| Sampling depth of total electron and fluorescence measurements in Si L-and K-edge absorption spectroscopy M Kasrai, WN Lennard, RW Brunner, GM Bancroft, JA Bardwell, KH Tan Applied Surface Science 99 (4), 303-312, 1996 | 344 | 1996 |
| Film thickness measurements of SiO2 by XPS DF Mitchell, KB Clark, JA Bardwell, WN Lennard, GR Massoumi, ... Surface and Interface Analysis 21 (1), 44-50, 1994 | 204 | 1994 |
| Semi-insulating C-doped GaN and high-mobility AlGaN/GaN heterostructures grown by ammonia molecular beam epitaxy JB Webb, H Tang, S Rolfe, JA Bardwell Applied physics letters 75 (7), 953-955, 1999 | 202 | 1999 |
| Properties of carbon-doped GaN H Tang, JB Webb, JA Bardwell, S Raymond, J Salzman, C Uzan-Saguy Applied Physics Letters 78 (6), 757-759, 2001 | 184 | 2001 |
| Ultraviolet photoenhanced wet etching of GaN in solution JA Bardwell, JB Webb, H Tang, J Fraser, S Moisa Journal of Applied Physics 89 (7), 4142-4149, 2001 | 159 | 2001 |
| In situ characterization of anodic silicon oxide films by AC impedance measurements P Schmuki, H Böhni, JA Bardwell Journal of the Electrochemical Society 142 (5), 1705, 1995 | 136 | 1995 |
| Use of 18O/SIMS and electrochemical techniques to study the reduction and breakdown of passive oxide films on iron JA Bardwell, B MacDougall, MJ Graham Journal of the Electrochemical Society 135 (2), 413, 1988 | 89 | 1988 |
| In situ XANES detection of Cr (VI) in the passive film on Fe‐26Cr JA Bardwell, GI Sproule, B MacDougall, MJ Graham, AJ Davenport, ... Journal of the Electrochemical Society 139 (2), 371, 1992 | 80 | 1992 |
| Self-heating and the temperature dependence of the dc characteristics of GaN heterostructure field effect transistors SP McAlister, JA Bardwell, S Haffouz, H Tang Journal of Vacuum Science & Technology A 24 (3), 624-628, 2006 | 75 | 2006 |
| In situ XANES study of galvanostatic reduction of the passive film on iron AJ Davenport, JA Bardwell, CM Vitus Journal of the Electrochemical Society 142 (3), 721, 1995 | 73 | 1995 |
| AC impedance spectroscopy of the anodic film on zirconium in neutral solution JA Bardwell, MCH McKubre Electrochimica acta 36 (3-4), 647-653, 1991 | 70 | 1991 |
| AlGaN/GaN metal–oxide–semiconductor high-electron mobility transistors using oxide insulator grown by photoelectrochemical oxidation method LH Huang, SH Yeh, CT Lee, H Tang, J Bardwell, JB Webb IEEE electron device letters 29 (4), 284-286, 2008 | 69 | 2008 |
| A simple wet etch for GaN JA Bardwell, IG Foulds, JB Webb, H Tang, J Fraser, S Moisa, SJ Rolfe Journal of electronic materials 28, L24-L26, 1999 | 69 | 1999 |
| Thin anodic oxides formed on GaAs in aqueous solutions P Schmuki, GI Sproule, JA Bardwell, ZH Lu, MJ Graham Journal of applied physics 79 (9), 7303-7311, 1996 | 69 | 1996 |
| Extensions of the Kramers–Kronig transformation that cover a wide range of practical spectroscopic applications JA Bardwell, MJ Dignam The Journal of chemical physics 83 (11), 5468-5478, 1985 | 69 | 1985 |
| Nature of the passive film on Fe-Cr alloys as studied by 18O secondary ion mass spectrometry: reduction of the prior film and stability to ex situ surface analysis JA Bardwell, GI Sproule, DF Mitchell, B MacDougall, MJ Graham Journal of the chemical society. Faraday transactions 87 (7), 1011-1019, 1991 | 66 | 1991 |
| Pitting of iron by chloride in borate buffer solution: role of the anodic oxide film JA Bardwell, B MacDougall Journal of the Electrochemical Society 135 (9), 2157, 1988 | 56 | 1988 |
| Surface cleaning and preparation in AlGaN/GaN-based HEMT processing as assessed by X-ray photoelectron spectroscopy F González-Posada, JA Bardwell, S Moisa, S Haffouz, H Tang, AF Brana, ... Applied surface science 253 (14), 6185-6190, 2007 | 54 | 2007 |
| AlGaN/GaN field effect transistors with C-doped GaN buffer layer as an electrical isolation template grown by molecular beam epitaxy S Haffouz, H Tang, JA Bardwell, EM Hsu, JB Webb, S Rolfe Solid-state electronics 49 (5), 802-807, 2005 | 54 | 2005 |
| Growth and characterization of anodic oxides on Si (100) formed in 0.1 M hydrochloric acid JA Bardwell, N Draper, P Schmuki Journal of applied physics 79 (11), 8761-8769, 1996 | 54 | 1996 |
