai
The Journal of Physical Chemistry C 124 (37), 20598-20604, 2020
192020
In situ monitoring of the spatial distribution of oxygen vacancies and enhanced photocatalytic performance at the single-particle level
Y Zhang, Y Liu, T Zhang, X Gong, Z Wang, Y Liu, P Wang, H Cheng, Y Dai, ...
Nano Letters 23 (4), 1244-1251, 2023
132023
Defect-engineered three-dimensional vanadium diselenide microflowers/nanosheets on carbon cloth by chemical vapor deposition for high-performance hydrogen evolution reaction
C Miao, T Zhang, F Li, L Zhang, J Sun, D Liu, L Wu, H Wang, F Chen, ...
Nanotechnology 32 (26), 265402, 2021
132021
Spontaneous Valley Polarization and Electrical Control of Valley Physics in Single-Layer TcIrGe2S6
J Zhao, T Zhang, R Peng, Y Dai, B Huang, Y Ma
The Journal of Physical Chemistry Letters 13 (37), 8749-8754, 2022
122022
Intrinsic ferromagnetic triferroicity in bilayer T′-VTe2
T Zhang, X Xu, Y Dai, B Huang, Y Ma
Applied Physics Letters 120 (19), 2022
112022
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