Broken-Gap Type-III Band Alignment in WTe2/HfS2 van der Waals Heterostructure C Lei, Y Ma, X Xu, T Zhang, B Huang, Y Dai The Journal of Physical Chemistry C 123 (37), 23089-23095, 2019 | 88 | 2019 |
Two-Dimensional Penta-BN2 with High Specific Capacity for Li-Ion Batteries T Zhang, Y Ma, B Huang, Y Dai ACS applied materials & interfaces 11 (6), 6104-6110, 2019 | 69 | 2019 |
Nonmetal-Atom-Doping-Induced Valley Polarization in Single-Layer Tl2O X Xu, Y Ma, T Zhang, C Lei, B Huang, Y Dai The Journal of Physical Chemistry Letters 10 (16), 4535-4541, 2019 | 63 | 2019 |
Prediction of two-dimensional antiferromagnetic ferroelasticity in an AgF 2 monolayer X Xu, Y Ma, T Zhang, C Lei, B Huang, Y Dai Nanoscale Horizons 5 (10), 1386-1393, 2020 | 60 | 2020 |
Prediction of two-dimensional PC 6 as a promising anode material for potassium-ion batteries K Dou, Y Ma, T Zhang, B Huang, Y Dai Physical Chemistry Chemical Physics 21 (47), 26212-26218, 2019 | 53 | 2019 |
Ferroelastic-ferroelectric multiferroics in a bilayer lattice T Zhang, Y Liang, X Xu, B Huang, Y Dai, Y Ma Physical Review B 103 (16), 165420, 2021 | 47 | 2021 |
Direction-control of anisotropic electronic behaviors via ferroelasticity in two-dimensional α-MPI (M= Zr, Hf) T Zhang, Y Ma, L Yu, B Huang, Y Dai Materials Horizons 6 (9), 1930-1937, 2019 | 45 | 2019 |
Valley-Contrasting Physics in Single-Layer CrSi2N4 and CrSi2P4 Y Liu, T Zhang, K Dou, W Du, R Peng, Y Dai, B Huang, Y Ma The Journal of Physical Chemistry Letters 12 (34), 8341-8346, 2021 | 43 | 2021 |
Two-Dimensional Ferroelastic Semiconductors in Nb2SiTe4 and Nb2GeTe4 with Promising Electronic Properties T Zhang, Y Ma, X Xu, C Lei, B Huang, Y Dai The Journal of Physical Chemistry Letters 11 (2), 497-503, 2019 | 42 | 2019 |
Valley polarization in monolayer CrX2 (X= S, Se) with magnetically doping and proximity coupling C Lei, Y Ma, T Zhang, X Xu, B Huang, Y Dai New Journal of Physics 22 (3), 033002, 2020 | 35 | 2020 |
Layer-polarized anomalous Hall effects in valleytronic van der Waals bilayers T Zhang, X Xu, B Huang, Y Dai, L Kou, Y Ma Materials Horizons 10 (2), 483-490, 2023 | 34 | 2023 |
Intrinsic layer-polarized anomalous Hall effect in bilayer R Peng, T Zhang, Z He, Q Wu, Y Dai, B Huang, Y Ma Physical Review B 107 (8), 085411, 2023 | 31 | 2023 |
2D spontaneous valley polarization from inversion symmetric single-layer lattices T Zhang, X Xu, B Huang, Y Dai, Y Ma npj Computational Materials 8 (1), 64, 2022 | 31 | 2022 |
Nonvolatile Controlling Valleytronics by Ferroelectricity in 2H-VSe2/Sc2CO2 van der Waals Heterostructure C Lei, X Xu, T Zhang, B Huang, Y Dai, Y Ma The Journal of Physical Chemistry C 125 (4), 2802-2809, 2021 | 30 | 2021 |
Construction of diluted magnetic semiconductor to endow nonmagnetic semiconductor with spin-regulated photocatalytic performance YS Wenqiang Gao, Xiaolei Zhao, Ting Zhang, Xiaowen Yu, Yandong Ma, Egon ... Nano Energy 110, 108381, 2023 | 28 | 2023 |
Two-dimensional valleytronics in single-layer t-ZrNY (Y= Cl, Br) predicted from first principles T Zhang, Y Ma, X Xu, C Lei, B Huang, Y Dai The Journal of Physical Chemistry C 124 (37), 20598-20604, 2020 | 19 | 2020 |
In situ monitoring of the spatial distribution of oxygen vacancies and enhanced photocatalytic performance at the single-particle level Y Zhang, Y Liu, T Zhang, X Gong, Z Wang, Y Liu, P Wang, H Cheng, Y Dai, ... Nano Letters 23 (4), 1244-1251, 2023 | 13 | 2023 |
Defect-engineered three-dimensional vanadium diselenide microflowers/nanosheets on carbon cloth by chemical vapor deposition for high-performance hydrogen evolution reaction C Miao, T Zhang, F Li, L Zhang, J Sun, D Liu, L Wu, H Wang, F Chen, ... Nanotechnology 32 (26), 265402, 2021 | 13 | 2021 |
Spontaneous Valley Polarization and Electrical Control of Valley Physics in Single-Layer TcIrGe2S6 J Zhao, T Zhang, R Peng, Y Dai, B Huang, Y Ma The Journal of Physical Chemistry Letters 13 (37), 8749-8754, 2022 | 12 | 2022 |
Intrinsic ferromagnetic triferroicity in bilayer T′-VTe2 T Zhang, X Xu, Y Dai, B Huang, Y Ma Applied Physics Letters 120 (19), 2022 | 11 | 2022 |