| Composition analysis of SiO2/SiC interfaces by electron spectroscopic measurements using slope-shaped oxide films Y Hijikata, H Yaguchi, M Yoshikawa, S Yoshida Applied Surface Science 184 (1-4), 161-166, 2001 | 146 | 2001 |
| A kinetic model of silicon carbide oxidation based on the interfacial silicon and carbon emission phenomenon Y Hijikata, H Yaguchi, S Yoshida Applied Physics Express 2 (2), 021203, 2009 | 131 | 2009 |
| Three-dimensional proton beam writing of optically active coherent vacancy spins in silicon carbide H Kraus, D Simin, C Kasper, Y Suda, S Kawabata, W Kada, T Honda, ... Nano letters 17 (5), 2865-2870, 2017 | 105 | 2017 |
| Physics and technology of silicon carbide devices Y Hijikata BoD–Books on Demand, 2012 | 85 | 2012 |
| Oxide growth rate enhancement of silicon carbide (0001) Si-faces in thin oxide regime T Yamamoto, Y Hijikata, H Yaguchi, S Yoshida Japanese journal of applied physics 47 (10R), 7803, 2008 | 61 | 2008 |
| Differences in SiC thermal oxidation process between crystalline surface orientations observed by in-situ spectroscopic ellipsometry D Goto, Y Hijikata, S Yagi, H Yaguchi Journal of Applied Physics 117 (9), 2015 | 52 | 2015 |
| Growth rate enhancement of (0001)-face silicon–carbide oxidation in thin oxide regime T Yamamoto, Y Hijikata, H Yaguchi, S Yoshida Japanese Journal of Applied Physics 46 (8L), L770, 2007 | 47 | 2007 |
| Unified theory of silicon carbide oxidation based on the Si and C emission model D Goto, Y Hijikata Journal of Physics D: Applied Physics 49 (22), 225103, 2016 | 46 | 2016 |
| Characterization of carrier concentration and mobility in n-type SiC wafers using infrared reflectance spectroscopy K Narita, Y Hijikata, H Yaguchi, S Yoshida, S Nakashima Japanese journal of applied physics 43 (8R), 5151, 2004 | 44 | 2004 |
| Impacts of gate bias and its variation on gamma‐ray irradiation resistance of SiC MOSFETs K Murata, S Mitomo, T Matsuda, T Yokoseki, T Makino, S Onoda, ... physica status solidi (a) 214 (4), 1600446, 2017 | 43 | 2017 |
| Oxygen partial pressure dependence of the SiC oxidation process studied by in-situ spectroscopic ellipsometry K Kouda, Y Hijikata, S Yagi, H Yaguchi, S Yoshida Journal of Applied Physics 112 (2), 2012 | 37 | 2012 |
| Pressure Sensitivity of a Fiber-Optic Microprobe for High-Frequency Ultrasonic Field KN Y Uno Japanese Journal of Applied Physics 38 (5B), 3120-3123, 1999 | 37 | 1999 |
| Photoluminescence study on temperature dependence of band gap energy of GaAsN alloys H Yaguchi, S Kikuchi, Y Hijikata, S Yoshida, D Aoki, K Onabe physica status solidi (b) 228 (1), 273-277, 2001 | 35 | 2001 |
| Formation of nitrogen-vacancy centers in 4H-SiC and their near infrared photoluminescence properties S Sato, T Narahara, Y Abe, Y Hijikata, T Umeda, T Ohshima Journal of Applied Physics 126 (8), 2019 | 34 | 2019 |
| RF‐MBE growth of cubic InN films on MgO (001) substrates Y Iwahashi, H Yaguchi, A Nishimoto, M Orihara, Y Hijikata, S Yoshida physica status solidi c 3 (6), 1515-1518, 2006 | 32 | 2006 |
| Room temperature electrical control of single photon sources at 4H-SiC surface S Sato, T Honda, T Makino, Y Hijikata, SY Lee, T Ohshima ACS Photonics 5 (8), 3159-3165, 2018 | 31 | 2018 |
| MOS capacitors obtained by wet oxidation of n-type 4H–SiC pre-implanted with nitrogen A Poggi, F Moscatelli, Y Hijikata, S Solmi, R Nipoti Microelectronic Engineering 84 (12), 2804-2809, 2007 | 30 | 2007 |
| Radiation response of silicon carbide metal–oxide–semiconductor transistors in high dose region T Ohshima, T Yokoseki, K Murata, T Matsuda, S Mitomo, H Abe, T Makino, ... Japanese Journal of Applied Physics 55 (1S), 01AD01, 2015 | 28 | 2015 |
| Effect of Ar post-oxidation annealing on oxide–4H-SiC interfaces studied by capacitance to voltage measurements and photoemission spectroscopy Y Hijikata, H Yaguchi, S Yoshida, Y Ishida, M Yoshikawa Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 23 (2 …, 2005 | 27 | 2005 |
| Influence of neutron radiation on majority and minority carrier traps in n-type 4H-SiC I Capan, T Brodar, Y Yamazaki, Y Oki, T Ohshima, Y Chiba, Y Hijikata, ... Nuclear Instruments and Methods in Physics Research Section B: Beam …, 2020 | 26 | 2020 |
Takeshi OhshimaNational Institutes for Quantum Science and Technology在 qst.go.jp 的电子邮件经过验证
