| Josephson junction field-effect transistors for Boolean logic cryogenic applications F Wen, J Shabani, E Tutuc IEEE Transactions on Electron Devices 66 (12), 5367-5374, 2019 | 33 | 2019 |
| Coherently Strained Si–SixGe1–x Core–Shell Nanowire Heterostructures DC Dillen, F Wen, K Kim, E Tutuc Nano Letters 16 (1), 392-398, 2016 | 30 | 2016 |
| Enhanced Electron Mobility in Nonplanar Tensile Strained Si Epitaxially Grown on SixGe1–x Nanowires F Wen, E Tutuc Nano letters 18 (1), 94-100, 2018 | 20 | 2018 |
| Mean free path suppression of low-frequency phonons in SiGe nanowires B Smith, G Fleming, KD Parrish, F Wen, E Fleming, K Jarvis, E Tutuc, ... Nano Letters 20 (11), 8384-8391, 2020 | 19 | 2020 |
| Epitaxial Al-InAs heterostructures as platform for Josephson junction field-effect transistor logic devices F Wen, J Yuan, KS Wickramasinghe, W Mayer, J Shabani, E Tutuc IEEE Transactions on Electron Devices 68 (4), 1524-1529, 2021 | 18 | 2021 |
| Laser spike annealing for shallow junctions in Ge CMOS W Hsu, F Wen, X Wang, Y Wang, A Dolocan, A Roy, T Kim, E Tutuc, ... IEEE Transactions on Electron Devices 64 (2), 346-352, 2016 | 18 | 2016 |
| High phosphorus dopant activation in germanium using laser spike annealing W Hsu, X Wang, F Wen, Y Wang, A Dolocan, T Kim, E Tutuc, SK Banerjee IEEE Electron Device Letters 37 (9), 1088-1091, 2016 | 12 | 2016 |
| High noise margin, digital logic design using josephson junction field-effect transistors for cryogenic computing SRS Raman, F Wen, R Pillarisetty, V De, JP Kulkarni IEEE Transactions on Applied Superconductivity 31 (5), 1-5, 2021 | 11 | 2021 |
| Strained SixGe1− x-Ge-Si core-double-shell nanowire heterostructures for simultaneous hole and electron mobility enhancement F Wen, E Tutuc Applied Physics Letters 113 (11), 2018 | 7 | 2018 |
| Shell morphology and Raman spectra of epitaxial Ge− SixGe1− x and Si− SixGe1− x core-shell nanowires F Wen, DC Dillen, K Kim, E Tutuc Journal of Applied Physics 121 (23), 2017 | 6 | 2017 |
| Strain engineered Si-Ge nanowire heterostructures and Josephson junction field-effect transistors for logic device applications F Wen The University of Texas at Austin, 2020 | 1 | 2020 |
| Shell morphology and Raman spectra of epitaxial Ge-Si x̳ Ge₁₋ x̳ and Si-Si x̳ Ge₁₋ x̳ core-shell nanowires F Wen | | 2018 |
Emanuel TutucProfessor, The University of Texas at Austin在 mer.utexas.edu 的电子邮件经过验证
