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S. M. SALAHUDDIN
S. M. SALAHUDDIN
在 intel.com 的电子邮件经过验证
标题
引用次数
引用次数
年份
A novel 6T SRAM cell with asymmetrically gate underlap engineered FinFETs for enhanced read data stability and write ability
SM Salahuddin, H Jiao, V Kursun
International symposium on quality electronic design (ISQED), 353-358, 2013
592013
Eight-FinFET fully differential SRAM cell with enhanced read and write voltage margins
SM Salahuddin, M Chan
IEEE Transactions on Electron Devices 62 (6), 2014-2021, 2015
372015
SRAM with buried power distribution to improve write margin and performance in advanced technology nodes
SM Salahuddin, KA Shaik, A Gupta, B Chava, M Gupta, P Weckx, ...
IEEE electron device letters 40 (8), 1261-1264, 2019
322019
A frequency multiplier using three ambipolar graphene transistors
HMD Kabir, SM Salahuddin
Microelectronics journal 70, 12-15, 2017
232017
3D-optimized SRAM macro design and application to memory-on-logic 3D-IC at advanced nodes
R Chen, P Weckx, SM Salahuddin, SW Kim, G Sisto, G Van Der Plas, ...
2020 IEEE International Electron Devices Meeting (IEDM), 15.2. 1-15.2. 4, 2020
182020
Buried power SRAM DTCO and system-level benchmarking in N3
S Salahuddin, M Perumkunnil, ED Litta, A Gupta, P Weckx, J Ryckaert, ...
2020 IEEE Symposium on VLSI Technology, 1-2, 2020
172020
Buried power rail metal exploration towards the 1 nm node
A Gupta, D Radisic, JW Maes, OV Pedreira, JP Soulié, N Jourdan, ...
2021 IEEE International Electron Devices Meeting (IEDM), 22.5. 1-22.5. 4, 2021
132021
Buried Bitline for sub-5nm SRAM Design
R Mathur, M Bhargava, S Salahuddin, P Schuddinck, J Ryckaert, ...
2020 IEEE International Electron Devices Meeting (IEDM), 20.2. 1-20.2. 4, 2020
122020
Design and optimization of SRAM macro and logic using backside interconnects at 2nm node
R Chen, G Sisto, A Jourdain, G Hiblot, M Stucchi, N Kakarla, B Chehab, ...
2021 IEEE International Electron Devices Meeting (IEDM), 22.4. 1-22.4. 4, 2021
112021
From design to system-technology optimization for CMOS
J Ryckaert, B Chehab, D Jang, G Mirabelli, SM Salahuddin, P Schuddinck, ...
2021 International Symposium on VLSI Technology, Systems and Applications …, 2021
102021
System exploration and technology demonstration of 3D Wafer-to-Wafer integrated STT-MRAM based caches for advanced Mobile SoCs
M Perumkunnil, F Yasin, S Rao, SM Salahuddin, D Milojevic, ...
2020 IEEE International Electron Devices Meeting (IEDM), 15.4. 1-15.4. 4, 2020
82020
Low-leakage hybrid FinFET SRAM cell with asymmetrical gate overlap/underlap bitline access transistors for enhanced read data stability
SM Salahuddin, H Jiao, V Kursun
2013 IEEE International Symposium on Circuits and Systems (ISCAS), 2331-2334, 2013
82013
Buried interconnects for sub-5 nm SRAM design
R Mathur, M Bhargava, B Cline, S Salahuddin, A Gupta, P Schuddinck, ...
IEEE Transactions on Electron Devices 69 (3), 1041-1047, 2022
72022
Finfet sram cells with asymmetrical bitline access transistors for enhanced read stability
SM Salahuddin, V Kursun, H Jiao
Transactions on Electrical and Electronic Materials 16 (6), 293-302, 2015
72015
Extended methodology to determine SRAM write margin in resistance-dominated technology node
HH Liu, SM Salahuddin, D Abdi, R Chen, P Weckx, P Matagne, F Catthoor
IEEE Transactions on Electron Devices 69 (6), 3113-3117, 2022
62022
CFET SRAM DTCO, interconnect guideline, and benchmark for CMOS scaling
HH Liu, SM Salahuddin, BT Chan, P Schuddinck, Y Xiang, G Hellings, ...
IEEE Transactions on Electron Devices 70 (3), 883-890, 2023
52023
Improvement in data transmission efficiency in communication systems using scattering compensation techniques
S Raju, SM Salahuddin, MI Raza
Progress In Electromagnetics Research C 12, 237-251, 2010
52010
DSSS IR UWB transceiver for intra/ inter chip wireless interconnect in future ULSI using reconfigurable monocycle pulse
S Raju, SM Salahuddin, MS Islam, PK Saha, AHMZ Alam
2008 International Conference on Computer and Communication Engineering, 2008
52008
Design-technology co-optimization overview of CFET architecture
G Mirabelli, P Schuddinck, HH Liu, S Yang, O Zografos, SM Salahuddin, ...
DTCO and Computational Patterning II 12495, 116-122, 2023
42023
DTCO of sequential and monolithic CFET SRAM
HH Liu, SM Salahuddin, BT Chan, P Schuddinck, Y Xiang, P Weckx, ...
DTCO and Computational Patterning II 12495, 218-224, 2023
42023
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