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Electrical and optical properties of NiO films deposited by magnetron sputtering. M Guziewicz, J Grochowski, M Borysiewicz, E Kaminska, JZ Domagala, ... Optica Applicata 41 (2), 2011 | 123 | 2011 |
Theory of doping properties of Ag acceptors in ZnO O Volnianska, P Boguslawski, J Kaczkowski, P Jakubas, A Jezierski, ... Physical Review B—Condensed Matter and Materials Physics 80 (24), 245212, 2009 | 96 | 2009 |
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Third-order nonlinear optical properties of thin sputtered gold films E Xenogiannopoulou, P Aloukos, S Couris, E Kaminska, A Piotrowska, ... Optics communications 275 (1), 217-222, 2007 | 72 | 2007 |
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Ni‐Based Ohmic Contacts to n‐Type 4H‐SiC: The Formation Mechanism and Thermal Stability AV Kuchuk, P Borowicz, M Wzorek, M Borysiewicz, R Ratajczak, ... Advances in Condensed Matter Physics 2016 (1), 9273702, 2016 | 65 | 2016 |
Temperature dependence of electrical properties of gallium-nitride bulk single crystals doped with Mg and their evolution with annealing E Litwin-Staszewska, T Suski, R Piotrzkowski, I Grzegory, M Bockowski, ... Journal of Applied Physics 89 (12), 7960-7965, 2001 | 65 | 2001 |
Planar optical waveguides based on thin ZnO layers P Struk, T Pustelny, K Gut, K Gołaszewska, E Kamińska, M Ekielski, ... Acta Physica Polonica A 116 (3), 414-418, 2009 | 47 | 2009 |
Surface properties of nanostructured, porous ZnO thin films prepared by direct current reactive magnetron sputtering M Kwoka, B Lyson-Sypien, A Kulis, M Maslyk, MA Borysiewicz, ... Materials 11 (1), 131, 2018 | 44 | 2018 |
Optical characterizations of ZnO, SnO2, and TiO2 thin films for butane detection T Mazingue, L Escoubas, L Spalluto, F Flory, P Jacquouton, A Perrone, ... Applied Optics 45 (7), 1425-1435, 2006 | 37 | 2006 |
Magneto-optical properties of the diluted magnetic semiconductor p-type ZnMnO E Przeździecka, E Kamińska, M Kiecana, M Sawicki, W Pacuski, J Kossut Solid state communications 139 (10), 541-544, 2006 | 36 | 2006 |
p‐type conducting ZnO: fabrication and characterisation E Kaminska, A Piotrowska, J Kossut, R Butkutė, W Dobrowolski, ... physica status solidi (c) 2 (3), 1119-1124, 2005 | 36 | 2005 |
Influence of surface cleaning effects on properties of Schottky diodes on 4H–SiC N Kwietniewski, M Sochacki, J Szmidt, M Guziewicz, E Kaminska, ... Applied surface science 254 (24), 8106-8110, 2008 | 32 | 2008 |
Electron transport and terahertz radiation detection in submicrometer-sized GaAs/AlGaAs field-effect transistors with two-dimensional electron gas AV Antonov, VI Gavrilenko, EV Demidov, SV Morozov, AA Dubinov, ... Physics of the Solid State 46, 146-149, 2004 | 31 | 2004 |
Ohmic contact to n-GaN with TiN diffusion barrier E Kamińska, A Piotrowska, M Guziewicz, S Kasjaniuk, A Barcz, ... MRS Online Proceedings Library 449, 1055-1060, 1996 | 29 | 1996 |
Hydrogen sensing properties of thin NiO films deposited by RF sputtering M Guziewicz, P Klata, J Grochowski, K Golaszewska, E Kaminska, ... Procedia Engineering 47, 746-749, 2012 | 26 | 2012 |
Quantum ballistic transport in constrictions of n-PbTe G Grabecki, J Wróbel, T Dietl, K Byczuk, E Papis, E Kamińska, ... Physical Review B 60 (8), R5133, 1999 | 26 | 1999 |
Ag and N acceptors in ZnO: An ab initio study of acceptor pairing, doping efficiency, and the role of hydrogen O Volnianska, P Boguslawski, E Kaminska Physical Review B—Condensed Matter and Materials Physics 85 (16), 165212, 2012 | 23 | 2012 |
Ti-Al-N MAX phase a candidate for ohmic contacts to n-GaN M Borysiewicz, E Kamińska, A Piotrowska, I Pasternak, R Jakieła, ... Acta Physica Polonica A 114 (5), 1061-1066, 2008 | 21 | 2008 |