| Effect of homogeneous broadening of optical gain on lasing spectra in self-assembled quantum dot lasers M Sugawara, K Mukai, Y Nakata, H Ishikawa, A Sakamoto Physical Review B 61 (11), 7595, 2000 | 398 | 2000 |
| Quantum-dot semiconductor optical amplifiers T Akiyama, M Sugawara, Y Arakawa Proceedings of the IEEE 95 (9), 1757-1766, 2007 | 300 | 2007 |
| Theory of optical signal amplification and processing by quantum-dot semiconductor optical amplifiers M Sugawara, H Ebe, N Hatori, M Ishida, Y Arakawa, T Akiyama, K Otsubo, ... Physical Review B 69 (23), 235332, 2004 | 291 | 2004 |
| Self-assembled InGaAs/GaAs quantum dots M Sugawara Semiconductor and Semimetals, 1999 | 266 | 1999 |
| Self-formed In0. 5Ga0. 5As quantum dots on GaAs substrates emitting at 1.3 µm K Mukai, N Ohtsuka, MSM Sugawara, SYS Yamazaki Japanese journal of applied physics 33 (12A), L1710, 1994 | 263 | 1994 |
| Theory of spontaneous-emission lifetime of Wannier excitons in mesoscopic semiconductor quantum disks M Sugawara Physical Review B 51 (16), 10743, 1995 | 257 | 1995 |
| An ultrawide-band semiconductor optical amplifier having an extremely high penalty-free output power of 23 dBm achieved with quantum dots T Akiyama, M Ekawa, M Sugawara, K Kawaguchi, H Sudo, A Kuramata, ... IEEE Photonics Technology Letters 17 (8), 1614-1616, 2005 | 223 | 2005 |
| Temperature-insensitive eye-opening under 10-Gb/s modulation of 1.3-µm p-doped quantum-dot lasers without current adjustments K Otsubo, N Hatori, M Ishida, S Okumura, T Akiyama, Y Nakata, H Ebe, ... Japanese Journal of Applied Physics 43 (8B), L1124, 2004 | 220 | 2004 |
| 1.3-μm CW lasing of InGaAs-GaAs quantum dots at room temperature with a threshold current of 8 mA K Mukai, Y Nakata, K Otsubo, M Sugawara, N Yokoyama, H Ishikawa IEEE Photonics Technology Letters 11 (10), 1205-1207, 1999 | 220 | 1999 |
| Effect of phonon bottleneck on quantum-dot laser performance M Sugawara, K Mukai, H Shoji Applied physics letters 71 (19), 2791-2793, 1997 | 218 | 1997 |
| Emission from discrete levels in self‐formed InGaAs/GaAs quantum dots by electric carrier injection: Influence of phonon bottleneck K Mukai, N Ohtsuka, H Shoji, M Sugawara Applied physics letters 68 (21), 3013-3015, 1996 | 208 | 1996 |
| Lasing at three-dimensionally quantum-confined sublevel of self-organized In/sub 0.5/Ga/sub 0.5/As quantum dots by current injection H Shoji, K Mukai, N Ohtsuka, M Sugawara, T Uchida, H Ishikawa IEEE Photonics Technology Letters 7 (12), 1385-1387, 1995 | 186 | 1995 |
| Modeling room-temperature lasing spectra of 1.3-μm self-assembled InAs∕ GaAs quantum-dot lasers: Homogeneous broadening of optical gain under current injection M Sugawara, N Hatori, H Ebe, M Ishida, Y Arakawa, T Akiyama, K Otsubo, ... Journal of Applied Physics 97 (4), 2005 | 181 | 2005 |
| Quantum-dot semiconductor optical amplifiers for high bit-rate signal processing over 40 Gbit/s M Sugawara, N Hatori, T Akiyama, Y Nakata, H Ishikawa Japanese Journal of Applied Physics 40 (5B), L488, 2001 | 170 | 2001 |
| Nonlinear gain dynamics in quantum-dot optical amplifiers and its application to optical communication devices T Akiyama, H Kuwatsuka, T Simoyama, Y Nakata, K Mukai, M Sugawara, ... IEEE Journal of Quantum Electronics 37 (8), 1059-1065, 2001 | 161 | 2001 |
| 1.3-/spl mu/m CW lasing characteristics of self-assembled InGaAs-GaAs quantum dots K Mukai, Y Nakata, K Otsubo, M Sugawara, N Yokoyama, H Ishikawa IEEE Journal of Quantum Electronics 36 (4), 472-478, 2000 | 151 | 2000 |
| Phonon bottleneck in self-formed quantum dots by electroluminescence and time-resolved photoluminescence K Mukai, N Ohtsuka, H Shoji, M Sugawara Physical Review B 54 (8), R5243, 1996 | 149 | 1996 |
| Symmetric highly efficient (/spl sim/0 dB) wavelength conversion based on four-wave mixing in quantum dot optical amplifiers T Akiyama, H Kuwatsuka, N Hatori, Y Nakata, H Ebe, M Sugawara IEEE Photonics Technology Letters 14 (8), 1139-1141, 2002 | 147 | 2002 |
| Temperature dependent lasing characteristics of multi-stacked quantum dot lasers H Shoji, Y Nakata, K Mukai, Y Sugiyama, M Sugawara, N Yokoyama, ... Applied physics letters 71 (2), 193-195, 1997 | 139 | 1997 |
| Conduction-band and valence-band structures in strained As/InP quantum wells on (001) InP substrates M Sugawara, N Okazaki, T Fujii, S Yamazaki Physical Review B 48 (11), 8102, 1993 | 121 | 1993 |
