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David Kohen
David Kohen
在 intel.com 的电子邮件经过验证
标题
引用次数
引用次数
年份
Methods for depositing a doped germanium tin semiconductor and related semiconductor device structures
D Kohen, HB Profijt
US Patent 10,236,177, 2019
3432019
Method of depositing a co-doped polysilicon film on a surface of a substrate within a reaction chamber
D Kohen, J Tolle
US Patent 10,510,536, 2019
3212019
Method for depositing a semiconductor structure on a surface of a substrate and related semiconductor structures
D Kohen, N Bhargava, J Tolle, V D'costa
US Patent 10,535,516, 2020
2992020
Methods for depositing a boron doped silicon germanium film
D Kohen
US Patent 11,031,242, 2021
2762021
Methods for selective deposition utilizing n-type dopants and/or alternative dopants to achieve high dopant incorporation
J Tolle, J Margetis, D Kohen
US Patent 11,557,474, 2023
2342023
Methods for forming a semiconductor structure and related semiconductor structures
D Kohen, HB Profijt, A Kretzschmar
US Patent App. 17/145,499, 2021
2192021
Methods of forming structures including silicon germanium and silicon layers, devices formed using the methods, and systems for performing the methods
A Kajbafvala, J Margetis, X Sun, D Kohen, D Pierreux
US Patent 11,996,289, 2024
1912024
Cu2ZnSn(S 1-x Se x)4 based solar cell produced by selenization of vacuum deposited precursors
L Grenet, S Bernardi, D Kohen, C Lepoittevin, S Noël, N Karst, A Brioude, ...
Solar Energy Materials and Solar Cells 101, 11-14, 2012
972012
Electrical properties of III-V/oxide interfaces
G Brammertz, HC Lin, K Martens, AR Alian, C Merckling, J Penaud, ...
ECS transactions 19 (5), 375, 2009
822009
Integration of GaAs, GaN, and Si-CMOS on a common 200 mm Si substrate through multilayer transfer process
KH Lee, S Bao, L Zhang, D Kohen, E Fitzgerald, CS Tan
Applied Physics Express 9 (8), 086501, 2016
542016
Selective epitaxial growth of high-P Si: P for dource/drain formation in advanced Si nFETs
E Rosseel, SK Dhayalan, A Hikavyy, R Loo, H Profijt, D Kohen, S Kubicek, ...
ECS Transactions 75 (8), 347-359, 2016
502016
Fundamentals of Ge1− xSnx and SiyGe1− x-ySnx RPCVD epitaxy
J Margetis, A Mosleh, SA Ghetmiri, S Al-Kabi, W Dou, W Du, N Bhargava, ...
Materials Science in Semiconductor Processing 70, 38-43, 2017
492017
Very low temperature epitaxy of group-IV semiconductors for use in FinFET, stacked nanowires and monolithic 3D integration
C Porret, A Hikavyy, JFG Granados, S Baudot, A Vohra, B Kunert, ...
ECS Journal of Solid State Science and Technology 8 (8), P392, 2019
352019
The role of AsH3 partial pressure on anti-phase boundary in GaAs-on-Ge grown by MOCVD–Application to a 200mm GaAs virtual substrate
D Kohen, S Bao, KH Lee, KEK Lee, CS Tan, SF Yoon, EA Fitzgerald
Journal of Crystal Growth 421, 58-65, 2015
352015
Aluminum catalyzed growth of silicon nanowires: Al atom location and the influence of silicon precursor pressure on the morphology
D Kohen, C Cayron, E De Vito, V Tileli, P Faucherand, C Morin, A Brioude, ...
Journal of crystal growth 341 (1), 12-18, 2012
342012
Cu2ZnSn (S1− xSex) 4 thin films for photovoltaic applications: Influence of the precursor stacking order on the selenization process
G Altamura, L Grenet, C Bougerol, E Robin, D Kohen, H Fournier, ...
Journal of alloys and compounds 588, 310-315, 2014
272014
Epitaxial GeSn: Impact of process conditions on material quality
R Loo, Y Shimura, S Ike, A Vohra, T Stoica, D Stange, D Buca, D Kohen, ...
Semiconductor science and technology 33 (11), 114010, 2018
262018
Preventing phase separation in MOCVD-grown InAlAs compositionally graded buffer on silicon substrate using InGaAs interlayers
D Kohen, XS Nguyen, RI Made, C Heidelberger, KH Lee, KEK Lee, ...
Journal of Crystal Growth 478, 64-70, 2017
232017
Molecular beam epitaxy passivation studies of Ge and III–V semiconductors for advanced CMOS
C Merckling, J Penaud, D Kohen, F Bellenger, A Alian, G Brammertz, ...
Microelectronic engineering 86 (7-9), 1592-1595, 2009
222009
SiGe and III-V materials and devices: New HEMT and LED elements in 0.18-micron CMOS process and design
EA Fitzgerald, KE Lee, SF Yoon, SJ Chua, CS Tan, GI Ng, X Zhou, ...
ECS Transactions 75 (8), 439, 2016
202016
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