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| Simultaneous Growth of Various InGaN/GaN Core‐Shell Microstructures for Color Tunable Device Applications Y Robin, Y Liao, M Pristovsek, H Amano physica status solidi (a) 215 (21), 1800361, 2018 | 20 | 2018 |
| Ohmic Contact to p-Type GaN Enabled by Post-Growth Diffusion of Magnesium J Wang, S Lu, W Cai, T Kumabe, Y Ando, Y Liao, Y Honda, YH Xie, ... IEEE Electron Device Letters 43 (1), 150-153, 2021 | 19 | 2021 |
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| Non-polar true-lateral GaN power diodes on foreign substrates J Wang, G Yu, H Zong, Y Liao, W Lu, W Cai, X Hu, YH Xie, H Amano Applied Physics Letters 118 (21), 2021 | 7 | 2021 |
| Improved device performance of vertical GaN-on-GaN nanorod Schottky barrier diodes with wet-etching process Y Liao, T Chen, J Wang, W Cai, Y Ando, X Yang, H Watanabe, A Tanaka, ... Applied Physics Letters 120 (12), 2022 | 6 | 2022 |
| High In content nitride sub-micrometer platelet arrays for long wavelength optical applications W Cai, Y Furusawa, J Wang, JH Park, Y Liao, HJ Cheong, S Nitta, ... Applied Physics Letters 121 (21), 2022 | 4 | 2022 |
| Vertical GaN-on-GaN nanowire Schottky barrier diodes by top-down fabrication approach Y Liao, T Chen, J Wang, Y Ando, W Cai, X Yang, H Watanabe, J Hirotani, ... Japanese Journal of Applied Physics 60 (7), 070903, 2021 | 4 | 2021 |
| Dielectric ruduced surface field effect on vertical GaN-on-GaN nanowire Schottky barrier diodes Y Liao, T Chen, J Wang, Y Ando, X Yang, H Watanabe, J Hirotani, ... 2020 32nd International Symposium on Power Semiconductor Devices and ICs …, 2020 | 1 | 2020 |
| Vertical PN Junction-based GaN Power Diode J Wang12, S Jiang, H Zong, Y Liao, T Liu, J Shen, Y Ando, Y Honda, X Hu, ... | | |
