| Ultra-low-threshold continuous-wave and pulsed lasing in tensile-strained GeSn alloys A Elbaz, D Buca, N von den Driesch, K Pantzas, G Patriarche, ... Nature Photonics 14 (6), 375-382, 2020 | 208 | 2020 |
| Sharpening the interfaces of axial heterostructures in self-catalyzed AlGaAs nanowires: experiment and theory G Priante, F Glas, G Patriarche, K Pantzas, F Oehler, JC Harmand Nano letters 16 (3), 1917-1924, 2016 | 91 | 2016 |
| 10 Gbit s−1 Free Space Data Transmission at 9 µm Wavelength With Unipolar Quantum Optoelectronics H Dely, T Bonazzi, O Spitz, E Rodriguez, D Gacemi, Y Todorov, K Pantzas, ... Laser & Photonics Reviews 16 (2), 2100414, 2022 | 72 | 2022 |
| Semibulk InGaN: A novel approach for thick, single phase, epitaxial InGaN layers grown by MOVPE K Pantzas, Y El Gmili, J Dickerson, S Gautier, L Largeau, O Mauguin, ... Journal of crystal growth 370, 57-62, 2013 | 67 | 2013 |
| Distributed Bragg reflectors based on diluted boron-based BAlN alloys for deep ultraviolet optoelectronic applications M Abid, T Moudakir, G Orsal, S Gautier, A En Naciri, Z Djebbour, JH Ryou, ... Applied Physics Letters 100 (5), 2012 | 66 | 2012 |
| Multilayered InGaN/GaN structure vs. single InGaN layer for solar cell applications: A comparative study Y El Gmili, G Orsal, K Pantzas, T Moudakir, S Sundaram, G Patriarche, ... Acta Materialia 61 (17), 6587-6596, 2013 | 62 | 2013 |
| Reduced lasing thresholds in GeSn microdisk cavities with defect management of the optically active region A Elbaz, R Arefin, E Sakat, B Wang, E Herth, G Patriarche, A Foti, ... ACS photonics 7 (10), 2713-2722, 2020 | 56 | 2020 |
| Deep structural analysis of novel BGaN material layers grown by MOVPE S Gautier, G Patriarche, T Moudakir, M Abid, G Orsal, K Pantzas, ... Journal of crystal growth 315 (1), 288-291, 2011 | 43 | 2011 |
| Nondestructive three-dimensional imaging of crystal strain and rotations in an extended bonded semiconductor heterostructure AI Pateras, M Allain, P Godard, L Largeau, G Patriarche, A Talneau, ... Physical Review B 92 (20), 205305, 2015 | 35 | 2015 |
| Nanometer-scale, quantitative composition mappings of InGaN layers from a combination of scanning transmission electron microscopy and energy dispersive x-ray spectroscopy K Pantzas, G Patriarche, D Troadec, S Gautier, T Moudakir, S Suresh, ... Nanotechnology 23 (45), 455707, 2012 | 33 | 2012 |
| Harmonic generation with multi-layer dielectric metasurfaces G Marino, D Rocco, C Gigli, G Beaudoin, K Pantzas, S Suffit, P Filloux, ... Nanophotonics 10 (7), 1837-1843, 2021 | 32 | 2021 |
| Investigation of a relaxation mechanism specific to InGaN for improved MOVPE growth of nitride solar cell materials K Pantzas, G Patriarche, G Orsal, S Gautier, T Moudakir, M Abid, V Gorge, ... physica status solidi (a) 209 (1), 25-28, 2012 | 32 | 2012 |
| Ultra-low-noise microwave to optics conversion in gallium phosphide R Stockill, M Forsch, F Hijazi, G Beaudoin, K Pantzas, I Sagnes, R Braive, ... Nature Communications 13 (1), 6583, 2022 | 31 | 2022 |
| Characteristics of the surface microstructures in thick InGaN layers on GaN Y El Gmili, G Orsal, K Pantzas, A Ahaitouf, T Moudakir, S Gautier, ... Optical Materials Express 3 (8), 1111-1118, 2013 | 30 | 2013 |
| Theoretical analysis of the influence of defect parameters on photovoltaic performances of composition graded InGaN solar cells V Gorge, A Migan-Dubois, Z Djebbour, K Pantzas, S Gautier, T Moudakir, ... Materials Science and Engineering: B 178 (2), 142-148, 2013 | 29 | 2013 |
| Gallium phosphide as a piezoelectric platform for quantum optomechanics R Stockill, M Forsch, G Beaudoin, K Pantzas, I Sagnes, R Braive, ... Physical review letters 123 (16), 163602, 2019 | 28 | 2019 |
| Nanoscale selective area growth of thick, dense, uniform, In-rich, InGaN nanostructure arrays on GaN/sapphire template S Sundaram, R Puybaret, Y El Gmili, X Li, PL Bonanno, K Pantzas, ... Journal of Applied Physics 116 (16), 2014 | 26 | 2014 |
| Structural and compositional characterization of MOVPE GaN thin films transferred from sapphire to glass substrates using chemical lift-off and room temperature direct wafer … S Gautier, T Moudakir, G Patriarche, DJ Rogers, VE Sandana, ... Journal of crystal growth 370, 63-67, 2013 | 23 | 2013 |
| Polarization-and diffraction-controlled second-harmonic generation from semiconductor metasurfaces C Gigli, G Marino, S Suffit, G Patriarche, G Beaudoin, K Pantzas, I Sagnes, ... JOSA B 36 (7), E55-E64, 2019 | 22 | 2019 |
| Role of compositional fluctuations and their suppression on the strain and luminescence of InGaN alloys K Pantzas, G Patriarche, D Troadec, M Kociak, N Cherkashin, M Hÿtch, ... Journal of Applied Physics 117 (5), 2015 | 22 | 2015 |
Jean Paul SalvestriniGeorgia Tech Europe在 georgiatech-metz.fr 的电子邮件经过验证
