| Quantum simulation study of gate-all-around (GAA) silicon nanowire transistor and double gate metal oxide semiconductor field effect transistor (DG MOSFET) R Hosseini, M Fathipour, R Faez Int. J. Phys. Sci 7 (28), 5054-5061, 2012 | 21 | 2012 |
| Simulation Study of Circuit Performance of GAA Silicon Nanowire Transistor and DG MOSFET R Hosseini, N Teimuorzadeh Physical Review and Research International 3 (4), 568-576, 2013 | 14 | 2013 |
| A comparative study of NEGF and DDMS models in the GAA silicon nanowire transistor R Hosseini, M Fathipour, R Faez International Journal of Electronics 99 (9), 1299-1307, 2012 | 13 | 2012 |
| Performance study and analysis of heterojunction gate all around nanowire tunneling field effect transistor M Roohy, R Hosseini Journal of Optoelectronical Nanostructures 4 (2), 13-28, 2019 | 11 | 2019 |
| Analysis and Simulation of a Junctionless Double Gate MOSFET for High-speed Applications R Hosseini Journal of Korean Physical Society 67 (9), 1615-1618, 2015 | 10 | 2015 |
| A new source heterojunction strained channel structure for ballistic gate all around nanowire transistor R Hosseini, N Teimourzadeh, M Fathipour Journal of Computational Electronics 13, 170-179, 2014 | 6 | 2014 |
| Uncoupled mode space approach for analysis of nanoscale strained junctionless double-gate MOSFET R Hosseini journal of computational electronics, 2016 | 5 | 2016 |
| Tunable far infrared detection using quantum rings-inwell intersubband photodetectors R Samadzadeh, M Zavvari, R Hosseini Optical and Quantum Electronics 47 (11), 3555-3565, 2015 | 5 | 2015 |
| ELECTRICAL CHARACTERISTICS OF STRAINED DOUBLE GATE MOSFET H Valinajad, R Hosseini, ME Akbari International Journal of Research and Reviews in Applied Sciences 13 (2 …, 2012 | 5 | 2012 |
| A quantum mechanical transport approach to simulation of quadruple gate silicon nanowire transistor F Karimi, M Fathipour, R Hosseini Journal of Nanoscience and Nanotechnology 11 (12), 10476-10479, 2011 | 5 | 2011 |
| Introducing a high sensitive Hall effect sensor R Hosseini, A Kashaninia World Academy Science, Engineering and Technology 39, 431-434, 2008 | 4 | 2008 |
| Device and Circuit Performance Simulation of a New Nano-Scaled Side Contacted Field Effect Diode Structure O Talati Khoei, R Hosseini Journal of Optoelectronical Nanostructures 4 (3), 17-32, 2019 | 3 | 2019 |
| Performance evaluation of source heterojunction strained channel gate all around nanowire transistor R Hosseini, M Fathipour, R Faez Modern Physics Letters B 26 (12), 1250076, 2012 | 3 | 2012 |
| Window layer based on ZnO and Ag thin films incorporated in solar cells as a part of hybrid energy-saving system H Gholamzadeh, R Hosseini, H Veladi, H Rahimi Optica Applicata 53 (1), 2023 | 1 | 2023 |
| The impact of structural parameters on the electrical characteristics of GAA Silicon nanowire transistor M Fathipour, F Karimi, R Hosseini 2009 International Semiconductor Device Research Symposium, 1-2, 2009 | 1 | 2009 |
| Amplification of Output Voltage by Using Silicon Based Solar Cells, Piezoelectric and Thermoelectric Conversion Transducers: A Triple Energy Harvester HR Hadi Golamzadeh, Reza Hosseini, Hadi Veladi Journal of Optoelectronical Nano Structure 8 (2), 2023 | | 2023 |
| Design and Simulation of a 2GHz, 64×64 bit Arithmetic Logic Unit in 130nm CMOS Technology RHS Maryam Sistanizadeh Journal of Iranian Association of Electrical and Electronics Engineers 18 (1 …, 2021 | | 2021 |
| Design and Analysis of a Multi Material Double Gate Junctionless Tunnel Field Effect Transistor RH Negar Bashiri Journal of Iranian Association of Electrical and Electronics Engineers 18 (4 …, 2021 | | 2021 |
Morteza FathipourUniversity of Tehran在 ut.ac.ir 的电子邮件经过验证
Morteza FathipourUniversity of Tehran在 ut.ac.ir 的电子邮件经过验证
rahim faezsharif university of technology在 sharif.edu 的电子邮件经过验证