| A novel silicon-on-insulator lateral insulated-gate bipolar transistor with dual trenches for three-phase single chip inverter ICs W Sun, J Zhu, L Zhang, H Yu, Y Du, K Huang, S Lu, L Shi, Y Yi IEEE Electron Device Letters 36 (7), 693-695, 2015 | 41 | 2015 |
| Electrical characteristic study of an SOI-LIGBT with segmented trenches in the anode region J Zhu, L Zhang, W Sun, M Chen, F Zhou, M Zhao, L Shi, Y Gu, S Zhang IEEE Transactions on Electron Devices 63 (5), 2003-2008, 2016 | 40 | 2016 |
| Further study of the U-shaped channel SOI-LIGBT with enhanced current density for high-voltage monolithic ICs J Zhu, L Zhang, W Sun, Y Du, K Huang, M Chen, L Shi, Y Gu, S Zhang IEEE Transactions on Electron Devices 63 (3), 1161-1167, 2016 | 39 | 2016 |
| A high current density SOI-LIGBT with segmented trenches in the anode region for suppressing negative differential resistance regime L Zhang, J Zhu, W Sun, Y Du, H Yu, K Huang, L Shi 2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's …, 2015 | 39 | 2015 |
| High voltage thick SOI-LIGBT with high current density and latch-up immunity J Zhu, W Sun, L Zhang, Y Du, H Yu, K Huang, Y Gu, S Zhang, W Su 2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's …, 2015 | 31 | 2015 |
| A Normally-off Copackaged SiC-JFET/GaN-HEMT Cascode Device for High-Voltage and High-Frequency Applications G Lyu, Y Wang, J Wei, Z Zheng, J Sun, L Zhang, KJ Chen IEEE Transactions on Power Electronics 35 (9), 9669-9679, 2020 | 29 | 2020 |
| A review of superjunction vertical diffused MOSFET J Chen, W Sun, L Zhang, J Zhu, Y Lin IETE Technical review 29 (1), 44-52, 2012 | 26 | 2012 |
| Novel snapback-free reverse-conducting SOI-LIGBT with dual embedded diodes L Zhang, J Zhu, W Sun, M Chen, M Zhao, X Huang, J Chen, Y Qian, L Shi IEEE Transactions on Electron Devices 64 (3), 1187-1192, 2017 | 23 | 2017 |
| High-temperature characterization of a 1.2-kV SiC MOSFET using dynamic short-circuit measurement technique J Sun, S Yang, H Xu, L Zhang, X Wu, K Sheng, KJ Chen IEEE Journal of Emerging and Selected Topics in Power Electronics 8 (1), 215-222, 2019 | 22 | 2019 |
| A novel high-voltage interconnection structure with dual trenches for 500V SOI-LIGBT L Zhang, J Zhu, W Sun, M Chen, C Huang, F Zhou, Y Gu, S Zhang, W Su 2016 28th International Symposium on Power Semiconductor Devices and ICs …, 2016 | 19 | 2016 |
| A U-shaped channel SOI-LIGBT with dual trenches L Zhang, J Zhu, W Sun, M Zhao, J Chen, X Huang, D Ding, J Chen, L Shi IEEE Transactions on Electron Devices 64 (6), 2587-2591, 2017 | 17 | 2017 |
| Investigation on the degradation mechanism for SiC power MOSFETs under repetitive switching stress J Wei, S Liu, R Lou, L Tang, R Ye, L Zhang, X Zhang, W Sun, S Bai IEEE Journal of Emerging and Selected Topics in Power Electronics 9 (2 …, 2019 | 16 | 2019 |
| Low-loss SOI-LIGBT with triple deep-oxide trenches L Zhang, J Zhu, M Zhao, S Liu, W Sun, L Shi IEEE Transactions on Electron Devices 64 (9), 3756-3761, 2017 | 16 | 2017 |
| Low-loss SOI-LIGBT with dual deep-oxide trenches L Zhang, J Zhu, W Sun, M Zhao, J Chen, X Huang, L Shi, J Chen, D Ding IEEE Transactions on Electron Devices 64 (8), 3282-3286, 2017 | 16 | 2017 |
| 500-V silicon-on-insulator lateral IGBT with W-shaped n-typed buffer and composite p-typed collectors L Zhang, J Zhu, J Ma, S Cao, A Li, Y Zou, S Li, W Sun, J Zhao, L Shi, Y Gu, ... IEEE Transactions on Electron Devices 66 (3), 1430-1434, 2019 | 15 | 2019 |
| Electrical characteristic investigation on a novel double-well isolation structure in 600-V-class high-voltage integrated circuits W Sun, J Zhu, L Zhang, Q Qian, B Hou, S Lu IEEE transactions on electron devices 59 (12), 3477-3481, 2012 | 15 | 2012 |
| Simulation study of A 1200V 4H-SiC lateral MOSFET with reduced saturation current L Zhang, J Ma, Y Cui, W Cui, S Yuan, J Zhu, N He, S Zhang, W Sun IEEE Electron Device Letters 42 (7), 1037-1040, 2021 | 14 | 2021 |
| High‐temperature electrical performances and physics‐based analysis of p‐GaN HEMT device S Li, S Liu, Y Tian, C Zhang, J Wei, X Tao, N Li, L Zhang, W Sun IET Power Electronics 13 (3), 420-425, 2020 | 14 | 2020 |
| Investigations on electrical parameters degradations of p-GaN HEMTs under repetitive UIS stresses S Li, S Liu, C Zhang, N Li, X Tao, J Wei, L Zhang, W Sun IEEE Journal of Emerging and Selected Topics in Power Electronics 9 (2 …, 2020 | 14 | 2020 |
| Review on the Reliability Mechanisms of SiC Power MOSFETs: A Comparison Between Planar-Gate and Trench-Gate Structures J Wei, Z Wei, H Fu, J Cao, T Wu, J Sun, X Zhu, S Li, L Zhang, S Liu, W Sun IEEE Transactions on Power Electronics, 2023 | 13 | 2023 |
Weifeng SUNProfessor,Southeast University在 seu.edu.cn 的电子邮件经过验证
