| Recent progress on ZnO‐based metal‐semiconductor field‐effect transistors and their application in transparent integrated circuits H Frenzel, A Lajn, H Von Wenckstern, M Lorenz, F Schein, Z Zhang, ... Advanced Materials 22 (47), 5332-5349, 2010 | 185 | 2010 |
| Properties of reactively sputtered Ag, Au, Pd, and Pt Schottky contacts on n-type ZnO A Lajn, H Wenckstern, Z Zhang, C Czekalla, G Biehne, J Lenzner, ... Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2009 | 100 | 2009 |
| Structural and optical properties of (In, Ga) 2O3 thin films and characteristics of Schottky contacts thereon H Von Wenckstern, D Splith, M Purfürst, Z Zhang, C Kranert, S Müller, ... Semiconductor Science and Technology 30 (2), 024005, 2015 | 95 | 2015 |
| Continuous composition spread using pulsed-laser deposition with a single segmented target H von Wenckstern, Z Zhang, F Schmidt, J Lenzner, H Hochmuth, ... CrystEngComm 15 (46), 10020-10027, 2013 | 73 | 2013 |
| Mott variable-range hopping and weak antilocalization effect in heteroepitaxial NaIrO thin films M Jenderka, J Barzola-Quiquia, Z Zhang, H Frenzel, M Grundmann, ... Physical Review B—Condensed Matter and Materials Physics 88 (4), 045111, 2013 | 66 | 2013 |
| Visible-blind and solar-blind ultraviolet photodiodes based on (InxGa1− x) 2O3 Z Zhang, H von Wenckstern, J Lenzner, M Lorenz, M Grundmann Applied Physics Letters 108 (12), 2016 | 62 | 2016 |
| Wavelength selective metal-semiconductor-metal photodetectors based on (Mg, Zn) O-heterostructures Z Zhang, H von Wenckstern, M Schmidt, M Grundmann Applied Physics Letters 99 (8), 2011 | 56 | 2011 |
| Toward three-dimensional hybrid inorganic/organic optoelectronics based on GaN/oCVD-PEDOT structures L Krieg, F Meierhofer, S Gorny, S Leis, D Splith, Z Zhang, ... Nature communications 11 (1), 5092, 2020 | 38 | 2020 |
| Energy-selective multichannel ultraviolet photodiodes based on (Mg, Zn) O Z Zhang, H von Wenckstern, M Grundmann Applied Physics Letters 103 (17), 2013 | 31 | 2013 |
| Monolithic multichannel ultraviolet photodiodes based on (Mg, Zn) O thin films with continuous composition spreads Z Zhang, H von Wenckstern, M Grundmann IEEE Journal of Selected Topics in Quantum Electronics 20 (6), 106-111, 2014 | 23 | 2014 |
| Program FFlexCom—High frequency flexible bendable electronics for wireless communication systems T Meister, F Ellinger, JW Bartha, M Berroth, J Burghartz, M Claus, L Frey, ... 2017 IEEE international conference on microwaves, antennas, communications …, 2017 | 19 | 2017 |
| Full-swing, high-gain inverters based on ZnSnO JFETs and MESFETs O Lahr, Z Zhang, F Grotjahn, P Schlupp, S Vogt, H von Wenckstern, ... IEEE Transactions on Electron Devices 66 (8), 3376-3381, 2019 | 15 | 2019 |
| Controlled formation of Schottky diodes on n-doped ZnO layers by deposition of p-conductive polymer layers with oxidative chemical vapor deposition L Krieg, Z Zhang, D Splith, H von Wenckstern, M Grundmann, X Wang, ... Nano Express 1 (1), 010013, 2020 | 11 | 2020 |
| Interface charging effects in ferroelectric ZnO–BaTiO3 field‐effect transistor heterostructures P Schwinkendorf, M Lorenz, H Hochmuth, Z Zhang, M Grundmann physica status solidi (a) 211 (1), 166-172, 2014 | 11 | 2014 |
| Wavelength-selective ultraviolet (Mg, Zn) O photodiodes: Tuning of parallel composition gradients with oxygen pressure Z Zhang, H von Wenckstern, J Lenzner, M Grundmann Applied Physics Letters 108 (24), 2016 | 9 | 2016 |
| A continuous composition spread approach towards monolithic, wavelength-selective multichannel UV-photo-detector arrays H von Wenckstern, Z Zhang, J Lenzner, F Schmidt, M Grundmann MRS Online Proceedings Library (OPL) 1633, 123-129, 2014 | 6 | 2014 |
| Light beam induced current measurements on ZnO Schottky diodes and MESFETs H von Wenckstern, ZP Zhang, M Lorenz, C Czekalla, H Frenzel, A Lajn, ... MRS Online Proceedings Library (OPL) 1201, 1201-H04-02, 2009 | 5 | 2009 |
| Recent Progress on ZnO-Based Metal-Semiconductor Field-Effect Transistors and Their Application in Transparent Integrated Circuits (vol 22, pg 5332, 2010) H Frenzel, A Lajn, H von Wenckstern, M Lorenz, F Schein, ZP Zhang, ... Advanced Materials 23 (12), 1424-1424, 2011 | 3 | 2011 |
| Correction: Recent Progress on ZnO‐Based Metal‐Semiconductor Field‐Effect Transistors and Their Application in Transparent Integrated Circuits H Frenzel, A Lajn, H von Wenckstern, M Lorenz, F Schein, Z Zhang, ... Advanced Materials 23 (12), 1425-1425, 2011 | 2 | 2011 |
| Visible-blind and solar-blind ultraviolet photodiodes based on (In {sub x} Ga {sub 1− x}){sub 2} O {sub 3} Z Zhang, H Wenckstern, J Lenzner, M Lorenz, M Grundmann Applied Physics Letters 108 (12), 2016 | | 2016 |
Marius GrundmannUniversität Leipzig在 physik.uni-leipzig.de 的电子邮件经过验证
