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Meena Panchore
Meena Panchore
在 nitp.ac.in 的电子邮件经过验证
标题
引用次数
引用次数
年份
Low power and high speed CMOS comparator design using 0.18 μm technology
M Panchore, RS Gamad
International Journal of Electronic Engineering Research 2 (1), 71-77, 2010
472010
Dopingless ferroelectric tunnel FET architecture for the improvement of performance of dopingless n-channel tunnel FETs
A Lahgere, M Panchore, J Singh
Superlattices and Microstructures 96, 16-25, 2016
372016
Impact of channel hot carrier effect in junction-and doping-free devices and circuits
M Panchore, J Singh, SP Mohanty
IEEE Transactions on Electron Devices 63 (12), 5068-5071, 2016
272016
Performance investigation of GaSb/Si heterojunction based gate underlap and overlap vertical TFET biosensor
A Theja, M Panchore
IEEE Transactions on NanoBioscience 22 (2), 284-291, 2022
202022
3-D simulation of junction-and doping-free field-effect transistor under heavy ion irradiation
N Kamal, M Panchore, J Singh
IEEE Transactions on Device and Materials Reliability 18 (2), 173-179, 2018
202018
Dopingless-TFET leaky-integrated-fire (LIF) neuron for high-speed energy efficient applications
S Singh, M Panchore
IEEE transactions on nanotechnology 21, 110-117, 2022
172022
Compact behavioral modeling and time dependent performance degradation analysis of junction and doping free transistors
M Panchore, J Singh, SP Mohanty, E Kougianos
2016 IEEE international symposium on Nanoelectronic and information systems …, 2016
112016
Channel-hot-carrier degradation in the channel of junctionless transistors: a device-and circuit-level perspective
M Panchore, L Bramhane, J Singh
Journal of Computational Electronics 20 (3), 1196-1201, 2021
92021
Impact of work function engineering in charge plasma based bipolar devices
L Bramhane, S Salankar, M Gaikwad, M Panchore
Silicon, 1-5, 2022
82022
Realization of Boolean functions using heterojunction tunnel FETs
V Ambekar, M Panchore
Silicon 14 (11), 6467-6475, 2022
62022
Aging mechanism of p-type dopingless JLFET: NBTI and channel-hot-carrier stress
M Panchore, C Rajan
Transactions on Electrical and Electronic Materials 24 (2), 154-158, 2023
42023
Realization of high-speed logic functions using heterojunction vertical TFET
V Ambekar, M Panchore
Applied Physics A 129 (3), 166, 2023
42023
Impact of back gate bias on analog performance of dopingless transistor
R Kumar, M Panchore
Transactions on Electrical and Electronic Materials 24 (1), 115-121, 2023
42023
Impact of temporal variability on dopingless and junctionless FET based SRAM cells
M Panchore, K Cecil, J Singh
Silicon 13, 4527-4533, 2021
32021
Performance assessment of charge plasma based hetero‐structure VTFET biosensor for linearity enhancement
A Theja, M Panchore
International Journal of Numerical Modelling: Electronic Networks, Devices …, 2024
22024
Design of a CMOS Comparator for A/D Converter Application
M Panchore, RS Gamad, BC Nagar
International Journal of Computational Intelligence and Information Security …, 2010
22010
A paradigm shift in analog applications through reconfigurable FET
C Rajan, R Ghare, S Bhujade, M Panchore, B Neole
Microelectronics Journal 142, 106004, 2023
12023
Effect of ITC on Boolean functionality of n-type heterojunction vertical TFETs
V Ambekar, M Panchore
Microelectronics Journal 142, 105988, 2023
12023
Heterogenous Gate Dielectric DLTFET: Reliability Perspective Against Degradation Mechanisms
K Cecil, M Panchore, DP Samajdar
Transactions on Electrical and Electronic Materials, 1-6, 2022
12022
Comparative Performance and Reliability Analysis of Doping and Junction Free Devices with High-κ/Vacuum Gate Dielectric
R Kumar, M Panchore, L Bramhane, J Singh
Silicon 14 (9), 5035-5039, 2022
12022
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