| Sensitivity of 2DEG-based Hall-effect sensors at high temperatures HS Alpert, CA Chapin, KM Dowling, SR Benbrook, H Köck, ... Review of Scientific Instruments 91 (2), 2020 | 36 | 2020 |
| Effect of geometry on sensitivity and offset of AlGaN/GaN and InAlN/GaN Hall-effect sensors HS Alpert, KM Dowling, CA Chapin, AS Yalamarthy, SR Benbrook, ... IEEE Sensors Journal 19 (10), 3640-3646, 2019 | 32 | 2019 |
| Ultra-high-Q gallium nitride SAW resonators for applications with extreme temperature swings A Qamar, SR Eisner, DG Senesky, M Rais-Zadeh Journal of Microelectromechanical Systems 29 (5), 900-905, 2020 | 19 | 2020 |
| Low offset and noise in high biased GaN 2DEG Hall-effect plates investigated with infrared microscopy KM Dowling, T Liu, HS Alpert, CA Chapin, SR Eisner, AS Yalamarthy, ... Journal of Microelectromechanical Systems 29 (5), 669-676, 2020 | 14 | 2020 |
| Enhancement-mode GaN transistor technology for harsh environment operation M Yuan, J Niroula, Q Xie, NS Rajput, K Fu, S Luo, SK Das, AJB Iqbal, ... IEEE Electron Device Letters 44 (7), 1068-1071, 2023 | 12 | 2023 |
| Extended exposure of gallium nitride heterostructure devices to a simulated Venus environment SR Eisner, HS Alpert, CA Chapin, AS Yalamarthy, PF Satterthwaite, ... 2021 IEEE Aerospace Conference (50100), 1-12, 2021 | 12 | 2021 |
| A laterally vibrating lithium niobate MEMS resonator array operating at 500° C in air SR Eisner, CA Chapin, R Lu, Y Yang, S Gong, DG Senesky Sensors 21 (1), 149, 2020 | 11 | 2020 |
| Hall-effect sensor technique for no induced voltage in AC magnetic field measurements without current spinning AV Lalwani, AS Yalamarthy, HS Alpert, M Holliday, SR Eisner, CA Chapin, ... IEEE Sensors Journal 22 (2), 1245-1251, 2021 | 6 | 2021 |
| Thermal stability study of gallium nitride based magnetic field sensor S Shetty, A Kuchuk, M Zamani-Alavijeh, A Hassan, SR Eisner, ... Journal of Applied Physics 134 (14), 2023 | 5 | 2023 |
| Temperature and field dependencies of current leakage mechanisms in IrOx contacts on InAlN/GaN heterostructures SR Eisner, DG Senesky Applied Physics Letters 123 (15), 2023 | 2 | 2023 |
| Thermal modeling of Q-spoil switching elements for MRI coils RH Caverly, S Benbrook 2017 First IEEE MTT-S International Microwave Bio Conference (IMBIOC), 1-3, 2017 | 2 | 2017 |
| Device and material investigations of GaN enhancement-mode transistors for Venus and harsh environments Q Xie, J Niroula, NS Rajput, M Yuan, S Luo, K Fu, MF Isamotu, RH Palash, ... Applied Physics Letters 124 (17), 2024 | 1 | 2024 |
| Temperature, Sensitivity, and Frequency Response of AlN/GaN Heterostructure Micro-Hall Effect Sensor S Shetty, SR Eisner, A Hassan, A Lalwani, D Baral, YI Mazur, DG Senesky, ... IEEE Transactions on Electron Devices, 2024 | 1 | 2024 |
| Control Device Thermal Modeling in MRI Receive Coil Q-Spoiling Circuits RH Caverly, S Benbrook IEEE Journal of Electromagnetics, RF and Microwaves in Medicine and Biology …, 2017 | 1 | 2017 |
| Effect of temperature on the stability and performance of III-nitride HEMT magnetic field sensors S Shetty, AV Kuchuk, M Zamani-Alavijeh, FM Oliveira, A Hassan, ... Applied Physics Letters 125 (4), 2024 | | 2024 |
| InAlN/GaN High Electron Mobility Transistors for Venus Surface Exploration SR Eisner Stanford University, 2022 | | 2022 |
| Graphene as a Diffusion Barrier in High-Temperature Electronics L Brandt, AS Yalamarthy, P Satterthwaite, S Vaziri, S Benbrook, E Pop, ... APS March Meeting Abstracts 2019, E17. 004, 2019 | | 2019 |
