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Paolo PAVAN
Paolo PAVAN
Professor of Electronics, Università di Modena e Reggio Emilia
在 unimore.it 的电子邮件经过验证
标题
引用次数
引用次数
年份
Flash memory cells-an overview
P Pavan, R Bez, P Olivo, E Zanoni
Proceedings of the IEEE 85 (8), 1248-1271, 1997
10711997
NROM: A novel localized trapping, 2-bit nonvolatile memory cell
B Eitan, P Pavan, I Bloom, E Aloni, A Frommer, D Finzi
IEEE Electron Device Letters 21 (11), 543-545, 2000
8812000
Recommended methods to study resistive switching devices
M Lanza, HSP Wong, E Pop, D Ielmini, D Strukov, BC Regan, L Larcher, ...
Advanced Electronic Materials 5 (1), 1800143, 2019
5822019
Can NROM, a 2 bit, trapping storage NVM cell, give a real challenge to floating gate cells?
B Eitan, P Pavan, I Bloom, E Aloni, A Frommer
SSDM 100, 522-524, 1999
2121999
Impact of programming charge distribution on threshold voltage and subthreshold slope of NROM memory cells
L Larcher, G Verzellesi, P Pavan, E Lusky, I Bloom, B Eitan
IEEE Transactions on Electron Devices 49 (11), 1939-1946, 2002
1482002
A Complete Statistical Investigation of RTN in HfO2-Based RRAM in High Resistive State
FM Puglisi, L Larcher, A Padovani, P Pavan
IEEE Transactions on Electron Devices 62 (8), 2606-2613, 2015
1272015
A solar energy harvesting circuit for low power applications
D Dondi, A Bertacchini, L Larcher, P Pavan, D Brunelli, L Benini
2008 IEEE International Conference on Sustainable Energy Technologies, 945-949, 2008
1202008
NROMTM––a new technology for non-volatile memory products
I Bloom, P Pavan, B Eitan
Solid-State Electronics 46 (11), 1757-1763, 2002
1112002
Carbon-doped GeTe: a promising material for phase-change memories
GB Beneventi, L Perniola, V Sousa, E Gourvest, S Maitrejean, JC Bastien, ...
Solid-State Electronics 65, 197-204, 2011
992011
Photovoltaic cell modeling for solar energy powered sensor networks
D Dondi, D Brunelli, L Benini, P Pavan, A Bertacchini, L Larcher
2007 2nd international workshop on advances in sensors and interface, 1-6, 2007
912007
An empirical model for RRAM resistance in low-and high-resistance states
FM Puglisi, L Larcher, G Bersuker, A Padovani, P Pavan
IEEE Electron Device Letters 34 (3), 387-389, 2013
882013
A Compact Model of Program Window in HfOx RRAM Devices for Conductive Filament Characteristics Analysis
L Larcher, FM Puglisi, P Pavan, A Padovani, L Vandelli, G Bersuker
IEEE Transactions on Electron Devices 61 (8), 2668-2673, 2014
872014
Floating gate devices: operation and compact modeling
P Pavan, L Larcher, A Marmiroli
Springer Science & Business Media, 2007
872007
Comprehensive physical modeling of forming and switching operations in HfO2 RRAM devices
L Vandelli, A Padovani, L Larcher, G Broglia, G Ori, M Montorsi, ...
2011 International Electron Devices Meeting, 17.5. 1-17.5. 4, 2011
862011
Charge Transport and Degradation in HfO2 and HfOx Dielectrics
A Padovani, L Larcher, G Bersuker, P Pavan
IEEE electron device letters 34 (5), 680-682, 2013
832013
Random telegraph noise in resistive random access memories: Compact modeling and advanced circuit design
FM Puglisi, N Zagni, L Larcher, P Pavan
IEEE Transactions on Electron Devices 65 (7), 2964-2972, 2018
802018
Analytical model for low-frequency noise in amorphous chalcogenide-based phase-change memory devices
G Betti Beneventi, A Calderoni, P Fantini, L Larcher, P Pavan
Journal of Applied Physics 106 (5), 2009
642009
Photovoltaic scavenging systems: Modeling and optimization
D Brunelli, D Dondi, A Bertacchini, L Larcher, P Pavan, L Benini
Microelectronics Journal 40 (9), 1337-1344, 2009
612009
A new compact DC model of floating gate memory cells without capacitive coupling coefficients
L Larcher, P Pavan, S Pietri, L Albani, A Marmiroli
IEEE Transactions on Electron Devices 49 (2), 301-307, 2002
582002
RTS noise characterization of HfOx RRAM in high resistive state
FM Puglisi, P Pavan, A Padovani, L Larcher, G Bersuker
Solid-State Electronics 84, 160-166, 2013
572013
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